MOS FET
Bulletin No.
T03EB0
(Nov., 2000)
Standard Minimum Packaged Quantity
Series
Standard Minimum package Unit
FM20 100
FM100 105
Specify the number of standard minimum
packaged units when placing order.
The information in this publication has been carefully checked and is believed to be
accurate; however, no responsibility is assumed for inaccuracies.
Sanken reserves the right to make changes without further notice to any products herein
in the interest of improvements in the performance, reliability, or manufacturability of its
products. Before placing an order, Sanken advises its customers to obtain the latest
version of the relevant information to verify that the information being relied upon is
current.
Application and operation examples described in this catalog are quoted for the sole
purpose of reference for the use of the products herein and Sanken can assume no
responsibility for any infringement of industrial property rights, intellectual property rights
or any other rights of Sanken or any third party which may result from its use.
When using the products herein, the applicability and suitability of such products for the
intended purpose or object shall be reviewed at the users responsibility.
Although Sanken undertakes to enhance the quality and reliability of its products, the
occurrence of failure and defect of semiconductor products at a certain rate is inevitable.
Users of Sanken products are requested to take, at their own risk, preventative measures
including safety design of the equipment or systems against any possible injury, death,
fires or damages to the society due to device failure or malfunction.
Sanken products listed in this catalog are designed and intended for the use as
components in general purpose electronic equipment or apparatus (home appliances,
office equipment, telecommunication equipment, measuring equipment, etc.).
Before placing an order, the user’s written consent to the specifications is requested.
When considering the use of Sanken products in the applications where higher reliability
is required (transportation equipment and its control systems, traffic signal control
systems or equipment, fire/crime alarm systems, various safety devices, etc.), please
contact your nearest Sanken sales representative to discuss and obtain written
confirmation of your specifications.
The use of Sanken products without the written consent of Sanken in the applications
where extremely high reliability is required (aerospace equipment, nuclear power control
systems, life support systems, etc.) is strictly prohibited.
Anti radioactive ray design is not considered for the products listed herein.
This publication shall not be reproduced in whole or in part without prior written approval
from Sanken.
CAUTION / WARNING
•
•
•
•
•
•
•
•
•
•
Contents
Storage, characteristic inspection, and handling precautions
.. 2
External dimensions.................................................. 3
Avalanche energy capability....................................... 4
Avalanche energy capability measuring method ............ 5
Product index by part number .................................... 6
Selection guide......................................................... 7
Discontinued part guide
2SK1177
......................................... 8
2SK1178
......................................... 9
2SK1179
........................................ 10
........................................ 24
........................................ 25
2SK2419
........................................ 26
2SK2420
........................................ 27
2SK2421
........................................ 28
2SK2701
........................................ 29
2SK2702
........................................ 30
2SK2703
........................................ 31
2SK2704
........................................ 32
2SK2705
........................................ 33
2SK2706
........................................ 34
2SK2707
........................................ 35
2SK2708
........................................ 36
2SK2709
........................................ 37
2SK2710
........................................ 38
2SK2778
........................................ 39
2SK2779
........................................ 40
2SK2803
........................................ 41
........................................ 42
2SK2805
........................................ 43
2SK2848
2SK2943
2SK2945
2SK3002
2SK3003
2SK3004
2SK3199
2SK3200
2SK3332
2SK3460
FKV550T
........................................ 44
........................................ 45
........................................ 46
........................................ 47
........................................ 48
........................................ 49
........................................ 50
........................................ 51
2SJ424
.......................................... 52
2SJ425
.......................................... 53
2SK1180
........................................ 11
2SK1181
........................................ 12
2SK1183
........................................ 13
2SK1184
........................................ 14
2SK1185
........................................ 15
2SK1186
........................................ 16
2SK1187
........................................ 17
2SK1188
........................................ 18
2SK1189
........................................ 19
2SK1190
........................................ 20
2SK1191
........................................ 21
2SK1192
........................................ 22
2SK1712
........................................ 23
Nch
Pch
1
........................................... 54
Inappropriate storage, characteristic inspection, or
handling may impair the reliability of the device. To ensure
high reliability, observe the following precautions:
•It is recommended to store the device at room temper-
ature (between 5 and 35°C) and relative humidity at 40 to
75%. Avoid storing the device in a place where the
temperature or humidity is high or changes greatly.
•Store the device in a clean place that is not exposed to
direct sunlight, and is free from corrosive or harmful
gases.
•If the device is stored for a long time, check the solder-
ability and lead condition before using the device.
•When handling the device, physical grounding is neces-
sary. Wear a wrist strap with a 1 MΩ resistor close to the
body in the wrist strap to prevent electric shock.
•Use a conductive table mat or floor mat at the device
handling workbench and to ensure grounding.
•When using a curve tracer or other measuring equip-
ment, ground the equipment as well.
•When soldering, ground the bit of the soldering iron and
the dip tank to prevent a leakage voltage from damaging
the device.
•Store the device in the shipping container or a conduc-
tive container or use aluminum foil to protect the device
from static electricity.
When carrying out characteristic inspections on re-
ceiving products or other occasions, take care to avoid
applying a surge voltage from the measuring equipment
and check the terminals of the measuring equipment for a
short circuit or wiring errors. Measure the device within the
range of its rated values.
When attaching heatsink, apply a small amount of
silicone evenly to the back of the device and both sides of
the insulator to reduce the thermal resistance between the
device and heatsink.
Recommended silicone grease
•G746 SHINETSU SILICONE CO., LTD.
•YG6260 GE TOSHIBA SILICONE CO., LTD.
•SC102
DOW CORNING TORAY SILICONE CO., LTD.
Please select a silicone grease carefully since the oil in
some grease can penetrate the product, which will
result in an extremely short product life.
If screws are not tightened with sufficient torque, this
can increase the thermal resistance and reduce the
radiation effect. Tightening screws with too great a torque
damage the screw thread, deform the heatsink, or twist the
device frame until it is damaged. There, tighten screws with
a torque as shown below (Table 1).
A large contact area between the device and the
heatsink for effective heat radiation is required. To ensure
a large contact area, minimize mounting holes and select a
heatsink with a sufficiently smooth surface and that is free
from burring or metal debris.
When excessive load is exerted on leads, internal
connections may be break. Load exerted in each of the
following directions should be limited to below 1 kg for
TO-220F and 2.5 kg for TO-3PF.
We make several types of lead forming available, please
consult with our personnel when necessary.
