NDS9948 ee FAIRCHILD SEMICONDUCTOR NDS9948 Dual P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. February 1996 Features B -2.3A, -60V. Rosiow = 0.25Q @ V,, = -10V. = High density ceil design for low R, DS(ON) = High power and current handling capability in a widely used surface mount package. = Dual MOSFET in surface mount package. Absolute Maximum Ratings T, = 25 C unless otherwise noted Symbol | Parameter NDS9948 Units Voss Drain-Source Voltage -60 Voss Gate-Source Voltage +20 is Drain Current -Continuous T,=25C Wate ta} 42.3 - Pulsed T,=25C +10 -Continuous T,=70C (eteta) +18 P, Power Dissipation for Dual Operation 2 Ww Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note te) 0.9 Ty Tere Operating and Storage Temperature Range -65 to 150 Cc THERMAL CHARACTERISTICS Roa Thermal Resistance, Junction-to-Ambient (Note 1a) 78 CW Bac Thermal Resistance, Junction-to-Case (Note 1) 40 CW 2-244 NDS9948. SAMElectrical Characteristics (1, = 25C unless otherwise noted) Symbo! _| Parameter Conditions [ in | Typ | Max | units OFF CHARACTERISTICS BV eg Drain-Source Breakdown Voltage Veg = 0 V, |= -250 LA 60 v loss Zero Gate Voltage Drain Current Vog = 40 V, Vag=0V -2 pA T,=55C 25 | WA loge Gate - Body Leakage, Forward Vog = 20-V, Vag = OV 100 | nA lesser Gate - Body Leakage, Reverse Vos = -20V, Vog= 0 V -100 | nA ON CHARACTERISTICS (nete2) Vesey Gate Threshold Voltage Vos = Ves 1p = -250 pA -1 24), 3 v [7,-1258c | -o8 | 2 | 26 Rosiow Static Drain-Source On-Resistance Vog = -10V, I,=-23A 021 | 025 | Oo [t,=125C 03 | 04 Vog = 4.5 V, 1, =-1.6A 0.36 | 05 leyony On-State Drain Current Veg =-10V, Vag =-5 V -10 A Ors Forward Transconductance Vog = 15 V, 1, =-2.3A 3.5 s DYNAMIC CHARACTERISTICS om Input Capacitance Vos =-25V, Veg = OV, 570 pF Cun Output Capacitance f = 1.0 MHz 140 pF C., Reverse Transfer Capacitance 40 pF SWITCHING CHARACTERISTICS (note2) boon Tum - On Delay Time Vop =-30V, I, =-1A, 8 15 ns t, Tum - On Rise Time Veen = 10 V, Rog, = 6.0 20 40 ns toot Tum - Off Delay Time 20 40 ns t Tum - Off Fall Time 5 20 ns Q, Total Gate Charge Vog =-30V, 16 25 nc Q,. Gate-Source Charge b= -29A, Veg =-10V nc Qu _| Gate-Drain Charge nc 2-245 NDS9948.SAM 8766SQNNDS9948 Electrical Characteristics (1, = 25C unless otherwise noted) design while R,,, is determined by the user's board design. = ie rnp Pol) = 925 = Racha = (00) x Rosomer, Typical R,,, for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 78CAW when mounted on a 0.5 in pad of 20z cpperr. b, 125C/W when mounted on a 0.02 in pad of 20z cpper. . 