FEATURES
MECHANICAL DATA
* Case: Molded plastic
For general AF applications
High collector current
High current gain
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
BC817-16LT1
BC817-25LT1
BC817-40LT1
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR (NPN)
2007-3
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
DC current gain (VCE= 1V, IC= 100mA)
Collector cut-off current (VCB= 45V, IE=0)
Emitter cut-off current (VEB= 4V, IC=0)
Collector-emitter saturation voltage (IC= 500mA, IB= 50mA)
Base-emitter saturation voltage (IC= 500mA, IB= 50mA)
Transition frequency (VCE= 5V, IC= 10mA, f= 100MHZ)
CHARACTERISTICS
MARKING:
SYMBOL UNITS
-
-
-
-
0.1
µA
µA
V
V
V
V
V
Collector-base breakdown voltage (IC= 10µA, IE=0)
Collector-emitter breakdown voltage (IC= 10mA, IB=0)
Emitter-base breakdown voltage (IE= 1µA, IC=0)
VCBO
VCEO
VEBO
IEBO
hFE(1)
ICBO
VCE(sat)
VBE(sat)
fT
MAX.
50
45
5
160
100
MIN.
16LT1 25LT1 40LT1 16LT1 25LT1 40LT1
0.055(1.40)
0.047(1.20)
- 0.1
50
45
0.5
-55 -150
0.3
5
-
-
-
-
1.2
Base-emitter voltage (VCE= 1V, IC= 500mA) V
VBE(ON)
- 1.2
MHZ
Collector capactiance (VCB=10V, f = 1MHz) Cob
10 pF
0.7
400100 250250 600
BASE
EMITTER
COLLECTOR
*
*
*Low collector-emitter saturation voltage
*
1
1
2
3
2
3
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Collector current-continuous
Collector dissipation
Junction and storage temperature
CHARACTERISTICS VALUESYMBOL UNITS
A
W
oC
V
V
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
TJ,Tstg
IC
PC
16LT1--6A; 25LT1--6B; 40LT1--6C
RATING AND CHARACTERISTICS CURVES ( BC817-16LT1/-25LT1/-40LT1 )
Figure2. COLLECTOR-EMITTER SATURATION
VOLTAGE vs.COLLECTOR CURRENT
Figure4. BASE-EMITTER ON VOLTAGE vs.
COLLECTOR CURRENT
I
C
, COLLECTOR CURRENT (A)
Figure1. TYPICAL PULSE CURRENT GAIN
vs. COLLECTOR CURRENT
I
C,
COLLECTOR CURRENT (A)
Ic, COLLECTOR CURRENT (A)
Figure3. BASE-EMITTER STURATION VOLTAGE
vs. COLLECTOR CURRENT
Ic,COLLECTOR CURRENT(mA)
V
CE(SAT)
, COLLECTOR-EMITTER VOLTAGE (V)
h
FE
, TYPICAL PULSE CURRENT GAINV
BESAT
, BASE-EMITTER VOLTAGE (V)
V
BE(ON)
, BASE-EMITTER ON VOLTAGE (V)
0
0.001
100
300
500
400
0.01 210.1
200
0.3
0.2
0.1
0.6
0.5
0.4
0
0.01 3
0.1 1
0.6
0.8
1.0
1.2
0.4
0.2
110 100 1000
10.01 0.1
0.001
0.8
0.6
0.4
0.2
1
0
10
20
30
40
Figure5. COLLECTOR-CUT OFF CURRENT
vs. COLLECTOR CURRENT Figure6. COLLECTOR-BASE CAPACITANCE
vs. COLLECTOR-BASE VOLTAGE
TA, AMBIENT TEMPERATURE (
O
C) VCB, COLLECTOR-BASE VOLTAGE (V)
I
CBO
, COLLECTOR CURRENT (nA)
C
CB
, COLLECTOR-BASE CAPACITANCE (pF)
150125100
0.01
25 50 75 0 4 8 12 16 20 24 28
0.1
1
10
100
VCE=5.0V
25
O
C
-40
O
C
125
O
C
β = 10
β = 10
25
O
C
25
O
C
-40
O
C
-40
O
C
125
O
C
125
O
C
VCE= 5V
VCB= 40V
125
O
C
25
O
C
-40
O
C
RATING AND CHARACTERISTICS CURVES ( BC817-16LT1/-25LT1/-40LT1 )
Figure8. POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TEMPERATURE (
O
C)
Figure7. GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
I
C,
COLLECTOR CURRENT (mA)
P
D
, POWER DISSIPATION (mW)
h
FE
, GAIN BANDWIDTH PRODUCT (MHz)
0
1
100
300
500
400
10 1000100
200
200
150
100
50
350
300
250
0
0 25 50 150
75 100 125
VCE=10V
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