Storage, characteristic inspection, and handling precautions
Table 1: Screw Tightening Torque
Package
0.490 to 0.686 N•m (5 to 7 kgf•cm)
0.686 to 0.822 N•m (7 to 9 kgf•cm)
TO-220F
TO-3PF
Tightening Torque
Directions in which load is exerted on leads
1. Storage precautions
7. Handling precautions to protect power
MOS FET from static damage
2.
Precautions on characteristic inspections
6. Heatsink
8. Load on Leads
9. Lead Forming
4. Screw tightening torque
3. Silicone Grease
2
If soldering is necessary, take care to keep the applica-
tion of heat as brief as possible, and within the following
limits:
260±5ºC for 10 s max
350ºC for 3 s max (soldering iron)
5. Soldering temperature
(Unit: mm)
(17.5)
(13.5)
a
b
GDS
φ3.3±0.2 10.0±0.2
4.0±0.2
8.4±0.2
0.8±0.2
3.9±0.2
1.35±0.15
1.35±0.15
0.85
2.54
2.54
2.2±0.2
0.45 2.4±0.2
4.2±0.2 C0.5
2.8
General product
a: Part Number
b: Lot Number
Weight: Approx 2.0g
Weight: Approx 6.5g
a: Part Number
b: Lot Number
a
b
(16.2)
4.4 1.51.5
φ3.3±0.1 15.6±0.2
23.0±0.3
9.5±0.2
2.15±0.15
5.45±0.1
5.45±0.1
GDS
0.8
0.65 3.35±0.2
3.45±0.2
5.5±0.2
3.0
1.05
1.75±0.15
3.3
1.6 0.8
5.5±0.2
(13.5)
a
b
GDS
φ3.3±0.2 10.0±0.2
4.0±0.2
8.4±0.2
0.8±0.2
3.9±0.2
1.35±0.15
1.35±0.15
0.85
2.54
2.54
2.2±0.2
0.45+0.2
–0.1
+0.2
–0.1 +0.2
–0.1
+0.2
–0.1
2.4±0.2
4.2±0.2 C0.5
2.8
16.9±0.2
FM20 (TO-220F)1
1.6
a
b
3.3
16.2
0.8
4.4 1.51.5
φ3.3±0.2 15.6±0.2
23.0±0.3
5.5±0.2
0.8
9.5±0.2
1.75 ±0.15
2.15 ±0.15
1.05
5.45±0.1
5.45±0.1
GDS
0.65 3.35±0.2
3.45±0.2
5.5±0.2
3.0
FM100 (TO-3PF)
2
3
External dimensions
UL approved product
General product UL approved product
+0.2
–0.1
+0.2
–0.1
+0.2
–0.1 +0.2
–0.1
When a MOS FET is used for high-speed switching, the
inductive load and wiring inductance may cause a counter
electromotive voltage at cutoff that the device cannot
withstand.
Avalanche energy capability is the non-clamped ability
to withstand damage expressed as energy. As long as the
energy applied to the device at cutoff is within the
guaranteed avalanche energy capability, the device will not
be damaged even if the Drain-Source voltage exceeds the
capability.
For example, a Drain-Source voltage that is within the
guaranteed capability when electrically stationary may
exceed the limit at startup or cutoff. Usually, a snubber
circuit or similar surge absorbing circuit is used to keep the
Drain-Source voltage within the guaranteed capability.
Sanken MOS FETs, however, do not require this kind of
protective circuit because the avalanche energy capability
is guaranteed. Sanken MOS FETs enable the number of
parts to be reduced, saving board area.
* Consult the engineering department of Sanken when
planning to use MOS FETs in avalanche mode.
The EAS Value in the specifications is guaranteed when
the channel temperature Tch is 25ºC. Since the EAS Value
drops as the channel temperature rises, derating
depending on the temperature is necessary.
Fig.B shows the derating curve for single avalanche
energy capability. This is the derating curve of EAS and the
channel temperature (Tch (start)) immediately before the
avalanche occurs in the product, with the EAS value
(maximum rating) at 25ºC as 100%.
For example, if the product temperature is 50ºC, the EAS
value is derated to 64% of the value at 25ºC.
1. What is avalanche energy capability ?
If the current in an inductive load L is ILP at the moment
when the MOS FET is cut off, EAS can be expressed as
follows:
If the value of L is not known in an actual circuit, EAS
can also be calculated from the actual voltage and current
waveforms as follows:
The following calculation is used to determine EAS
where the voltage and current shown in Fig.A are applied
to the MOS FET in a circuit.
Integrate the overlapping section of ID and VDS to calcu-
late ∫ID•VDS•dt. When the ID waveform is triangular, EAS
will be as follows:
2. EAS calculation method
3. Temperature derating for EAS
This section explains the derating method for continu-
ous avalanche.
Considering continuous avalanche as the repetition of a
single avalanche, the safe operating area (SOA) is deter-
mined using the derating curve shown in Fig. B.
Calculate the energy and Tch (start) of avalanche in the
worst condition and determine SOA using the calculated
data and the derating curve shown in Fig. B. The tempera-
ture rise due to avalanche should not cause the channel
temperature to exceed the maximum rating.
The following is an example of determining SOA judg-
ment by calculation when a MOS FET enters a transient
avalanche state at power-on then changes to a stationary
state.
Supposing that the waveform is as shown in Fig.C until
the MOS FET changes to the stationary state, calculate the
start loss and switching (turn-on/off) Ioss. To simplify the
calculation, the average loss Pa and the last two wave-
forms are used for approximation. (Fig. D)
First, calculate the channel temperature Tch ( ) at time
( ) where the temperature condition is severest.
If the Tch ( ) value is within the maximum rating, there
is no problem as far as the temperature is concerned.
4. Continuous avalanche energy capability
Fig. A
Fig. B
Avalanche energy capability of MOS FET
EAS = • L • ILp2 •VDSS
VDSS – VDD
1
2
EAS =
•10(A) • 550(V) • 10(µs) = 27.5(mJ)
* VDD: Supply voltage
EAS = Ps•t
* Ps: Surge power * t: Surge time
0
0
ID
VDS
10A
550V
(VDSS)
10µs
100
80
60
40
20
025 50 75 100 125 150
Tch (start) (ºC)
EAS (normalized) (%)
EAS — Tch (start)
4
Sanken MOS FETs feature guaranteed
avalanche energy capability.
1
2
............................................................
...........................
1
2
ILp = ID max
Then calculate the channel temperature Tch ( 1) imme-
diately before avalanche.
This Tch ( 1) value becomes Tch (start). If the avalanche
energy (EAS = P6•t6) is within the value derated from the
guaranteed EAS value at the temperature, there is no
problem as far as the avalanche energy is concerned.
