Transys Electronics L I M I T E D SOT-323 Plastic-Encapsulated Transistors 2N7002W MOSFET ( N-Channel ) SOT-323 1. GATE FEATURES 2. SOURCE 1. 25 A0. 05 1. 01 REF 3. DRAIN Power dissipation PD : 0.2 W (Tamb=25) 0. 30 1. 30 A0. 03 Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range 2. 00 A0. 05 2. 30 A0. 05 Unit: mm TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) MIN TYP VGS=0 V, ID=10 A 60 70 Vth(GS) VDS=VGS, ID=250 A 1 1.5 Gate-body Leakage* lGSS VDS=0 V, VGS=20 V 10 Zero Gate Voltage Drain Current * IDSS VDS=60 V, VGS=0 V 1 VDS=60V,VGS=0V,Tj=125 500 On-state Drain Current * ID(ON) Drain-Source On-Resistance * rDS(0n) Parameter Drain-Source Breakdown Voltage * Gate-Threshold Voltage* Symbol Test V(BR)DSS conditions VGS=10 V, VDS=7.5 V 1000 7.5 VGS=10 V, ID=500 mA 4.4 13.5 Input Capacitance Ciss VDS=25 V, VGS=0 V Output Capacitance COSS Reverse Transfer Capacitance CrSS Turn-on Time td(0n) Turn-off Time td(off) UNIT V nA A mA 3.2 VDS=10 V, ID=200 mA * 2 VGS=5 V, ID=50 mA g FS Forward Tran conductance 500 MAX 80 ms 22 50 11 25 f=1 MHz 2 5 VDD=30 V, RL=150 ID=200 mA, VGEN=10 V RG=25 7 20 11 20 pF SWITCHING * Pulse test , pulse width300s, duty cycle2%. Marking: K72 ns