STD70N03L STD70N03L-1 N-channel 30V - 0.0059 - 70A - DPAK / IPAK STripFETTM III Power MOSFET General features Type VDSS RDS(on) ID STD70N03L 30V <0.0073 70A STD70N03L-1 30V <0.0073 70A Conduction losses reduced Switching losses reduced Low threshold device 2 1 1 DPAK IPAK c u d Description This product utilizes the latest advanced design rules of ST's proprietary STripFETTM technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. Applications 3 3 RDS(ON) * Qg industry's benchmark ) s ( ct Switching application e t le ) s t( o r P Internal schematic diagram o s b O - u d o r P e t e l Orderocodes s b O Part number Marking Package Packaging STD70N03L D70N03L DPAK Tape & reel STD70N03L-1 D70N03L-1 IPAK Tube June 2006 Rev 1 1/16 www.st.com 16 Contents STD70N03L - STD70N03L-1 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 8 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 c u d e t le ) s ( ct u d o r P e t e l o s b O 2/16 o s b O - o r P ) s t( STD70N03L - STD70N03L-1 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage Value Unit 30 V 20 V ID Drain current (continuous) at TC = 25C 70 A ID Drain current (continuous) at TC = 100C 50 A IDM (1) Drain current (pulsed) 280 A PTOT Total dissipation at TC = 25C 70 W Derating factor 0.47 W/C EAS (2) Single pulse avalanche energy 300 Tj Operating junction temperature Storage temperature -55 to 175 Tstg c u d 1. Pulse width limited by safe operating area 2. Starting Tj =25C, Id = 30A, Vdd = 15V Table 2. Thermal resistance Symbol o s b O - e t le Parameter ) s t( mJ C o r P Value Unit Rthj-case Thermal resistance junction-case Max 2.14 C/W Rthj-amb Thermal resistance junction-amb Max 100 C/W Maximum lead temperature for soldering purpose 275 C Tl o r P e c u d (t s) t e l o s b O 3/16 Electrical characteristics 2 STD70N03L - STD70N03L-1 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test condictions ID = 250A, VGS= 0 Zero gate voltage drain VDS = 20V, current (VGS = 0) VDS = 20V,Tc = 125C IGSS Gate body leakage current(VDS = 0) Table 4. Symbol gfs (1) Ciss Coss Crss Qg Dynamic Parameter VDS =10V, ID = 15A Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1MHz, VGS=0 ) s ( ct Min. VDD=15V, ID = 70A Typ. Max. Unit 40 S 2200 380 49 pF pF pF Qgd Qgls (2) Third-quadrant gate charge VDS <0V, VGS =10V 15 nC Gate input resistance f=1MHz Gate DC Bias =0 Test signal level =20mV open drain 1.5 t e l o RG (see Figure 7) 1. Pulsed: pulse duration = 300s, duty cycle 1.5% 2. ) s t( VGS =5V o r P e 4/16 du V o r P o s b O - Forward transconductance nA Total gate charge Gate-source charge Gate-drain charge Qgs s b O e t le Test condictions 100 c u d VGS= 10V, ID= 35A @Tj=125C VGS= 5V, ID= 35A @Tj=125C A A 0.0059 0.0073 0.007 0.013 0.0091 0.0113 0.0108 0.0201 VGS= 5V, ID= 35A Unit 1 10 1 VGS= 10V, ID= 35A RDS(on) Max. V VGS = 20V Gate threshold voltage VDS= VGS, ID = 250A Static drain-source on resistance Typ. 30 IDSS VGS(th) Min. Gate charge for synchronous operation: see Appendix A: Power losses estimation 15.7 8.3 3.4 21 nC nC nC STD70N03L - STD70N03L-1 Table 5. Switching times Symbol td(on) tr td(off) tf Table 6. Electrical characteristics Parameter Test condictions Turn-on delay time Rise time Turn-off delay time Fall time Min. Typ. Max. 21 95 19 15 VDD=15V, ID=35A, RG=4.7, VGS=5V (see Figure 13) Unit ns ns ns ns Source drain diode Symbol Max Unit Source-drain current 70 A ISDM(1) Source-drain current (pulsed) 280 A VSD (2) Forward on voltage 1.3 V ISD trr Qrr IRRM Parameter Test condictions Typ. ISD=35A, VGS=0 ISD = 70A, di/dt=100A/s, VDD=20V, Tj=150C Reverse recovery time Reverse recovery charge Reverse recovery current (see Figure 18) 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5% ) s ( ct Min e t le 32 51 3.2 o r P c u d ) s t( ns nC A o s b O - u d o r P e t e l o s b O 5/16 Electrical characteristics STD70N03L - STD70N03L-1 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics c u d e t le Figure 5. Transconductance o r P e t e l o s b O 6/16 du ) s ( ct ) s t( o r P o s b O Figure 6. Static drain-source on resistance STD70N03L - STD70N03L-1 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature c u d e t le ) s ( ct Figure 11. Source-drain diode forward characteristics ) s t( o r P o s b O - Figure 12. Normalized BVDSS vs temperature u d o r P e t e l o s b O 7/16 Test circuit 3 STD70N03L - STD70N03L-1 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit c u d ) s t( Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit