BAT42W, BAT43W
Vishay Semiconductors
for mer ly General Semiconductor
Document Number 88138 www.vishay.com
5-Feb-02 1
Schottky Diodes
.022 (0.55)
.112 (2.85)
.152 (3.85)
.067 (1.70)
.053 (1.35)
max.
.010 (0.25)
min.
Cathode Band
.006 (0.15)
max.
Top View
.140 (3.55)
.100 (2.55)
.055 (1.40)
.004 (0.1)
max.
Dimensions in inches
and (millimeters)
Mechanical Data
Case: SOD-123 Plastic Package
Weight: approx. 0.01g
Marking Codes: BAT42W = L2
BAT43W = L3
Packaging Codes/Options:
D3/10K per 13” reel (8mm tape), 30K/box
D4/3K per 7” reel (8mm tape), 30K/box
SOD-123
0.094 (2.40) 0.055 (1.40)
0.055 (1.40)
Features
• For general pur pose applications
• These diodes feature very low turn-on voltage and
fast switching.These devices are protected by a PN
junction guard ring against excessive voltage, such
as electrostatic discharges.
• These diodes are also available in the DO-35
case with the type designations BAT42 to BAT43
and in the MiniMELF case with the type
designations LL42 to LL43.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameters Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 30 V
Forward Continuous Current at Tamb = 25°CI
F200 mA
Repetitve Peak Forward Current IFRM 500 mA
at tp< 1s, δ< 0.5, Tamb = 25°C
Surge Forward Current at tp< 10 ms, Tamb = 25°CI
FSM 4(1) A
Power Dissipation(1) at Tamb = 65°CP
tot 200(1) mW
Thermal Resistance Junction to Ambient Air RΘJA 300(1) °C/W
Junction Temperature Tj125 °C
Ambient Operating Temperature Range Tamb –55 to +125 °C
Storage Temperature Range TS–55 to +150 °C
Note: (1) Valid provided that electrodes are kept at ambient temperature
Mounting Pad Layout
BAT42W, BAT43W
Vishay Semiconductors
for mer ly General Semiconductor
www.vishay.com Document Number 88138
25-Feb-02
Electrical Characteristics (TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Reverse Breakdown Voltage V(BR)R IR = 100µA (pulsed) 30 ——V
Leakage Current(1) IRVR = 25V ——0.5 µA
VR = 25V, Tj= 100°C——100
IF = 200mA ——1.0
BAT42W IF = 10mA ——0.4
F orward Voltage(1) BAT42W VFIF = 50mA ——0.65 V
BAT43W IF = 2mA 0.26 —0.33
BAT43W IF = 15mA ——0.45
Capacitance Ctot VR= 1V, f = 1MHz —7—pF
Reverse Recover y Time trr IF= 10mA to IR= 10mA —— 5ns
to IR= 1mA, RL= 100Ω
Detection Efficiency ηνRL= 15KΩ, CL= 300pF, 80 ——%
f = 45MHz, VRF = 2V
Note: (1) Pulse Test tp< 300µs, δ< 2%
Ratings and Characteristic Curves(TA= 25°C unless otherwise noted)
0.01
1
0.1
10
100
1000
200 600 800 1000 12004000
IF -- Forward Current (mA)
VF -- Instantaneous Forward Voltage (mV)
0
100
150
200
250
05025 75 100 125 150 175 200
TA -- Ambient Temperature (°C)
50
--40°C
IR -- Reverse Leakage Current (µA)
VR -- Reverse Voltage (V)
25°C
125°C
0.01
1
10
100
1000
01020304050
0.1
Fig. 2 – Typical Rever se Characteristics
Fig. 1 – Admissible Power Dissipation
vs. Ambient Temperature
Ptot -- Power Dissipation (mW)
25°C
50°C
75°C
100°C
125°C
002010 30 40 50 60
VR -- Reverse Voltage (V)
2
4
6
8
10
12
14
16
18
Fig. 4 – Typical Capacitance
vs. Reverse Applied Voltage
Capacitance (pF)
Fig. 3 – Typical Reverse
Characteristics
