BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
1
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●Designed for Complementary Use with
BDV65, BDV65A, BDV65B and BDV65C
●125 W at 25°C Case Temperature
●12 A Continuous Collector Current
●Minimum hFE of 1000 at 4 V, 5 A
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.1 ms, duty cycle ≤ 10%
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
BDV64
BDV64A
BDV64B
BDV64C
VCBO
-60
-80
-100
-120
V
Collector-emitter voltage (IB = 0)
BDV64
BDV64A
BDV64B
BDV64C
VCEO
-60
-80
-100
-120
V
Emitter-base voltage VEBO -5 V
Continuous collector current IC-12 A
Peak collector current (see Note 1) ICM -15 A
Continuous base current IB-0.5 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 125 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W
Operating junction temperature range Tj-65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL260 °C
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
OBSOLETE
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
2
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage IC = -30 mA IB = 0 (see Note 4)
BDV64
BDV64A
BDV64B
BDV64C
-60
-80
-100
-120
V
ICEO
Collector-emitter
cut-off current
VCB = -30 V
VCB = -40 V
VCB = -50 V
VCB = -60 V
IB=0
IB=0
IB=0
IB=0
BDV64
BDV64A
BDV64B
BDV64C
-2
-2
-2
-2
mA
ICBO
Collector cut-off
current
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -120 V
VCB = -30 V
VCB = -40 V
VCB = -50 V
VCB = -60 V
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
-0.4
-0.4
-0.4
-0.4
-2
-2
-2
-2
mA
IEBO
Emitter cut-off
current VEB = -5 V IC=0 -5 mA
hFE
Forward current
transfer ratio VCE = -4 V IC= -5 A (see Notes 4 and 5) 1000
VCE(sat)
Collector-emitter
saturation voltage IB = -20 mA IC= -5 A (see Notes 4 and 5) -2 V
VBE
Base-emitter
voltage VCE = -4 V IC= -5 A (see Notes 4 and 5) -2.5 V
VEC
Parallel diode
forward voltage IE = -10 A IB = 0 (see Notes 4 and 5) -3.5 V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1°C/W
RθJA Junction to free air thermal resistance 35.7 °C/W
OBSOLETE
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
3
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -20-1·0 -10
hFE - Typical DC Current Gain
100
1000
10000 TCS145AD
TC = -40°C
TC = 25°C
TC = 100°C
VCE = -4 V
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -20-1·0 -10
VCE(sat) - Collector-Emitter Saturation Voltage - V
-2·0
-1·5
-1·0
-0·5
0
TCS145AE
TC = -40°C
TC = 25°C
TC = 100°C
tp = 300 µs, duty cycle < 2%
IB = IC / 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -20-1·0 -10
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
-2·5
-2·0
-1·0
-1·5
-0·5
0
TCS145AF
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
OBSOLETE
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
4
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
THERMAL INFORMATION
Figure 4.
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
0 25 50 75 100 125 150
Ptot - Maximum Power Dissipation - W
0
20
40
60
80
100
120
140 TIS140AA
OBSOLETE