195CAW when mounted on a 0.004 in pad of 20z cpper, fa 1b , fo 2. Pulse Test: Pulse Width < 300ys, Duty Cycle < 2.0%. Symbol | Parameter | Conditions | Min Typ | Max | Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS \, Maximum Continuous Drain-Source Diode Forward Current A7 A Vep Drain-Source Diode Forward Voltage Ves =OV, l=-2.3A (Note2) 0.98 | -12 v Notes: 1. Ry is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R,,. is guaranteed by ae bdr 2-246 NDS9948.SAMTypical Electrical Characteristics lb . DRAIN-SOURCE CURRENT (A) 9 4 2 3 4 5 6 Vpg - DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. ry ano Rosion) VORMALIZED DRAIN-SQURCE ON-RESISTANCE R DS(ON) MORMALIZED A DS(on) NORMALIZED ORAIN-SOURCE ON-RESISTANGE a 0.5 0 3 6 9 12 18 Ip. DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. Vag =-10V Gs DRAIN-SOURCE ON-RESISTANCE 0.8 _ ~ | | os . 1. 7 . oe -50 25 0 25 50 75 400 125 150 0 3 6 9 42 "5 T, , JUNCTION TEMPERATURE (C) b . DRAIN CURRENT (A) Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Drain with Temperature. Current and Temperature. -10 cee 1.2 -_ - - _- [ so J IY ; Vog =-10V Ty = 88C Aysce s ; o 125C a Vos Vas | V gS T tp = -250nA z q 5 / g 8 ~ Z 6} -- if Na 1 a - 3 WU + PN | z . St | z 4 2 gy _ {| | _ < | zo. a gr a > 2 : _ 3 0.8 - fon ~ ! wu . : < 2 3 -4 a 5 -6 7 0.7 a 4 i aba ba V_. . GATE TO SOURCE VOLTAGE (Vv) 50-25 25 50 75 100125 180 as T,, JUNCTION TEMPERATURE (C) Figure 5. Drain Current Variation with Gate Figure 6. Gate Threshold Variation with Voitage and Temperature. Temperature. 2-247 NDS9948.SAM 8766SQNNDS9948 Typical Electrical Characteristics (continued) = = ly = -250pA goa - a a - a 5 ws Lo] Ns zz BS 2 105 58 aA ad < ge ao > L ag : 5 \ LT 6 0.95} @ zt < ! 5 x | i a ag -50 +25 G 25 50 75 100-126 150 q , JUNCTION TEMPERATURE (C) Figure 7. Breakdown Voltage Variation with Temperature. 1000 a oS oe w o a nm 2 3S e oS CAPACITANCE (pF) 50 ~~$ = 1 MHz I = 30 L ___ Veg = OV 20 bee eeed Lil wd. . 01 02 05 1 2 8 10 20 50 -Vpg . DRAIN TO SOURCE VOLTAGE (V) Figure 9. Capacitance Characteristics. -Vpp Oo <= R Vin > L L vo at Vout Vo s f | \ Figure 11. Switching Test Circui.t Vout TJ= -55C 0.01 -Ig, REVERSE DRAIN CURRENT (A) 0.001 hoe +0.3 +0.6 0.9 1.2 1.5 1.8 2.4 Yop , BODY DIODE FORWARD VOLTAGE () Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. -Vgg GATE-SOURCE VOLTAGE (V) 0 cece cme vebies te 15 20 10 Q g . GATE CHARGE (nC) Figure 10. Gate Charge Characteristics. ton tote >t, tao) ty tavon) 10% ~ PULSE WIDTH *! INVERTED Figure 12. Switching Waveforms. 2-248 NDS9948.SAMTypical Electrical Characteristics (continued) 8V66SGN 20 10 g 5 Ww a = a = 2 wi a 1 3 q = 5 08 g Qo Zz 2 = Vgg = -10V 8 S, 01 == SINGLE PULSE * 0.05 Fo Rajat 100 C/W o Ta = 25C 2 0.0% LY ULil 0.4 0.2 0.5 1 2 5 to 60 100 |), DRAIN CURRENT (A) + Vos , DRAIN-SOURCE VOLTAGE () Figure 13. Transconductance Variation with Drain Figure 14. Maximum Safe Operating Area. Current and Temperature. 05 WwW we ge 02 Raga =r) * Rosa ie o. R gJa = See Note 1 ae 995 4 r 4 aa uz 0.02 Peed | z 1 tu ZF oat ee ; - Qe . = -t, = = 0.005 7 ups =o Ty Ta =P Reta) = & 0.002 ! Duty Cycle, O=t ,/ tp ; & 0.001. - I ~ Ho 0.0001 0.001 oot oA 1 10 100 300 ti, TIME (sec) Figure 15. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. 2-249 NOS9948.SAM