e t le ) s ( ct u d o Figure 17. Unclamped inductive waveform r P e t e l o s b O 8/16 o r P o s b O - Figure 18. Switching time waveform STD70N03L - STD70N03L-1 Appendix A Power losses estimation Power losses estimation Figure 19. Buck converter c u d ) s t( o r P The power losses associated with the FETs in a synchronous buck converter can be estimated using the equations shown in the table below. The formulas give a good approximation, for the sake of performance comparison, of how different pairs of devices affect the converter efficiency. However a very important parameter, the wotking temperature, is not considered. The real device behavior is really dependent on how the heat generated inside the devices is removed to allow for a safer working junction temperature. e t le o s b O - The low side (SW2) device requires: Very low RDS(on) to reduce conduction losses Small Qgls to reduce the gate charge losses Small Coss to reduce losses due to output capacitance u d o r P e s b O t e l o ) s ( ct Small Qrr to reduce losses on SW1 during its turn-on The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source voltage to avoid the cross conduction phenomenon. The high side (SW1) device requires: Small Rg and Lg to allow higher gate current peak and to limit the voltage feedback on the gate Small Qg to have a faster commutation and to reduce gate charge losses Low RDS(on) to reduce the conduction losses 9/16 Power losses estimation STD70N03L - STD70N03L-1 High side switch (SW1) Low side switch (SW2) Pconduction R DS ( on ) * I L * R DS ( on ) * I L * ( 1 - ) Pswitching IL V in * ( Q gsth ( SW1 ) + Q gd ( SW1 ) ) * f * ---Ig Zero voltage switching 2 Recovery Not applicable Conduction Not applicable 2 c u d o r P 1 Vin * Q rr ( SW2 ) * f Pdiode o s b O - e t le V f ( SW2 ) * I L * t deadtime * f Pgate(Qg) Q g ( SW1 ) * V gg * f Q gls ( SW2 ) * V gg * f PQoss V in * Q oss ( SW1 ) * f -------------------------------------------------2 ) s ( ct V in * Q oss ( SW2 ) * f -------------------------------------------------2 r P e Parameter d t e l o Qgsth s b O Qgls u d o Meaning Duty-cycle Post threshold gate charge Third quadrant gate charge Pconduction On state losses Pswitching On-off transition losses Pdiode Conduction and reverse recovery diode losses Pgate Gate driver losses PQoss Output capacitance losses 10/16 ) s t( STD70N03L - STD70N03L-1 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 11/16 Package mechanical data STD70N03L - STD70N03L-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 C2 0.48 D 6 E 6.4 6.6 0.252 0.017 0.023 0.6 0.019 0.023 6.2 0.236 G 4.4 4.6 0.173 H 15.9 16.3 0.626 L 9 9.4 L1 0.8 1.2 0.8 12/16 0.039 A3 A1 B = G 1 = 2 = 3 = = B2 = 0.031 0.370 0.047 L D B3 C2 O E r P e d o r 0.641 C o s b O B6 A u d o L2 0.181 P e let 1 H ) s ( ct uc 0.354 0.031 ) s t( 0.244 0.260 B5 L2 bs MAX. A B3 t e l o TYP. L1 0068771-E STD70N03L - STD70N03L-1 Package mechanical data DPAK MECHANICAL DATA mm. inch DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 TYP 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 MAX. MIN. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 6.6 0.252 5.1 4.7 2.28 1 0.023 ) s t( 0.181 0.397 0.110 0.031 0.2 ) s ( ct 0.260 0.173 0.368 0.039 2.8 0.8 0 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.185 0.090 4.6 10.1 0.6 MAX. 0.200 6.4 4.4 9.35 1 TYP. o r P c u d 0.039 0.008 8 0 e t le 8 o s b O - u d o r P e s b O t e l o 0068772-F 13/16 Packaging mechanical data 5 STD70N03L - STD70N03L-1 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT c u d REEL MECHANICAL DATA DIM. mm MIN. A ro MAX. 330 P e let B 1.5 C 12.8 D 20.2 G 16.4 N 50 o s b O - T (s) TAPE MECHANICAL DATA DIM. 1.6 0.059 0.063 1.85 0.065 0.073 MAX. 6.8 7 B0 10.4 10.6 MIN. MAX. 0.267 0.275 od 0.409 0.417 0.476 F r P e 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 1.9 2.1 0.075 0.082 D1 1.5 1.5 t e l o 1.65 P2 E 14/16 12.1 t c u MIN. D bs inch A0 B1 O mm R 40 W 15.7 0.059 1.574 16.3 0.618 0.641 inch MIN. MAX. 12.992 0.059 13.2 0.504 0.520 18.4 0.645 0.724 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 ) s t( STD70N03L - STD70N03L-1 6 Revision history Revision history Table 7. Revision history Date Revision 29-Jun-2006 1 Changes First Release c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 15/16 STD70N03L - STD70N03L-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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