Fig. DFig. C
Fig. 1
Fig. 2
Fig. 3
Nch
Pch
Switching time measuring method
Avalanche energy capability measuring method
Tch ( ) = Ta + Pa • rch-c (Tn + T + t1 + t2 + t3)
+ (P1 – Pa) • rch-c (T + t1 + t2 + t3)
– (P1 – P2) • rch-c (T + t2 + t3)
+ (P3 – P2) • rch-c (T + t3)
– P3 • rch-c (T) + P4 • rch-c (t4 + t5 + t6)
– (P4 – P5) • rch-c (t5 + t6)
+ (P6 – P5) • rch-c (t6)
* Ta : Ambient temperature
r
ch-c (t): Transient thermal resistance at pulse width t
V
0V
GS RG
VDS
VDD
IL
L
IL
ILp
VDS
VDD
V(BR) DSS
V
0V
GS
RG
VDS
VDD
ID
RL
(a) Measuring circuit (b) Output waveform
(a) Measuring circuit
P.W. 10µs
=
Duty cycle 1%
VGS
VDS
90%
10%
90%
10%
t
d(on)
ton
t
d(off)
trtoff
tf
V
0V
GS
P.W. 10µs
=
Duty cycle < 1%
RG
VDS
VDD
ID
RL
VGS
VDS
(b) Input-output waveform
90%
10%
90%
10%
t
d(on)
ton
t
d(off)
trtoff
tf
0
Transient Stationary
Avalanche in this section
ID
VDS
T(n)
T(n)
0Pa
P1P2
P3
P4
T
P5
P6
t1t2t3t4t5t6
T' 1
P2
t2
5
EAS = • L • ILp2 •V(BR) DSS
V(BR) DSS – VDD
1
2
3
......................................
Tch ( 1) = Ta + Pa • rch-c (Tn + T' + t1 + t2 + t3)
+ (P1 – Pa) • rch-c (T' + t1 + t2 + t3)
– (P1 – P2) • rch-c (T '+ t2 + t3)
+ (P3 – P2) • rch-c (T' + t3)
– P3 • rch-c (T') + P4 • rch-c (t4 + t5 + t6)
– (P4 – P5) • rch-c (t5 + t6)
+ (P6 – P5) • rch-c (t6)4
......................................
2SK1177 500 2.5 30 200 3.0 350 FM20 8
2SK1178 500 4.0 35 260 1.5 610 FM20 9
2SK1179 500 8.5 85 400 0.85 1300 FM100 10
2SK1180 500 10 85 500 0.6 1800 FM100 11
2SK1181 500 13 85 660 0.4 2700 FM100 12
2SK1183 200 3 25 36 1.5 140 FM20 13
2SK1184 200 5 30 67 0.8 260 FM20 14
2SK1185 100 5 25 16 0.54 180 FM20 15
2SK1186 100 9 30 32 0.27 350 FM20 16
2SK1187 100 12 35 58 0.16 650 FM20 17
2SK1188 60 10 25 2.1 0.2 300 FM20 18
2SK1189 60 15 30 6.2 0.1 640 FM20 19
2SK1190 60 22 35 17 0.05 1300 FM20 20
2SK1191 60 30 40 38 0.028 2500 FM20 21
2SK1192 60 40 90 38 0.028 2500 FM100 22
2SK1712 60 15 30 6.2 0.1 820 FM20 23
2SK2419 60 25 35 26 0.037 1300 FM20 24
2SK2420 60 30 40 38 0.028 2200 FM20 25
2SK2421 60 40 40 60 0.02 2400 FM20 26
2SK2701 450 7 35 130 1.1 720 FM20 27
2SK2702 450 10 35 300 0.8 1000 FM20 28
2SK2703 450 10 75 300 0.8 1000 FM100 29
2SK2704 450 13 40 400 0.57 1300 FM20 30
2SK2705 450 13 75 400 0.57 1300 FM100 31
2SK2706 450 18 85 700 0.3 2500 FM100 32
2SK2707 600 4.5 35 50 1.85 560 FM20 33
2SK2708 600 7 40 150
85 300
1.1 950 FM20 34
2SK2709 600 8.5 0.85 1200 FM100 35
2SK2710 600 12 85 400 0.55 1900 FM100 36
2SK2778 100 12 30 70 0.175 740 FM20 37
2SK2779 100 20 35 200
30 30
0.08 1630 FM20 38
2SK2803 450 3 2.8 340 FM20 39
80 550
2SK2805 450 15 0.38 2100 FM100 40
2SK2848 600 2 30 10 3.8 290 FM20 41
2SJ424 –60 5 25 —0.5 270 FM20 52
2SJ425 –60 8 30 —0.28 580 FM20 53
2SK2943 900 3 30 60 5.0 600 FM20 42
2SK2945 900 5 35 120 3.0 880 FM20 43
2SK3002 200 8 30 55 0.35 450 FM20 44
2SK3003 200 18 35 120 0.175 850 FM20 45
2SK3004 250 18 35 120 0.25 850 FM20 46
2SK3199 500 5 30 35 1.5 650 FM20 47
2SK3200 500 10 35 50 1.1 920 FM20 48
2SK3332 150 12 30 100 0.2 870 FM20 49
2SK3460 150 18 35 180 0.095 1900 FM20 50
FKV550T 50 50 35 150 0.013 2700 FM20 51
6
Product index by part number
Parameter
Part Number
Absolute maximum ratings
Electrical Characteristics (Ta=25ºC)
VDSS IDEAS Package Page
PD
(Tc=25ºC) RDS(ON) max
(VGS=10V
)
Ciss
(typ)
(V) (A) (W) (mJ) (Ω) (pF)
✽
✽
✽
✽
✽
✽
✽
✽
✽
✽
✽
✽ : Under development
: UL recognized parts are available (File No. 117753). Each UL recognized parts is marked with a I , following its product number.
