© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 11
1Publication Order Number:
TIP29B/D
TIP29, A, B, C (NPN),
TIP30, A, B, C (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications. Compact TO−220 AB package.
Features
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol
29
30
29A
30A
29B
30B
29C
30C Unit
Collector − Emitter
Voltage
VCEO 40 60 80 100 Vdc
Collector − Base Voltage VCB 40 60 80 100 Vdc
Emitter − Base Voltage VEB 5.0 Vdc
Collector Current
− Continuous
− Peak
IC
1.0
3.0
Adc
Base Current IB0.4 Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD30
0.24
W
W/°C
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
2.0
0.016
W
W/°C
Unclamped Inductive
Load Energy (Note 1)
E 32 mJ
Operating and Storage
Junction Temperature
Range
TJ, Tstg – 65 to + 150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W
Thermal Resistance, Junction−to−Case RqJC 4.167 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. This rating based on testing with LC = 20 mH, RBE = 100 W, VCC = 10 V, IC =
1.8 A, P.R.F = 10 Hz
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−220AB
CASE 221A
STYLE 1
MARKING
DIAGRAM
1 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
40, 60, 80, 100 VOLTS,
80 WATTS
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123
4
TIPxxx = Device Code:
29, 29A, 29B, 29C
30, 30A, 30B, 30C
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
TIPxxxG
AYWW
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
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2
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
≈8.0 k ≈120
BASE
EMITTER
COLLECTOR
≈8.0 k ≈120
ORDERING INFORMATION
Device Package Shipping
TIP29 TO−220 50 Units / Rail
TIP29G TO−220
(Pb−Free)
50 Units / Rail
TIP29A TO−220 50 Units / Rail
TIP29AG TO−220
(Pb−Free)
50 Units / Rail
TIP29B TO−220 50 Units / Rail
TIP29BG TO−220
(Pb−Free)
50 Units / Rail
TIP29C TO−220 50 Units / Rail
TIP29CG TO−220
(Pb−Free)
50 Units / Rail
TIP30 TO−220 50 Units / Rail
TIP30G TO−220
(Pb−Free)
50 Units / Rail
TIP30A TO−220 50 Units / Rail
TIP30AG TO−220
(Pb−Free)
50 Units / Rail
TIP30B TO−220 50 Units / Rail
TIP30BG TO−220
(Pb−Free)
50 Units / Rail
TIP30C TO−220 50 Units / Rail
TIP30CG TO−220
(Pb−Free)
50 Units / Rail
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
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3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) (Note 2)
TIP29, TIP30
TIP29A, TIP30A
TIP29B, TIP30B
TIP29C, TIP30C
VCEO(sus)
40
60
80
100
−
−
−
−
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) TIP29, TIP29A, TIP30, TIP30A
(VCE = 60 Vdc, IB = 0) TIP29B, TIP29C, TIP30B, TIP30C
ICEO
−
−
0.3
0.3
mAdc
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0) TIP29, TIP30
(VCE = 60 Vdc, VEB = 0) TIP29A, TIP30A
(VCE = 80 Vdc, VEB = 0) TIP29B, TIP30B
(VCE = 100 Vdc, VEB = 0) TIP29C, TIP30C
ICES
−
−
−
−
200
200
200
200
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO −1.0 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc)
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)
hFE 40
15
−
75
−
Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc) VCE(sat) −0.7 Vdc
Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc) VBE(on) −1.3 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 3)
(IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT3.0 −MHz
Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 − −
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%
3. fT = ⎪hfe⎪• ftest
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
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4
0.03
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.03
hFE, DC CURRENT GAIN
0.5
5.0
70
3.0
100
7.0
300
30
0.1 0.3
0.07 1.0
TJ = 150°C
25°C
-55°C
VCE = 2.0 V
500
10
50
3.0
t, TIME (s)μ
Figure 3. Turn−Off Time
IC, COLLECTOR CURRENT (AMP)
IB1 = IB2
IC/IB = 10
ts′ = ts - 1/8 tf
TJ = 25°C
ts′
TURN-ON PULSE
APPROX
+11 V
Vin 0
VEB(off) t1
APPROX
+11 V
Vin
t2
TURN-OFF PULSE
t3
t1 ≤ 7.0 ns
100 < t2 < 500 ms
t3 < 15 ns
DUTY CYCLE ≈ 2.0%
APPROX -9.0 V
RB and RC VARIED TO OBTAIN
DESIRED CURRENT LEVELS.
SCOPE
RC
RB
VCC
Vin
Cjd << Ceb
-4.0 V
Figure 4. Switching Time Equivalent Circuit
0.03
Figure 5. Turn−On Time
IC, COLLECTOR CURRENT (AMP)
0.02 0.1 3.0
0.07
1.0
1.0
IC/IB = 10
TJ = 25°C
tr @ VCC = 10 V
t, TIME (s)μ
0.5
0.3
0.1
0.05
0.05 0.3 0.5
td @ VEB(off) = 2.0 V
0.03
0.7
2.0
0.07 0.7
tr @ VCC = 30 V
0.05 0.7
tf @ VCC = 10 V
tf @ VCC = 30 V
0.07
1.0
0.5
0.3
0.1
0.05
0.03
0.7
2.0
0.2
0.1 3.01.00.05 0.3 0.50.07 0.7 2.00.2
Figure 6. Active Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE, (VOLTS)
10
0.1 10
SECOND BREAKDOWN LIMITED
THERMALLY LIMITED @ TC = 25°C
BONDING WIRE LIMITED
IC, COLLECTOR CURRENT (AMPS)
1.0 20 10
0
40
3.0
4.0
0.1
TIP29, 30
TIP29A, 30A
TIP29B, 30B
TIP29C, 30C
TJ = 150°C
CURVES APPLY BELOW
RATED VCEO
1 ms
dc
5 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
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5
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.036 0.64 0.91
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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Phone: 81−3−5817−1050
TIP29B/D
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