Standard Power MOSFETs RFM10N12, RFM10N15, RFP10N12, RFP10N15 N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V 150 V fos(on): 0.3.2 Features: w SOA is power-dissipation limited a Nanosecond switching speeds g@ Linear transfer characteristics w High input impedance m Majority carrier device File Number 1445 Ss 9203-3370) N-Channel Enhancement Mode TERMINAL DESIGNATIONS RFM10N12 RFM10N15 The RFM10N12 and RFM10N15 and the RFP10N12 and RFP10N15* are n-channel enhancement-miode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate- drive power. These types can be operated directly from integrated circuits. The RFM-types are supplied in the JEDEC TO-204AA steel package and the RFP-types in the JEDEC TO-220AB plastic package. The RFM and RFP series were formerly RCA developmental (re enee) numbers TA9192 and TA9212, respectively. MAXIMUM RATINGS, Absolute-Maximum Values (Tc=25 C): RFM10N12 RFM10N15 DRAIN-SOURCE VOLTAGE ........... Voss 120 150 DRAIN-GATE VOLTAGE (Rys=1 MQ) ... Voen 120 150 GATE-SOURCE VOLTAGE ............. Ves - DRAIN CURRENT, RMS Continuous ..... lp Pulsed .............. fom _. POWER DISSIPATION @ Tc=25C ....... P, 75 75 Derate above T.=25C 0.6 0.6 OPERATING AND STORAGE TEMPERATURE .................. Ti. Tstg = DRAIN SOURCE (FLANGE ) @ GATE 92CS-37801 JEDEC TO-204AA RFP10N12 RFP10N15 SOURCE ORAIN --- GATE 92C8-39528 TOP VIEW JEDEC TO-220AB RFP10N12 RFP1ON15 120 150 v 120 150 v 20 v 10 A 25 A 60 60 Ww 0.48 0.48 wre -55 to +150 C Standard Power MOSFETs RFM10N12, RFM10N15, RFP10N12, RFP10N15 ELECTRICAL CHARACTERISTICS At Case Temperature (T.) = 25 C unless otherwise specified LIMITS RFM10N12 RFM10N15 TEST RFP10N12 RFP10N15 CHARACTERISTICS SYMBOL CONDITIONS MIN. | MAX.} MIN. | MAX.|] UNITS lb =1mMA Drain-Source Breakdown Voltage BVoss Ves = 0 120 _ 150 - Vv Gs Ves = Vos Gate Threshold Voltage Vascni 2 4 2 4 Vv Ip =2mA Vos = 100 V _ 1 _ _ Zero Gate Voltage Drain Current Vos = 120V = 1 lpss Tc = 126C uA Vos = 100 V _ 50 _ _ Vos =120V _ _ _ 50 Gate-Source Leakage Current lass Ves = + 20V - 100 _ 100 nA Vos =0 ve ~ ov 15 1.5 Drain-Source On Voltage Vos(on)* s Vv fo = 10A 4 4 Ves = 10 V Static Drain-Source On Resistance ros(on)* ID=5A _ 03 _ 03 o Ves =10V Vos = 10 V Forward Transconductance Ors" =5A 2 - 2 - mho b= Input Capacitance Ciss Vos=25 V _ 850 _ 850 Output Capacitance Coss Ves =OV _ 230 _ 230 pF Reverse Transfer Capacitance Crss f = IMHz 100 _ 100 Turn-On Delay Time ta(on) Vpp=75 V 40(typ.)} 60 | 40(typ.)| 60 Rise Time t ln =5A 165(typ.)| 250 | 168(typ.)/ 250 ns Turn-Off Delay Time ta(off) Rogen = Rgs = 50 Q] B0(typ.)] 135 | 9O0(typ.)] 135 Fall Time tr Ves = 10 V 90(typ.)