IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistor Marking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector-emitter voltage (VBE = 0) Collector-emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 C Junction temperature Transition frequency at f = 100 MHz -IC = 10 mA; -VCE = 5 V Continental Device India Limited Data Sheet -VCES -VCE0 -ICM Ptot Tj max. max. max. max. max. fT > BC807 50 45 8C808 30 V 25 V 1000 mA 250 mW 150 C 80 MHz Page 1 of 3 BC807 BC808 RATINGS (at TA = 25C unless otherwise specified) Limiting values BC807 -VCES max. 50 Collector-emitter voltage (VBE = 0) Collector-emitter voltage (open base) -VCE0 max. 45 -IC = 10 mA Emitter-base voltage (open collector) -VEB0 max. 5 Collector current (DC) Collector current (peak value) Emitter current (peak value) Base current (DC) Base current (peak value) Total power dissipation at Tamb = 25 C * Storage temperature Junction temperature -I C -ICM IEM -IB -IBM Ptot Tstg Tj THERMAL RESISTANCE* From junction to ambient Rth j-a CHARACTERISTICS Tj = 25 C unless otherwise specified Collector cut-off current IE = 0; -VCB = 20V; Tj = 25C IE = 0; -VCB = 20V; Tj = 150C Emitter cut-off current IC = 0; VEB = 5 V Base emitter voltage * -IC = 500 mA; -VCE = 1 V Saturation voltage -IC = 500 mA; -IB = 50 mA D.C. current gain -IC = 500 mA; -VCE = 1 V -IC = 100 mA; -VCE = 1 V; BC807; BC808 max. 25 V 5 V 500 1000 1000 100 200 250 -55 to +150 150 mA mA mA mA mA mW C C 500 K/W = -ICB0 -ICB0 max. max. 100 nA 5 mA -IEB0 max. 10 mA -VBE max. 1,2 V -VCEsat max. 700 mV hFE hFE min. 40 100 to 600 BC807-16 BC808-16 hFE 100 to 250 BC807-25 BC808-25 hFE 160 to 400 BC807-40 BC808-40 hFE 250 to 600 fT > Cc typ. Transition frequency at f = 100 MHz -IC = 10 mA; -VCE = 5 V Collector capacitance at f = 1 MHz IE = Ie = 0; -VCB = 10 V Continental Device India Limited max. max. max. max. max. max. BC808 30 V Data Sheet 80 MHz 8 pF Page 2 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com Continental Device India Limited Data Sheet Page 3 of 3