Continental Device India Limited Data Sheet Page 1 of 3
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistor
Marking
BC807 = 5D
BC807–16 = 5A
BC807–25 = 5B
BC807-40 = 5C
BC808 = 5H
BC808–16 = 5E
BC808–25 = 5F
BC808–40 = 5G
ABSOLUTE MAXIMUM RATINGS BC807 8C808
Collector–emitter voltage (VBE = 0) –VCES max. 50 30 V
Collector–emitter voltage (open base) –VCE0 max. 45 25 V
Collector current (peak value) –ICM max. 1000 mA
Total power dissipation up to Tamb = 25 °C Ptot max. 250 mW
Junction temperature Tjmax. 150 °C
Transition frequency at f = 100 MHz
–IC = 10 mA; –VCE = 5 V fT>80
MHz
BC807
BC808
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
3
2
1
IS / IECQC 700000
IS / IEC
Q
C 750100
IS/ISO 9002
Lic#
Q
SC/L - 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
SOT-23 Formed SMD Package
Continental Device India Limited Data Sheet Page 2 of 3
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values BC807 BC808
Collector–emitter voltage (VBE = 0) –VCES max. 50 30 V
Collector–emitter voltage (open base)
–IC = 10 mA –VCE0 max. 45 25 V
Emitter–base voltage (open collector) –VEB0 max. 5 5 V
Collector current (DC) –ICmax. 500 mA
Collector current (peak value) –ICM max. 1000 mA
Emitter current (peak value) IEM max. 1000 mA
Base current (DC) –IBmax. 100 mA
Base current (peak value) –IBM max. 200 mA
Total power dissipation at Tamb = 25 °C * Ptot max. 250 mW
Storage temperature Tstg –55 to +150 °C
Junction temperature Tjmax. 150 °C
THERMAL RESISTANCE*
From junction to ambient Rth j–a = 500 K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; –VCB = 20V; Tj = 25°C –ICB0 max. 100 nA
IE = 0; –VCB = 20V; Tj = 150°C –ICB0 max. 5 mA
Emitter cut–off current
IC = 0; VEB = 5 V –IEB0 max. 10
m
A
Base emitter voltage *
–IC = 500 mA; –VCE = 1 V –VBE max. 1,2 V
Saturation voltage
–IC = 500 mA; –IB = 50 mA –VCEsat max. 700 mV
D.C. current gain
–IC = 500 mA; –VCE = 1 V hFE min. 40
–IC = 100 mA; –VCE = 1 V; BC807; BC808 hFE 100 to 600
BC807–16 hFE 100 to 250
BC808–16
BC807–25 hFE 160 to 400
BC808–25
BC807–40 hFE 250 to 600
BC808–40
Transition frequency at f = 100 MHz
–IC = 10 mA; –VCE = 5 V fT>80
MHz
Collector capacitance at f = 1 MHz
IE = Ie = 0; –VCB = 10 V Cctyp. 8 pF
BC807
BC808
Continental Device India Limited Data Sheet Page 3 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
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Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
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