PD - 97486A AUIRF1405ZS AUIRF1405ZL AUTOMOTIVE GRADE Features l l l l l l l HEXFET(R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D V(BR)DSS 55V RDS(on) max. G ID S Description 150A D D Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. 4.9m G D S G D S D2Pak TO-262 AUIRF1405ZS AUIRF1405ZL G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25C, unless otherwise specified. Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS EAS (tested ) IAR EAR TJ TSTG Max. c Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw c h g d Parameter Junction-to-Case RJA Junction-to-Ambient (PCB Mount, steady state) i A W 1.5 20 270 420 See Fig.12a, 12b, 15, 16 W/C V mJ A mJ -55 to + 175 C 300 10 lbf in (1.1N m) y Thermal Resistance RJC Units 150 110 600 230 Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V y Typ. Max. Units --- 0.65 C/W --- 40 HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 07/01/2010 AUIRF1405ZS/L Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) Min. Typ. Max. Units gfs IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage 55 --- --- 2.0 88 --- --- --- Gate-to-Source Reverse Leakage --- --- 0.049 3.7 --- --- --- --- --- --- --- 4.9 4.0 --- 20 250 200 --- -200 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 75A V VDS = VGS, ID = 250A S VDS = 25V, ID = 75A A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C nA VGS = 20V e VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance --- --- --- --- --- --- --- --- 120 31 46 18 110 48 82 4.5 180 --- --- --- --- --- --- --- nC ns nH ID = 75A VDS = 44V VGS = 10V VDD = 25V ID = 75A RG = 4.4 VGS = 10V Between lead, e e D LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 4780 770 410 2730 600 910 --- --- --- --- --- --- S and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V pF G f Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 75 ISM (Body Diode) Pulsed Source Current --- --- 600 VSD trr Qrr ton Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time --- --- --- --- 30 30 1.3 46 45 (Body Diode)c A V ns nC D showing the integral reverse G S p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V TJ = 25C, IF = 75A, VDD = 25V di/dt = 100A/s e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L = 0.10mH RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 2 Conditions MOSFET symbol Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting TJ = 25C, L = 0.10mH, RG = 25, IAS = 75A, VGS =10V. This is applied to D 2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com AUIRF1405ZS/L Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level Machine Model TO-262 2 D Pak N/A MSL1 Class M4 (425V) AEC-Q101-002 ESD Human Body Model AEC-Q101-001 Charged Device Model RoHS Compliant Class H1C (2000V) Class C5 (1125V) AEC-Q101-005 Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF1405ZS/L 1000 1000 100 BOTTOM TOP 10 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 100 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 10 20s PULSE WIDTH Tj = 175C 20s PULSE WIDTH Tj = 25C 1 1 0.1 1 10 100 0.1 Fig 1. Typical Output Characteristics 100 Fig 2. Typical Output Characteristics 200 Gfs, Forward Transconductance (S) 1000 ID, Drain-to-Source Current () 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) T J = 150C 100 T J = 25C 10 VDS = 25V 20s PULSE WIDTH 175 150 T J = 25C 125 100 T J = 175C 75 50 25 0 1 4 6 8 10 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 1 12 0 25 50 75 100 125 150 175 200 ID,Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com nce AUIRF1405ZS/L 100000 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 75A C, Capacitance(pF) C oss = C ds + C gd 10000 C iss Coss 1000 Crss VDS= 44V VDS= 28V 10.0 8.0 6.0 4.0 2.0 100 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 40 60 80 100 120 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 10000 ID, Drain-to-Source Current (A) 1000.00 ISD, Reverse Drain Current (A) 20 T J = 175C 100.00 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 10.00 100 T J = 25C 1.00 VGS = 0V 0.10 0.0 0.5 1.0 1.5 2.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 2.5 100sec 10 Tc = 25C Tj = 175C Single Pulse 1msec 10msec 1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRF1405ZS/L 150 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 ID, Drain Current (A) 125 100 75 50 25 0 25 50 75 100 125 150 175 ID = 75A VGS = 10V 2.0 1.5 1.0 0.5 -60 -40 -20 0 T C , Case Temperature (C) 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRF1405ZS/L DRIVER L VDS D.U.T RG + V - DD IAS 20V VGS A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS , Single Pulse Avalanche Energy (mJ) 500 15V ID 31A 53A BOTTOM 75A TOP 400 300 200 100 0 tp 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V VGS(th) Gate threshold Voltage (V) 4.0 3.5 3.0 2.5 ID = 250A 2.0 1.5 .2F .3F 1.0 D.U.T. + V - DS VGS -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C ) 3mA IG ID Current Sampling Resistors Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Test Circuit www.irf.com 7 AUIRF1405ZS/L 10000 Avalanche Current (A) Duty Cycle = Single Pulse 1000 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.01 100 0.05 0.10 10 1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 300 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 75A 250 200 150 100 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy vs. Temperature 8 175 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav www.irf.com AUIRF1405ZS/L D.U.T Driver Gate Drive + - * D.U.T. ISD Waveform Reverse Recovery Current + RG V DD * dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period P.W. + + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% * ISD VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRF1405ZS/L D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information Part Number AUIRF1405ZS YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF1405ZS/L TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUIRF1405ZL YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRF1405ZS/L D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 12 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 www.irf.com AUIRF1405ZS/L Ordering Information Base part AUIRF1405ZL AUIRF1405ZS www.irf.com Package Type TO-262 D2Pak Standard Pack Form Tube Tube Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 50 50 800 800 AUIRF1405ZL AUIRF1405ZS AUIRF1405ZSTRL AUIRF1405ZSTRR 13 AUIRF1405ZS/L IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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