IRF520VSPbF
IRF520VLPbF
HEXFET® Power MOSFET
06/30/04
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 3.4
RθJA Junction-to-Ambient (PCB Mounted, steady state)** ––– 40
Thermal Resistance
www.irf.com 1
VDSS = 100V
RDS(on) = 0.165Ω
ID = 9.6A
S
D
G
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the
lowest possible on-resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF520VL) is available for low-profile applications.
lAdvanced Process Technology
lUltra Low On-Resistance
lDynamic dv/dt Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lOptimized for SMPS Applications
lLead-Free
Description
PD - 95484
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.6
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.8 A
IDM Pulsed Drain Current 37
PD @TC = 25°C Power Dissipation 44 W
Linear Derating Factor 0.29 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current9.2 A
EAR Repetitive Avalanche Energy4.4 mJ
dv/dt Peak Diode Recovery dv/dt 7.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
D2Pak
IRF520VS TO-262
IRF520VL
°C/W
IRF520VS/LPbF
2www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 9.2A, VGS = 0V
trr Reverse Recovery Time ––– 83 120 ns TJ = 25°C, I F = 9.2A
Qrr Reverse Recovery Charge ––– 220 330 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
9.6
37
A
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 1.0mH
RG = 25Ω, IAS = 9.2A, VGS=10V (See Figure 12)
ISD ≤ 9.2A, di/dt ≤ 360A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
Uses IRF520V data and test conditions.
**When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– – –– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.165 ΩVGS = 10V, ID = 5.5A
VGS(th) Gate Threshold Voltage 2.0 – –– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 1.9 ––– ––– S VDS = 50V, ID = 5.5A
––– ––– 25 µA VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, V GS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge –– – ––– 22 ID = 9.2A
Qgs Gate-to-Source Charge ––– –– – 5.2 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 7. 0 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 6.9 ––– VDD = 50V
trRise Time ––– 23 ––– ID = 9.2A
td(off) Turn-Off Delay Time ––– 30 – –– RG = 18Ω
tfFall Time ––– 24 ––– VGS = 10V, See Fig. 10
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 560 ––– VGS = 0V
Coss Output Capacitance ––– 81 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 10 ––– pF ƒ = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy ––– 15044mJ IAS = 9.2A, L = 1.0mH
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance ––– –––
S
D
G
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
IRF520VS/LPbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1 1 10 100
20µs PU LSE WIDT H
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1 10 100
20µs PU LSE WIDT H
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
4.0 5.0 6.0 7.0 8.0 9.0
V = 5 0 V
20µs PULSE WIDTH
DS
V , Gate-to-Sou rce Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
9.2A
IRF520VS/LPbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
04812 16 20 24
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
9.2A
V = 20V
DS
V = 50V
DS
V = 80V
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
110 100
VDS, Dr ain-to-Source Voltage (V)
0
200
400
600
800
1000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + Cgd
1 10 100 1000
VDS , Drain-t oSource Voltage (V )
0.1
1
10
100
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175° C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
IRF520VS/LPbF
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Durati on ( s ec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25 50 75 100 125 150 17
5
0.0
2.0
4.0
6.0
8.0
10.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
IRF520VS/LPbF
6www.irf.com
QG
QGS QGD
V
G
Charge
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150 175
0
20
40
60
80
Starting T , Junction Tempera t ur e ( C)
E , Single Pulse Avalanche Energy ( m J)
J
AS
°
ID
TOP
BOTTOM
3.8A
6.5A
9.2A
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
IRF520VS/LPbF
www.irf.com 7
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For N-channel HEXFET® power MOSFETs
IRF520VS/LPbF
8www.irf.com
D2Pak Part Marking Information
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
Note: "P" in assembly line
pos ition indicates "L ead-F ree"
F530S
THIS IS AN IRF530S WI TH
LOT C ODE 8024
A SSEMBLED O N WW 02, 2000
IN THE ASSEMBLY LIN E "L"
AS S E MB L Y
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBE
R
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
F530S
A = ASS EMBL Y S ITE CODE
WEEK 02
P = DES IGNATES LEAD-FREE
PRODUCT (OPTIONA L)
RECTIFIER
INTERNATIONAL
LOGO
LOT CODE
AS S EMBLY YEAR 0 = 2000
DATE C ODE
PART NUMBER
IRF520VS/LPbF
www.irf.com 9
TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
AS S E MBL Y
LOT CODE
RECTIFIER
INTERNATIONAL
ASSEMBLED ON WW 19, 1997
Note: "P" in assembly line
pos ition indicates "L ead-F ree"
IN THE A SSEMBLY LINE "C" LOGO
THI S I S AN IRL3103 L
LOT CODE 1789
EXAMPLE:
LINE C
DATE CODE
WEEK 19
YEAR 7 = 1997
PART NUMBER
PART NUMBER
LOGO
LOT CODE
ASSEMBLY
INTERNATIONAL
RECTIFIER
PRODUCT ( OPTIONAL)
P = DESIGN ATES LEAD -FREE
A = ASS EMBLY SITE CODE
WEE K 1 9
YEAR 7 = 1997
DATE CODE
OR
IRF520VS/LPbF
10 www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/04
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
F
EED DI RE CTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
F
EED DI RE CTION
10. 90 (. 4 29 )
10. 70 (. 4 21 ) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457 )
11.40 (.449 ) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957
)
23.90 (.941
)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.07 9)
23.90 (.941 )
60.00 (2.362
)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA -418.
2. CONTROLLING DIME NSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