2SK1188
60
10 0.2 FM20 18
FKV550T
50 50 13m
Ω
FM20 51
19
23
20
24
21
25
22
26
15
16
17
37
38
13
14
39
27
28
29
30
31
40
32
8
9
10
11
12
41
33
34
35
36
42
43
2SK1189
15 0.1 FM20
2SK1712
15 0.1 FM20
2SK1190
22 50m
Ω
FM20
2SK2419
25 37m
Ω
FM20
2SK1191
30 28m
Ω
FM20
2SK2420
30 28m
Ω
FM20
2SK1192
40 28m
Ω
FM100
2SK2421
40 20m
Ω
FM20
2SK1185
100
5 0.54 FM20
2SK1186
9 0.27 FM20
2SK1187
12 0.16 FM20
2SK2778
12 0.175 FM20
2SK2779
20 80m
Ω
FM20
2SK1183
200
3 1.5 FM20
2SK1184
5 0.8 FM20
44
2SK3002
8 0.35 FM20
45
2SK3003
18 0.175 FM20
49
50
2SK3332
150 12 0.2 FM20
2SK3460
18 0.095 FM20
2SK2803
450
3 2.8 FM20
46
2SK3004
250 18 0.25 FM20
2SK2701
7 1.1 FM20
2SK2702
10 0.8 FM20
2SK2703
10 0.8 FM100
2SK2704
13 0.57 FM20
2SK2705
13 0.57 FM100
2SK2805
15 0.38 FM100
2SK2706
18 0.3 FM100
2SK1177
500
2.5 3 FM20
2SK1178
4 1.5 FM20
2SK1179
8.5 0.85 FM100
47
2SK3199
5 1.5 FM20
2SK1180
10 0.6 FM100
2SK1181
13 0.4 FM100
48
2SK3200
10 1.1 FM20
2SK2848
600
2 3.8 FM20
2SK2707
4.5 1.85 FM20
2SK2708
7 1.1 FM20
2SK2709
8.5 0.85 FM100
2SK2710
12 0.55 FM100
2SK2943
900 3 5.0 FM20
2SK2945
5 3.0 FM20
★: Logic drive
●Nch MOS FET
2SJ424
–60 5 0.5 FM20 52
53
2SJ425
8 0.28 FM20
●Pch MOS FET
7
Selection Guide
VDSS
(V) ID
(A) PackagePart Number Page
RDS(ON)
(Ω) max VDSS
(V) ID
(A) PackagePart Number Page
RDS(ON)
(Ω) max
★
★
★
★
★
8
2SK1177
Electrical Characteristics
V(BR) DSS 500 V ID = 250µA, VGS = 0V
IGSS ±500 nA VGS = ±20V
IDSS 250 µAV
DS = 500V, VGS = 0V
(Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 250µA
Re (yfs) 1.5 2.3 S VDS = 10V, ID = 1.4A
RDS (on) 2.6 3.0 ΩVGS = 10V, ID = 1.4A
Ciss 350 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 1.4A, VDD = 250V,
VGS = 10V,
See Figure 2 on Page 5.
Coss 54 pF
ton 50 ns
toff 140 ns
Symbol Unit Conditions
Ratings
typ maxmin
01020
3.0
2.0
1.0
0
5.5V
5V
V 10V
GS =
0
01.0 2.0 3.0
1
2
3
4
5
–50
00 50 100 150
1
2
3
4
5
6
2
1.0
520
0
2.0
3.0 V 10V
DS =
25ºC
125ºC
0.05
0.3 0.1 0.5 1 5
0.5
1
5
10 V 10V
DS =
25ºC
125ºC
0
10
10 20 30 40 50
50
100
500
1000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
3
0.03 5 10 50 100 500 1000
0.1
0.5
1
5
10
20 (Tc=25ºC)
ID (pulse) max
D
I max
1ms
100µs
DC OPERATION
RDS (ON)
0
10
20
30
0 50 100 150
00 0.5 1.0 1.5
1.0
2.0
3.0
V 0V
GS =
5V,10V
0246810
0
4
6
8
10
I 1.5A
D=
V 10V
GS =
I 1.5A
D=
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
T 55ºC
C=–
T 55ºC
C=–
LIMITED
With infinite heatsink
Without heatsink
V 4.5V
GS =
10V
2
10
I 2.5A
D=
5
External dimensions 1......FM20
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance – VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID –VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
Absolute Maximum Ratings
Symbol Ratings Unit
VDSS 500 V
VGSS ±20 V
ID±2.5 A
ID (pulse) ±10 (Tch 150ºC)
(Ta = 25ºC)
A
PD30 (Tc = 25ºC) W
EAS 200 mJ
Tch 150
*: VDD = 50V, L = 60mH, IL = 2.5A, unclamped,
See Figure 1 on Page 5.
ºC
Tstg –55 to +150 ºC
*
2SK1178
9
Absolute Maximum Ratings Electrical Characteristics
External dimensions 1 ...... FM20
Symbol Ratings Unit
VDSS 500 V(BR) DSS 500 V ID = 250µA, VGS = 0VV
VGSS ±20 IGSS ±500 nA VGS = ±20VV
ID±4.0 IDSS 250 µAV
DS = 500V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 250µAA
PD35 (Tc = 25ºC) Re (yfs) 2.4 3.7 S VDS = 10V, ID = 2.0AW
EAS 260 RDS (on) 1.3 1.5 ΩVGS = 10V, ID = 2.0AmJ
Tch 150
*: VDD = 50V, L = 28mH, IL = 4.0A, unclamped,
See Figure 1 on Page 5.
Ciss 610 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 2.0A, VDD = 250V,
VGS = 10V,
See Figure 2 on Page 5.
ºC
Tstg –55 to +150 Coss 91 pFºC
ton 50 ns
toff 120 ns
Symbol Unit Conditions
Ratings
typ maxmin
*
01020
5
3
1
0
6V 5.5V
5V
V 10V
GS =
0
012 4
0.5
1.0
1.5
2.0
–50
00 50 100 150
1
2
4
5
2
1
510
0
2
5V 10V
DS =
25ºC
125ºC
0.05
0.3 0.1 0.5 1 5
0.5
1
5
10 V 10V
DS =
25ºC
125ºC
0
10 10 20 30 40 50
50
100
500
1000
3000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
3
0.05 5 10 50 100 500 1000
0.1
0.5
1
5
10
50
ID (pulse) max
D
I max
100µs
DC OPERATION
1ms (1shot)
0
10
20
30
40
0 50 100 150
00 0.5 1.5
1
2
5
V 0V
GS =
5V,10V
0246810
0
4
6
8
10
I 4A
D=
I 2A
D=
V 10V
GS =
I 2A
D=
T 55ºC
C=–
T 55ºC
C=–
LIMITED
V 4.5V
GS =
10V
2
4
3
4
3
3
2
20
3
4
1.0
With infinite heatsink
±16 (Tch 150ºC)
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
–
VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
R
DS (ON)
Without heatsink
10
2SK1179
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 500 V(BR) DSS 500 V ID = 250µA, VGS = 0VV
VGSS ±20 IGSS ±500 nA VGS = ±20VV
ID±8.5 IDSS 250 µAV
DS = 500V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 250µAA
PD85 (Tc = 25ºC) Re (yfs) 5.1 7.7 S VDS = 10V, ID = 4.5AW
EAS 400 RDS (on) 0.70 0.85 ΩVGS = 10V, ID = 4.5AmJ
Tch 150
*: VDD = 50V, L = 10mH, IL = 8.5A, unclamped,
See Figure 1 on Page 5.
