TIP47 / TIP48 / TIP49 / TIP50 — NPN Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP47 / TIP48 / TIP49 / TIP50 Rev. 1.1.0
November 2014
TIP47 / TIP48 / TIP49 / TIP50
NPN Silicon Transistor
Features
• High-Voltage and Switching Applications
• High Sustaining Voltage: VCEO(sus ) = 250 V, 300 V, 350 V, 400 V
• 1 A Rated Collector Current
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP47 TIP47 TO-220 3L (Single Gauge) Bulk
TIP47TU TIP47 TO-220 3L (Single Gauge) Rail
TIP48 TIP48 TO-220 3L (Single Gauge) Bulk
TIP48TU TIP48 TO-220 3L (Single Gauge) Rail
TIP49 TIP49 TO-220 3L (Single Gauge) Bulk
TIP50 TIP50 TO-220 3L (Single Gauge) Bulk
TIP50TU TIP50 TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage
TIP47 350
V
TIP48 400
TIP49 450
TIP50 500
VCEO Collector-Emitter Voltage
TIP47 250
V
TIP48 300
TIP49 350
TIP50 400
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 1 A
ICP Collector Current (Pulse) 2 A
IB Base Current 0.6 A
TJ Junction Temperature 150 °C
TSTG Storage Temperature Range - 65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
TIP47 / TIP48 / TIP49 / TIP50 — NPN Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP47 / TIP48 / TIP49 / TIP50 Rev. 1.1.0 2
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Symbol Parameter Value Unit
PC Collector Dissipation (TC = 25°C) 40 W
Collector Dissipation (TA = 25°C) 2
Symbol Parameter Conditions Min. Typ. Max. Unit
VCEO(sus) Collector-Emitter Sustaining
Voltage(1)
TIP47
IC = 30 mA, IB = 0
250
V
TIP48 300
TIP49 350
TIP50 400
ICEO Collector Cut-Off Current
TIP47 VCE = 150 V, IB = 0 1
mA
TIP48 VCE = 200 V, IB = 0 1
TIP49 VCE = 250 V, IB = 0 1
TIP50 VCE = 300 V, IB = 0 1
ICES Collector Cut-Off Current
TIP47 VCE = 350 V, VEB = 0 1
mA
TIP48 VCE = 400 V, V EB = 0 1
TIP49 VCE = 450 V, V EB = 0 1
TIP50 VCE = 500 V, V EB = 0 1
IEBO Emitter Cut-Off Current VBE = 5 V, IC = 0 1 mA
hFE DC Current Gain(1) VCE = 10 V, IC = 0.3 A 30 150
VCE = 10 V, IC = 1 A 10
VCE(sat) Collector-Emitter Saturation Voltage(1) IC = 1 A, IB = 0.2 A 1 V
VBE(on) Base-Emitter On Voltage(1) VCE = 10 V, IC = 1 A 1.5 V
fT Current Gain Bandwidth Product VCE = 10 V, IC = 0.2 A,
f = 1 MHz 10 MHz
TIP47 / TIP48 / TIP49 / TIP50 — NPN Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP47 / TIP48 / TIP49 / TIP50 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage and
Base-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
0.01 0.1 1 4
1
10
100
1000
VCE = 10V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.01 0.1 1 4
0.01
0.1
1
10
IC = 5 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
TIP49
TIP48
TIP47
TIP50
D.C
1ms
500
μ
s
100
μ
s
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP47 / TIP48 / TIP49 / TIP50 — NPN Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP47 / TIP48 / TIP49 / TIP50 Rev. 1.1.0 4
Physical Dimensions
Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I72
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