
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC2712
Document number: BL/SSSTC021 www.galaxycn.com
Rev.A 2
Parameter Symbol Test conditions MIN
TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V
Collector-emitter breakdown
voltage V(BR)CEO I
C=0.1mA,IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V
Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA
DC current gain hFE VCE=6V,IC=2mA 70 700
Collector-emitter saturation
voltage VCE(sat) IC=100mA, IB=10mA 0.1 0.25 V
Transition frequency fT VCE=10V, IC= 1mA 80 MHz
Output capacitance Cob VCB=10V, IE=0,f=1kHz 2.0 3.5 pF
Noise Figure NF VCE=6V,IC=0.1mA,f=1kHz 1.0 10 dB
CLASSIFICATION OF hFE(1)
Rank O Y GR BL
Range 70-140 120-240 200-400 350-700
Marking LO LY LG LL