Ciss 1300 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 4.5A, VDD = 250V,
VGS = 10V,
See Figure 2 on Page 5.
ºC
Tstg –55 to +150 Coss 180 pFºC
ton 60 ns
toff 110 ns
Symbol Unit Conditions
Ratings
typ maxmin
*
01020
10
4
2
0
V 4.5V
GS =
5.5V
5V
V 10V
GS =
0
012 10
0.5
1.0
1.5
–50
0050100
150
0.5
1.0
1.5
2.0
2
2
51020
0
4
10 V 10V
DS =
25ºC
125ºC
0.05
0.3 0.1 0.5 1 10
0.5
1
10
20 V 10V
DS =
25ºC
125ºC
0
20 10 20 30 40 50
50
100
500
1000
5000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
3
0.03 5 10 50 100 500 1000
0.1
0.5
1
5
10
50
I
D
(pulse) max
D
I max
100µs
DC OPERATION
1ms (1shot)
R
DS (ON)
0
20
50
80
90
0 50 100 150
00 0.2 0.4 0.6 1.0 1.4
4
8
10
V 0V
GS =
5V,10V
0246810
0
2
4
6
10
I 8.5A
D=
V 10V
GS =
I 4.5A
D=
T 55ºC
C=–
T 55ºC
C=–
LIMITED
With infinite heatsink
Without heatsink
6
810V
515
6
8
3456789
5
5
8
I 4.5A
D=
70
60
40
10
30
0.8 1.2
6
2
External dimensions 2 ...... FM100
±34 (Tch 150ºC)
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance – VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
11
2SK1180
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 500 V(BR) DSS 500 V ID = 250µA, VGS = 0VV
VGSS ±20 IGSS ±500 nA VGS = ±20VV
ID±10 IDSS 250 µAV
DS = 500V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 250µAA
PD85 (Tc = 25ºC) Re (yfs) 6.1 9.2 S VDS = 10V, ID = 5.0AW
EAS 500 RDS (on) 0.5 0.6 ΩVGS = 10V, ID = 5.0AmJ
Tch 150
*: VDD = 50V, L = 9mH, IL = 10A, unclamped,
See Figure 1 on Page 5.
Ciss 1800 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 5A, VDD = 250V,
VGS = 10V,
See Figure 2 on Page 5.
ºC
Tstg –55 to +150 Coss 250 pFºC
ton 60 ns
toff 140 ns
Symbol Unit Conditions
Ratings
typ maxmin
*
0
20
50
80
90
0 50 100 150
With infinite heatsink
Without heatsink
70
60
40
10
30
01020
10
8
4
0V 4V
GS =
10V
5V
4.5V
V 10V
GS =
0
01710
0.2
0.4
0.6
0.8
1.0
–50
0050100
150
0.2
0.6
0.8
1.0
1.2
1.4
251020
V 10V
DS =
25ºC
125ºC
0.05
0.3 0.1 0.5 1 10
0.5
1
10
20 V 10V
DS =
25ºC
125ºC
0
30 10 20 30 40 50
50
100
500
1000
5000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
5 10 50 100 500 1000
0.1
0.5
1
5
10
70
D
I max
100µs
DC OPERATION
R
DS (ON)
00 0.5 1.5
2
8
10
V 0V
GS =
5V,10V
0246810
0
4
6
8
10
I 10A
D=
I 5A
D=
V 10V
GS =
I 5A
D=
T 55ºC
C=–
T 55ºC
C=–
LIMITED
2
6
515
10
8
4
0
2
6
23456 89
0.4
2
5
5
6
4
1.0
1ms (1shot)
ID (pulse) max
External dimensions 2 ...... FM100
±40 (Tch 150ºC)
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
12
2SK1181
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 500 V(BR) DSS 500 V ID = 250µA, VGS = 0VV
VGSS ±20 IGSS ±500 nA VGS = ±20VV
ID±13 IDSS 250 µAV
DS = 500V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 250µAA
PD85 (Tc = 25ºC) Re (yfs) 8.5 13 S VDS = 10V, ID = 6.5AW
EAS 660 RDS (on) 0.35 0.4 ΩVGS = 10V, ID = 6.5AmJ
Tch 150
*: VDD = 50V, L = 7mH, IL = 13A, unclamped,
See Figure 1 on Page 5.
Ciss 2700 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 6.5A, VDD = 250V,
VGS = 10V,
See Figure 2 on Page 5.
ºC
Tstg –55 to +150 Coss 350 pFºC
ton 65 ns
toff 180 ns
Symbol Unit Conditions
Ratings
typ maxmin
*
01020
12
10
2
0
10V
5V
4.5V
V 10V
GS =
0
028
0.1
0.2
0.3
0.4
0.5
–50
0050100
150
0.2
0.4
0.6
0.8
1.0
2 5 10 20
0
12
14 V 10V
DS =
25ºC
125ºC
0.05
0.3 0.1 0.5 1 20
0.5
5
10
20 V 10V
DS =
25ºC
125ºC
0 1020304050
50
100
1000
5000
10000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
1 5 10 50 100 500 1000
0.1
0.5
1
5
50
100 D
ID (pulse) max
100µs
DC OPERATION
RDS (ON)
00 0.5 1.0 1.5
6
12
14
V 0V
GS =
5V,10V
0246810
0
2
6
8
10
I 13A
D=
I 8.5A
D=
V 10V
GS =
I 6.5A
D=
T 55ºC
C=–
T 55ºC
C=–
LIMITED
0
20
50
80
90
0 50 100 150
With infinite heatsink
Without heatsink
70
60
40
10
30
4
6
8
V 4V
GS =
515
10
8
6
4
2
4 6 10 12
4
1
510
500
10
8
2
4
D
I max
1ms (1shot)
10
External dimensions 2 ...... FM100
±52 (Tch 150ºC)
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
13
2SK1183
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 200 V(BR) DSS 200 V ID = 250µA, VGS = 0VV
VGSS ±20 IGSS ±500 nA VGS = ±20VV
ID ±3I
DSS 250 µAV
DS = 200V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 250µAA
PD 25 (Tc = 25ºC) Re (yfs) 0.8 1.2 S VDS = 10V, ID = 1.5AW
EAS 30 RDS (on) 1.2 1.5 ΩVGS = 10V, ID = 1.5AmJ
Tch 150
*: VDD = 50V, L = 6mH, IL = 3.0A, unclamped,
See Figure 1 on Page 5.
