NTVB Series Thyristor Surge Protectors High Voltage Bidirectional NTVB Series Thyristor Surge Protector Devices (TSPD) protect telecommunication circuits such as central office, access, and customer premises equipment from overvoltage conditions. These are bidirectional devices so they are able to have functionality of 2 devices in one package, saving valuable space on board layout. These devices will act as a crowbar when overvoltage occurs and will divert the energy away from circuit or device that is being protected. Use of the NTVB Series in equipment will help meet various regulatory requirements including: GR-1089-CORE, IEC 61000-4-5, ITU K.20/21/45, IEC 60950, TIA-968-A, FCC Part 68, EN 60950, UL 1950. http://onsemi.com BIDIRECTIONAL SURFACE MOUNT THYRISTOR 64 - 350 VOLTS MT1 MT2 ELECTRICAL PARAMETERS VDRM V(BO) VT IDRM I(BO) IT IH Device V V V mA mA A mA NTVB058NSx-L 58 77 4 5 800 2.2 150 NTVB065NSx-L 65 88 4 5 800 2.2 150 NTVB090NSx-L 90 130 4 5 800 2.2 150 NTVB170Sx-L 170 265 4 5 800 2.2 150 NTVB170NSx-L 170 220 4 5 800 2.2 150 NTVB180Sx-L 170 240 4 5 800 2.2 150 NTVB200Sx-L 200 320 4 5 800 2.2 150 NTVB220NSx-L 220 300 4 5 800 2.2 150 NTVB270Sx-L 270 365 4 5 800 2.2 150 NTVB275NSx-L 275 350 4 5 800 2.2 150 NTVB300Sx-L 300 400 4 5 800 2.2 150 SURGE DATA RATINGS Waveform * x = series ratings SMB JEDEC DO-214AA CASE 403C MARKING DIAGRAM AYWW XXXXG G XXXX = Specific Device Code Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Specification Voltage ms Current ms A B C Unit GR-1089-CORE 2x10 2x10 150 250 500 A(pk) TIA-968-A 10x160 10x160 90 150 200 GR-1089-CORE 10x360 10x360 75 125 175 TIA-968-A 10x560 10x560 50 100 150 ITU-T K.20/21 10x700 5x310 75 100 200 GR-1089-CORE 10x1000 10x1000 50 80 100 See detailed ordering and shipping information on page 4 of this data sheet. Recognized Components (c) Semiconductor Components Industries, LLC, 2010 October, 2010 - Rev. 0 1 Publication Order Number: NTVB058NS/D NTVB Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics (Notes 1, 2, 3) Breakover Voltage (Both Polarities) VDRM NTVB058NSx-L NTVB065NSx-L NTVB090NSx-L NTVB170Sx-L NTVB170NSx-L NTVB180Sx-L NTVB200Sx-L NTVB220NSx-L NTVB270Sx-L NTVB275NSx-L NTVB300Sx-L ( VD1 = 50 V ) Both Polarities ( VD2 = VDRM ) Both Polarities Min Typ V(BO) NTVB058NSx-L NTVB065NSx-L NTVB090NSx-L NTVB170Sx-L NTVB170NSx-L NTVB180Sx-L NTVB200Sx-L NTVB220NSx-L NTVB270Sx-L NTVB275NSx-L NTVB300Sx-L Off-State Voltage (Both Polarities) Off State Current Symbol Max 77 88 130 265 220 240 320 300 365 350 400 Unit V V 58 65 90 170 170 170 200 220 270 275 300 IDRM1 IDRM2 2.0 5.0 mA mA Holding Current (Both Polarities) (Note 3) VS = 500 V; IT = 2.2 A IH 150 250 - mA On-State Voltage IT = 1.0 A(pk) (PW = 300 mSec, DC = 2%) VT - - 4.0 V Maximum Non-Repetitive Rate of Change of On-State Current (Note 1) (Haefely test method, 1.0 pk < 100 A) di/dt - - 500 A/mSec Critical Rate of Rise of Off-State Voltage (Linear Waveform, VD = 0.8 VDRM, TJ = 25C) dv/dt 5.0 - - kV/mSec Symbol A B C Unit 84 79 58 39 39 37 36 33 31 28 28 129 123 95 150 59 59 56 52 47 44 44 222 198 154 195 99 97 110 81 76 97 71 CAPACITANCE Typ Characteristics (f=1.0 MHz, 1.0 Vrms, 2 Vdc bias) NTVB058NSx-L NTVB065NSx-L NTVB090NSx-L NTVB170Sx-L NTVB170NSx-L NTVB180Sx-L NTVB200Sx-L NTVB220NSx-L NTVB270Sx-L NTVB275NSx-L NTVB300Sx-L 1. Electrical parameters are based on pulsed test methods. 2. Measured under pulsed conditions to reduce heating 3. Allow cooling before testing second polarity. http://onsemi.com 2 Co pF NTVB Series SURGE RATINGS Symbol Characteristics Nominal Pulse Surge Short Circuit Current Non - Repetitive Double Exponential Decay Waveform (Notes 4, 5 and 6) 2 x 10 mSec 10 x 160 mSec 10 x 360 mSec 10 x 560 mSec 10 x 700 mSec 10 x 1000 mSec A B C Unit A(pk) IPPS1 IPPS3 IPPS4 IPPS5 IPPS6 IPPS7 150 90 75 50 75 50 250 150 125 100 100 80 500 200 150 150 200 100 4. Allow cooling before testing second polarity. 5. Measured under pulse conditions to reduce heating. 6. Nominal values may not represent the maximum capability of a device. THERMAL CHARACTERISTICS Symbol TSTG TJ R0JA Rating Value Unit Storage Temperature Range -65 to +150 C Operating Temperature Range -40 to +150 C 90 C/W Thermal Resistance: Junction-to-Ambient Per EIA/JESD51-3, PCB = FR4 3"x4.5"x0.06" Fan out in a 3x3 inch pattern, 2 oz copper track. Ipp - PEAK PULSE CURRENT - %Ipp +I Peak Value 100 I(BO) IH -Voltage Half Value 50 0 IT tr = rise time to peak value tf = decay time to half value +Voltage VT 0 tr VDRM V(BO) tf TIME (ms) -I Figure 2. Voltage Current Characteristics of TSPD Figure 1. Exponential Decay Pulse Waveform Symbol Parameter VDRM Peak Off State Voltage V(BO) Breakover Voltage I(BO) Breakover Current IH Holding Current VT On State Voltage IT On State Current http://onsemi.com 3 NTVB Series ORDERING INFORMATION Part Number Case Shipping SMB (Pb-Free) 2500 / Tape and Reel Marking NTVB058NSB-L 58NB NTVB058NSC-L 58NC NTVB065NSA-L 65NA NTVB065NSC-L 65NC NTVB090NSA-L 90NA NTVB170SA-L 170A NTVB170SC-L 170C NTVB170NSC-L 17NC NTVB180SA-L 180A NTVB200SA-L 200A NTVB200SB-L 200B NTVB200SC-L 200C NTVB220NSC-L 22NC NTVB270SA-L 270A NTVB270SB-L 270B NTVB270SC-L 270C NTVB275NSC-L 27NC NTVB300SA-L 300A NTVB300SB-L 300B NTVB300SC-L 300C For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NTVB Series PACKAGE DIMENSIONS SMB CASE 403C-01 ISSUE A S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. A D INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 B C K J P MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 H SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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