| 135 | 90{typ.)] 135 RFM10N12, _ 4.67 _ 1.67 Thermal Resistance ROJC RFM10N15 C/W Junction-to-Case RFP10N12, _ 2.083 _ 2.083 RFP10N15 , , Pulsed: Pulse duration = 300 ws. max., duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS ; - LIMITS , TEST RFM10N12 RFM10N15 CHARACTERISTIC SYMBOL | coNDITIONS RFP10N12 RFPiON15 _| UNITS MIN. MAX. MIN. MAX. Diode Forward Voltage Vso Isn=5 A = 1.4 = 1.4 Vv . lr=4 A Reverse Recovery Time te dic/d:=100 A/ys 200(typ) 200(typ) ns Pulse Test: Width < 300 us, Duty Cycle < 2%. 3-405 . Standard Power MOSFETs RFM10N12, RFM10N15, RFFP'10N12, RFP10N15 #| CASE TEMPERATURE (To)=25 C | (CURVES MUST BE DERATED ere WITH INCREASE IN as Harte (PERATURE) et a fF < 1 10 a a E Zz & aw OPERATION IN THIS 3 AREA IS LIMITED z oa ac of Q) i TEESE ASE 2 4 6 6 2 4 6.6 2 4 6.6 J 10. 100 4000 DRAIN-TO- SOURCE VOLTAGE (Vps) Vv 92CS- 36157RI Fig. 1 Maximum safe operating areas for all types. * Vos, Ima 30 CASE TEMPERATURE [Tc 1C JUNCTION TEMPERATURE (TIC 9208 -34364R2 9208-34359. Fig. 2 Power vs. temperature derating curve for all types. Fig. 3 Typical normalized gate threshold voltage as a function of junction temperature for all types. Vos* PULSE TEST PULSE DURATION? 80,5 DUTY CYCLE s 2% Ip*5A Veg OV Froston w 2 a a fa & : i c 2 o H a F4 wa e > 5 Zz a = r= w 2 < 5 a z 6 JUNCTION TEMPERATURE (1,)~*C stes- 56178 GATE -~TO- SOURCE VOLTAGE iVgg)- $20$-34360R! Fig. 4 - Normalized drain-to-source on resisiance to junction tem- Fig. 5 Typical transfer characteristics for all types. perature for all types. 3-406 Standard Power MOSFETs RFM10N12, RFM10N15, RFP10N12, RFP10N15 112.5) 75| Vos Vors 37.5) Fig. 6 - Normalized switching waveforms for constant gate-current. Refer to RCA application notes AN-7254 and AN-7260. fo TO-SOURCE ON RESISTANCE (F Fig. 8 - Typical drain-to-source on resistance as a function drain Voss GATE SOURCE de VOLTAGE oo = Yoss Yoo = Yoss Yes* Veg = -10 0.75 Voss 0.75 Vogs: 0.50 Voss 0.50 Vpgs: 0.25 Voss 0.25 Vpgs DRAIN SOURCE VOLTAGE Ig (REF) ao GIREP) ig (ACT ig facn TIME Microseconds 920837659 lov PULSE TEST PULSE DURATION* 60,5 DUTY CYCLE 2% 4 DRAIN CURRENT (1p))A& 9208-34738 current for all types. e ' # o w Q = = o 2 & 9 a Zz < e 2 < & a Fig. 10 - Typical forward transconductance as a function of Vggt !OV PULSE TEST PULSE DURATION + 80,5 DUTY CYCLE s 2% x 0re 22sec TEMPERATURE (Tc wi259C Tv 8 2 3 4 5 6 ORAIN CURRENT (Ip)-A 9208-35156 drain current for ail types. Votts Yos Fig. 9 PULSE TEST PULSE DURATION *80ys DUTY CLYLE s 2% CASE TEMPERATURE 25C ~ < L oO a e z a oc e p o Zz < a a ' 2 ORAIN - TO-SO! 4 6 URCE VOLTAGE ( Vpg)-V 92CS-34362RAI Fig. 7 Typical saturation characteristics for all types. FREQUENCY (f)=1 all types. so ORAIN-TO- SOURCE VOLTAGE (Vg) V 9208-36156 Capacitance as a function of drain-to-source voltage for isa Yo TO SCOPE KELVIN CONTACT = 92CS-37369 Fig. 11 Switching Time Test Circuit 3-407