Ciss 140 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 1.5A, VDD = 100V,
VGS = 10V,
See Figure 2 on Page 5.
ºC
Tstg –55 to +150 Coss 42 pFºC
ton 35 ns
toff 50 ns
Symbol Unit Conditions
Ratings
typ maxmin
*
0
10
20
25
0 50 100 150
With infinite heatsink
Without heatsink
V 4.5V
GS =
6V
5.5V
5V
V 10V
GS =
0
01.0 2.0 3.0
1.0
2.0
–50
00 50 100 150
1
4
51020
V 10V
DS =
25ºC
125ºC
0.05
0.3 0.1 0.5 1 5
0.5
1
10 V 10V
DS =
25ºC
125ºC
0
310 20 30 40 50
5
10
50
100
500 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
3
0.03 5 10 50 100 500
0.1
0.5
1
5
10
20 ID (pulse) max
D
I max
1ms
100µs
DC OPERATION
10ms (1shot)
00 0.2 0.6 1.0 1.4
1.0
2.0
3.0
V 0V
GS =
5V
0246810
0
2
4
6
8
I 3A
D=
I 1.5A
D=
V 10V
GS =
I 1.5A
D=
T 55ºC
C=–
T 55ºC
C=–
LIMITED
10V
06
3.0
2.0
1.0
01024 8
3.0
2.0
1.0
0
3
2
5
1.20.4 0.8
10V
0.05
External dimensions 1 ...... FM20
±12 (Tch 150ºC)
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
R
DS (ON)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
14
2SK1184
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 200 V(BR) DSS 200 V ID = 250µA, VGS = 0VV
VGSS ±20 IGSS ±500 nA VGS = ±20VV
ID ±5I
DSS 250 µAV
DS = 200V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 250µAA
PD 30 (Tc = 25ºC) Re (yfs) 1.3 2.5 S VDS = 10V, ID = 2.5AW
EAS 67 RDS (on) 0.5 0.8 ΩVGS = 10V, ID = 2.5AmJ
Tch 150
*: VDD = 50V, L = 4mH, IL = 5.0A, unclamped,
See Figure 1 on Page 5.
Ciss 260 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 2.5A, VDD = 100V,
VGS = 10V,
See Figure 2 on Page 5.
ºC
Tstg –55 to +150 Coss 100 pFºC
ton 50 ns
toff 60 ns
Symbol Unit Conditions
Ratings
typ maxmin
*
02 10
V 4.5V
GS =
6V
5.5V
5V
10V V 10V
GS =
0
0
0.8
1.0
–50
0050100
150
1.0
2.0
51020
V 10V
DS =
0.05
0.3 0.1 0.5 1 10
0.5
1
10 V 10V
DS =
25ºC
125ºC
0
510 20 30 40 50
50
100
500
1000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
3
0.03 5 10 50 100 500
0.1
0.5
1
5
10
50 ID (pulse) max
D
I max
1ms
100µs
DC OPERATION
10ms (1shot)
00 0.2 0.4 1.4
1
5
V 0V
GS =
5V
0246810
0
2
4
6
8
I 5A
D=
I 2.5A
D=
V 10V
GS =
I 2.5A
D=
T 55ºC
C=–
LIMITED
0
10
20
30
0 50 100 150
With infinite heatsink
Without heatsink
5
3
2
0
1
4
468
5
3
2
0
1
4
25ºC
125ºC
T 55ºC
C=–
0.6
0.4
0.2
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
10
2
4
3
0.6 0.8 1.0 1.2
10V
5
5
0.05
RDS (ON)
External dimensions 1 ...... FM20
±20 (Tch 150ºC)
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
15
2SK1185
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 100 V(BR) DSS 100 V ID = 250µA, VGS = 0VV
VGSS ±20 IGSS ±500 nA VGS = ±20VV
ID ±5I
DSS 250 µAV
DS = 100V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 250µAA
PD25 (Tc = 25ºC) Re (yfs) 1.5 1.7 S VDS = 10V, ID = 2.5AW
EAS 16 RDS (on) 0.41 0.54 ΩVGS = 10V, ID = 2.5AmJ
Tch 150
*: VDD = 25V, L = 1mH, IL = 5.0A, unclamped,
See Figure 1 on Page 5.
Ciss 180 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 2.5A, VDD = 50V,
VGS = 10V,
See Figure 2 on Page 5.
ºC
Tstg –55 to +150 Coss 82 pFºC
ton 40 ns
toff 40 ns
Symbol Unit Conditions
Ratings
typ maxmin
*
02
V 4.5V
GS =
5.5V
5V
V 10V
GS =
0
00.5 3.5 5.0
0.8
1.0
–50
00 50 100 150
0.2
0.4
0.6
0.8
1.0
1.2
51020
V 10V
DS =
25ºC
125ºC
0.05
0.3 0.1 0.5 1 10
0.5
1
10 V 10V
DS =
25ºC
125ºC
0
510 20 30 40 50
50
100
500
1000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
0.5 1 5 10 50 100
0.1
0.5
1
5
10
50
ID (pulse) max
D
I max
1ms
100µs
DC OPERATION
10ms (1shot)
R
DS (ON)
00 0.2 0.4 0.6 1.0 1.4
1
2
5
V 0V
GS =
10V
0246810
0
2
4
6
I 5A
D=
I 2.5A
D=
V 10V
GS =
I 2.5A
D=
T 55ºC
C=–
T 55ºC
C=–
LIMITED
0
10
20
25
0 50 100 150
With infinite heatsink
Without heatsink
5
2
1
0
3
46.5V
6V
10V
10468
5
2
1
0
3
4
0.6
0.4
0.2
1.0 1.5 2.0 2.5 3.0 4.0 4.5
5
5
10
4
3
0.8 1.2
5V
External dimensions 1 ...... FM20
±20 (Tch 150ºC)
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
16
2SK1186
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 100 V(BR) DSS 100 V ID = 250µA, VGS = 0VV
VGSS ±20 IGSS ±500 nA VGS = ±20VV
ID ±9I
DSS 250 µAV
DS = 100V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 250µAA
PD30 (Tc = 25ºC) Re (yfs) 2.4 3.7 S VDS = 10V, ID = 4.5AW
EAS 32 RDS (on) 0.24 0.27 ΩVGS = 10V, ID = 4.5AmJ
Tch 150
*: VDD = 25V, L = 600µH, IL = 9.0A, unclamped,
See Figure 1 on Page 5.
