Ba DEP sana720 oooo304 a BP v+_29- 6, GENERAL DIODE CORP SILICON PLANAR TRANSISTORS SMALL SIGNAL 2 TYPE 2N726 | PNP 25 , 20] 15 45 10 1 6 1 1 10 140 5 _ 1 25 25 To-18 2N727 - {| PNP 25 20] - 30 120 io 1 6 1 1 10 140, 5 - 1 25 25 To-18 2N869 | PNP 25 18 20 60 io 5 11 1 10 160 9 _ 01 25 25 To-18 2N868A | PNP 25 18 40 120 io 5. 15 1 1 10 400 6 _ 01 15 25 15 To-18 2N829 | NPN 45 45 40 120 0.01 5 1.0 10 0.5 10 30 8 4] 0.01 45 _- To-18 2N929A | NPN 60 45 40 120 860.01 5 0.5 0.9 0.5 10 45 8 4} 0.002 45 2 4 To-18 2N930 |NPN 45 45 100 300)=0.01 5 11 05 10 30 8 |, 34.00% 45 - To-18 2N830A [NPN 60 45 100 300 0.01 5 0.5 0.9 05 10 45 8 3] .002 45 2 45 To-18 2N1572 |NPN 125 80 15 50 5 5 115 2 10 30 10 ~ 1 40 _ ToS 2N1873 NPN 125 80 30 100 5 5 115 2 10 60 10 _ 1 40 -- Tos | 2N1874 [NPN 125 80 60 200 5 115; 2 10 60 10 -_ 1 40 _ To-5 2N2483 | NPN 60 60 40 120 0.01 5 0.35 O11 1 60 6 3] 0.01 45 10 (45 To-18 2N2484 1 NPN 60 60 100 500 0.01 5 0.35 O21 5 J. 60 6 2] 0.01 45 10 45, To-18 2N2588 |NPN 60 45 120 360 =(0.01 5 0.5 09 0.5 10 60 7 2} 0.02 45 _- To-18 2N3494 | PNP 80 80 40 to 10 3 9. 1 10 200 7 ad el 50 _- |, TOs: 2N3488 |PNP 120 120 40 10 10 a5 9 1 10 150 6 _ al 90 - = To 2N3498 | PNP. 80 80 40 10 10 3 9 1 10 200 7 =_ 1 50 Ji To-18 2N3497 | PNP 120 120 40 lo 10 35 (9 1 10 150 6 _ a 90 _ To-18 2N4269 JNPN 200 140 40 200 10 10 1613 1 lo ~ 5 - 1 150 _-_ To-18 2N4270 [NPN 200 140 40 200 to 10 1643 1 10 _ 5 _ 1 150 _- To-5 a NPN SILICON PLANAR EPITAXIAL LOGIC TRANSISTORS 5 t \e AN #) < : 2 2 9 Y <a . 2 2 a2 : a 4 % 232\ % t\% ee\ \ele\s\e\ 3% \S 5 2%, \ 34% 2%\=\8\s @g\ag\: we \''e" \% 2%\e% 22\ e\S\ee\ o% \e%\ 2 2 @ @ % D\S\S\ B eet e 2N708 "300 - | 25 10% | 06 09 1 10 | 400] 6 Jeo |~j | 05 15 |30 15 | Tots 2N706A 300 25 10 1 0.6 0.9 1 10 400 |] 5 }25 |40 175 05 15 30 15 | To-l8 2N706B 300 25 .. 10 1 04 0.9 1 10 400 | 5 25 |40 |75 05 15 300(15 To-18 2N708 360 40 10 1 0.4 0.8 1 10 400 | 6 25 [40 |70 -25 20 ris) 20 To-18 2N709 300 15 10 0.5 0.3 0.85 015 3 600 | 3 | 6 [15 | 15 05s 5 5 To-18 2N709A 300 15 6 30 90 10 0.5 03 0.85 0.15 3 900 | 3 | 6 [15 315 005 5 5 5 To-18 2N914 360 40 15 30 120 10 =1 07 0.8 20 200 60 | 6 120 [40 |40 | .025 20 15 20 To-18 2N2368 360 40 15 20 60 10 1 0.25 0.85 1 10 400 | 4 [10 {12 | 15 0.4 20 300=20 Tol8 2N2369 360 40 15 40 120 lo 1 0.25 0.85 1 10 500 | 4 /13 }12 [18 0.4 20 30020 To-18 2N2369A 360 40 15 40 120 10, 1 0.25 15 _ 3 9 00 | 4 [13 12 J18 30 6220 To-18 2N2478 300 15 6 30 150 . -20 04 04 1 0.66 20 600 | 316 [20,15 | 0.05 5 5 5 To-18 2N2501 360 40 20 50 150 10 1 0.2 0.85 1 10 350 | 4 [15 [ j - To-18 2N2786 - 300 15 6 40 120 10 05 10.26 0.85 0.15 3 1000] 375)919 [0.005 5 5 5 To-18 2N3010 | 300 me) 6 25 125 10 0.4 0.25 0.85 021 1 600] 3 16 {12 ]12 _ ~~ = To-18 AN3013 360 40 15 3% 120. 39 0.4 0.28 1.2 10 100 | 350] 5 |18 15 }25 --.I- > To-18 f . . | ~ 2N3014 360 , 40 20 30 .120 "3 0.4 0.35 1.2 10 100] 350] 5 ]18 |16 |25 -- _ = To-18 - 2N3633 300 3% |; 6 50 150 0 05 0.21 0.85 0.15 3 1300 [2515 ]9 9 j0005 5 5 5 To-18 Water Ate @f athe | : 7 60 Eames Street mo, a Framingham, MA 01701 __ (617) 879-0880-1-2 GENERAL DIODE CORPORATIO?F | ;wy GENERAL DIODE CORP 8b dE ff) 3ae9720 oo00305 0 > 7-279-0, PNP SILICON PLANAR EPITAXIAL LOGIC TRANSISTORS, gs" eS) masse 3 ane oye swith aa - $ % s 6 a @ . \ a ao g oO. TYPE 3 oe \ | % Se\e Se\eel. Qn24it 300 5 20 20 60 1 16 200 01 25 |} To-18 2N2412 300 23 2 40 120 1 10 200 01 25 _ To-18 2n2894 360 2 12. 30 = 1 10 400 08 6 To-18 aN2894A 360 - 12 12 x0 = 1 10 800 05 10 _ om To-18 2N3011 360 30 12 0 = 40 01 To-18 2N3012 360 12: 12 2 = 1 10 400 1 6 75 08 6 _ To-18 2N3208 360 20 20 23 1 30 | -400] 5 90} 08 10 | | To-is 2N3248 - 360 15. 12 80 150 1 10 250] 8 2 0S 10 To-18 2N3249 360 5 12 100 300 1 10 300 | 8 20 05 10 _ = To-18 2N3250 360 - 50 40 s0 .50 1 10 250 1 6 50 02 40 _ = To-18 2N3250A 360 60 60 so 150 1 10 25016 s0 02 40 _ To-18 2N3251 360 50 40 100 300 1 10 300 | 6 350 02 40 _ _ To-18 2N9251A 360 60 60 100 300 1 10 300 1 6 50 62 40 _- _ To-18 . SILICON PLANAR GENERAL PURPOSE TRANSISTORS < . z . - 2S a Si " Q g a\32\3\3\ <\ 3% a Ba Zz a & 4 % - \3\ 2\a\s\ 8B Se\lee 45 a =a I S