Ciss 350 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 4.5A, VDD = 50V,
VGS = 10V,
See Figure 2 on Page 5.
ºC
Tstg –55 to +150 Coss 130 pFºC
ton 60 ns
toff 40 ns
Symbol Unit Conditions
Ratings
typ maxmin
*
02 10
10
6
4
0V 4.5V
GS =
6.5V
6V
5.5V
5V
V 10V
GS =
0
01610
0.1
0.2
0.3
0.4
–50
0050100
150
0.1
0.2
0.3
0.4
0.5
51020
V 10V
DS =
25ºC
125ºC
0.05
0.3 0.1 0.5 1 10
0.5
1
10 V 10V
DS =
25ºC
125ºC
0
10 10 20 30 40 50
50
100
500
1000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
0.5 5 10 50 100
0.1
0.5
1
5
10
50
D
ID (pulse) max
D
I max
1ms
100µs
DC OPERATION
10ms (1shot)
RDS (ON)
00 0.2 0.4 0.6 0.8 1.4
2
4
10
V 0V
GS =
5V
0246810
0
2
4
6
I 9A
D=
I 4.5A
D=
V 10V
GS =
I 4.5A
D=
T 55ºC
C=–
T 55ºC
C=–
LIMITED
0
10
20
30
0 50 100 150
With infinite heatsink
Without heatsink
2
8
468
10V
10
6
4
0
2
8
2345 789
5
5
6
8
1.0 1.2
10V
1
External dimensions 1 ...... FM20
±36 (Tch 150ºC)
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
17
2SK1187
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 100 V(BR) DSS 100 V ID = 250µA, VGS = 0VV
VGSS ±20 IGSS ±500 nA VGS = ±20VV
ID±12 IDSS 250 µAV
DS = 100V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 250µAA
PD35 (Tc = 25ºC) Re (yfs) 4.4 6.5 S VDS = 10V, ID = 6.0AW
EAS 58 RDS (on) 0.12 0.16 ΩVGS = 10V, ID = 6.0AmJ
Tch 150
*: VDD = 25V, L = 600µH, IL = 12A, unclamped,
See Figure 1 on Page 5.
Ciss 650 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 6A, VDD = 50V,
VGS = 10V ,
See Figure 2 on Page 5.
ºC
Tstg –55 to +150 Coss 240 pFºC
ton 70 ns
toff 55 ns
Symbol Unit Conditions
Ratings
typ maxmin
*
02 10
12
4
2
0V 4V
GS =
5.5V
5V
4.5V
V 10V
GS =
0
02812
0.1
0.2
–50
00 50 100 150
0.2
0.3
0.4
6
51020
0
8
10
V 10V
DS =
25ºC
125ºC
0.05
0.3 0.1 1 20
0.5
1
20 V 10V
DS =
25ºC
125ºC
0
20 10 20 30 40 50
50
100
500
1000
3000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
0.5 5 10 50 100
0.1
0.5
1
5
10
50
ID (pulse) max
D
I max
1ms
100µs
DC OPERATION
10ms (1shot)
RDS (ON)
00 0.2 0.4 0.6 0.8 1.4
2
4
12
V 0V
GS =
10V
0246810
0
2
4
6
I 12A
D=
I 6A
D=
V 10V
GS =
I 6A
D=
T 55ºC
C=–
T 55ºC
C=–
LIMITED
0
10
20
30
35
0 50 100 150
With infinite heatsink
Without heatsink
10
8
6
468
10V 12
4
2
46 10
0.1
10
5
0.5 5 10
8
6
10
1.0 1.2
5V
1
External dimensions 1 ...... FM20
±48 (Tch 150ºC)
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
18
2SK1188
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 60 V(BR) DSS 60 V ID = 250µA, VGS = 0VV
VGSS ±20 IGSS ±500 nA VGS = ±20VV
ID±10 IDSS 250 µAV
DS = 60V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 250µAA
PD25 (Tc = 25ºC) Re (yfs) 2.2 3.3 S VDS = 10V, ID = 5.0AW
EAS 2.1 RDS (on) 0.15 0.2 ΩVGS = 10V, ID = 5.0AmJ
Tch 150
*: VDD = 25V, L = 50µH, IL = 7.0A, unclamped,
See Figure 1 on Page 5.
Ciss 300 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 5A, VDD = 30V,
VGS = 10V ,
See Figure 2 on Page 5.
ºC
Tstg –55 to +150 Coss 160 pFºC
ton 35 ns
toff 35 ns
Symbol Unit Conditions
Ratings
typ maxmin
*
035
V 4V
GS =
5V
10V V 10V
GS =
0
01710
0.1
0.2
0.3
–50
0050100
150
0.1
0.2
0.3
0.4
51020
V 10V
DS =
25ºC
125ºC
0.05
0.3 0.1 0.5 1 10
0.5
1
10 V 10V
DS =
25ºC
125ºC
0
10 10 20 30 40 50
50
100
500
1000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
0 0.2 0.4 0.6 0.8 1.4
V 0V
GS =
5V
0246810
0
2
4
6
I 5A
D=
I 10A
D=
V 10V
GS =
I 5A
D=
T 55ºC
C=–
T 55ºC
C=–
0.5 1 5 10 50 100
0.5
1
5
10
50 ID (pulse) max
D
I max
1ms
100µs
DC OPERATION
10ms (1shot)
R
DS (ON)
LIMITED
0.1 0
10
20
25
0 50 100 150
With infinite heatsink
Without heatsink
6V
7V
124 23456 89
5
5
10
4
2
0
8
6
1.0 1.2
10V
10
4
2
0
8
6
10
4
2
0
8
6
External dimensions 1 ...... FM20
±40 (Tch 150ºC)
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
19
2SK1189
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 60 V(BR) DSS 60 V ID = 250µA, VGS = 0VV
VGSS ±20 IGSS ±500 nA VGS = ±20VV
ID±15 IDSS 250 µAV
DS = 60V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 250µAA
PD30 (Tc = 25ºC) Re (yfs) 4.2 6.2 S VDS = 10V, ID = 8.0AW
EAS 6.2 RDS (on) 0.07 0.1 ΩVGS = 10V, ID = 8.0AmJ
Tch 150
*: VDD = 25V, L = 50µH, IL = 12A, unclamped,
See Figure 1 on Page 5.
Ciss 640 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 8A, VDD = 30V,
VGS = 10V ,
See Figure 2 on Page 5.
ºC
Tstg –55 to +150 Coss 350 pFºC
ton 110 ns
toff 45 ns
Symbol Unit Conditions
Ratings
typ maxmin
*
01 5
V 5V
GS =
6V
5.5V
V 10V
GS =
0
021216
0.08
0.10
–50
0050100
150
0.12
0.14
51020
V 10V
DS =
25ºC
125ºC
0.05
0.3 0.1 1 20
0.5
5
10
20 V 10V
DS =
25ºC
125ºC
0
20 10 20 30 40 50
50
100
500
1000
3000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
00 0.2 0.4 0.8 1.0 1.4
2
4
V 0V
GS =
5V
0246810
0
1
2
3
I 8A
D=
I 15A
D=
V 10V
GS =
I 8A
D=
T 55ºC
C=–
T 55ºC
C=–
0.30.5 1 5 10 50 100
0.5
5
10
50
100 ID (pulse) max
D
I max
1ms
100µs
DC OPERATION
R
DS (ON)
LIMITED
1
0
10
20
30
0 50 100 150
With infinite heatsink
Without heatsink
16
4
2
0
6
8
10
12
14
234
16
4
2
0
6
8
10
12
14
10V 7V
0.06
0.04
0.02
46810 14
0.10
0.08
0.06
0.04
0.02
1
0.5 5 10
6
8
10
12
14
0.6 1.2
10V
External dimensions 1 ...... FM20
±60 (Tch 150ºC)
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
20
2SK1190
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 60 V(BR) DSS 60 V ID = 250µA, VGS = 0VV
VGSS ±20 IGSS ±500 nA VGS = ±20VV
ID±22 IDSS 250 µAV
DS = 60V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 250µAA
PD35 (Tc = 25ºC) Re (yfs) 7.3 11 S VDS = 10V, ID = 12AW
EAS 17 RDS (on) 0.04 0.05 ΩVGS = 10V, ID = 12AmJ
Tch 150
*: VDD = 25V, L = 50µH, IL = 20A, unclamped,
See Figure 1 on Page 5.
Ciss 1300 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 12A, VDD = 30V,
VGS = 10V ,
See Figure 2 on Page 5.
ºC
Tstg –55 to +150 Coss 650 pFºC
ton 130 ns
toff 60 ns
Symbol Unit Conditions
Ratings
typ maxmin
*
035
V 4.5V
GS =
5.5V
5V
10V V 10V
GS =
0
010 20 24
10
20
30
40
50
–50
0050100
150
20
40
60
80
31020
V 10V
DS =
25ºC
125ºC
0.05
0.3 0.1 0.5 1 50
0.5
1
50 V 10V
DS =
25ºC
125ºC
0 1020304050
50
100
500
1000
5000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
00 0.2 0.6 0.8 1.4
10
24
V 0V
GS =
5V
0246810
0
1
2
3
4
I 22A
D=
I 12A
D=
V 10V
GS =
I 12A
D=
T 55ºC
C=–
T 55ºC
C=–
0.5
0.5 150100
1
5
10
100 ID (pulse) max
D
I max
1ms
100µs
DC OPERATION
10ms (1shot)
LIMITED
105
50
0
10
20
30
35
0 50 100 150
With infinite heatsink
Without heatsink
24
10
0
20
12 4
24
10
0
20
5
10
5
510
20
0.4 1.0 1.2
10V
External dimensions 1 ...... FM20
±88 (Tch 150ºC)
(Tc=25ºC)
RDS(ON) (mΩ) RDS(ON) (mΩ)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
RDS (ON)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
21
2SK1191
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 60 V(BR) DSS 60 V ID = 250µA, VGS = 0VV
VGSS ±20 IGSS ±500 nA VGS = ±20VV
ID±30 IDSS 250 µAV
DS = 60V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 250µAA
PD40 (Tc = 25ºC) Re (yfs) 13 20 S VDS = 10V, ID = 15AW
EAS 38 RDS (on) 0.021 0.028 ΩVGS = 10V, ID = 15AmJ
Tch 150
*: VDD = 25V, L = 50µH, IL = 30A, unclamped,
See Figure 1 on Page 5.
Ciss 2500 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 15A, VDD = 30V,
VGS = 10V ,
See Figure 2 on Page 5.
ºC
Tstg –55 to +150 Coss 1200 pFºC
ton 180 ns
toff 120 ns
Symbol Unit Conditions
Ratings
typ maxmin
*
01 5
30
20
10
0
V 4.5V
GS =
5.5V
5V
10V V 10V
GS =
0
010 20 30
10
20
30
40
–50
0050100
150
10
20
30
40
10
51020
0
20
30 V 10V
DS =
25ºC
125ºC
0.05
0.3 0.1 0.5 5 50
0.5
1
50 V 10V
DS =
25ºC
125ºC
0
100 10 20 30 40 50
500
1000
5000
10000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
00 0.2 0.4 0.6 0.8 1.4
10
20
30
V 0V
GS =
5V
0246810
0
1
2
I 30A
D=
I 15A
D=
V 10V
GS =
I 15A
D=
T 55ºC
C=–
T 55ºC
C=–
0.5
0.5 1 5 10 50 100
1
5
10
50
100
200 ID (pulse) max
D
I max
1ms
100µs
DC OPERATION
10ms (1shot)
LIMITED
0
10
20
30
40
0 50 100 150
With infinite heatsink
Without heatsink
234
10
5
110
1.0 1.2
10V
External dimensions 1 ...... FM20
±120 (Tch 150ºC)
(Tc=25ºC)
RDS(ON) (mΩ) RDS(ON) (mΩ)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
R
DS (ON)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
22
2SK1192
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 60 V(BR) DSS 60 V ID = 250µA, VGS = 0VV
VGSS ±20 IGSS ±500 nA VGS = ±20VV
ID±40 IDSS 250 µAV
DS = 60V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 250µAA
PD90 (Tc = 25ºC) Re (yfs) 13 20 S VDS = 10V, ID = 20AW
EAS 38 RDS (on) 0.021 0.028 ΩVGS = 10V, ID = 20AmJ
Tch 150
*: VDD = 25V, L = 50µH, IL = 30A, unclamped,
See Figure 1 on Page 5.
Ciss 2500 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 20A, VDD = 30V,
VGS = 10V ,
See Figure 2 on Page 5.
ºC
Tstg –55 to +150 Coss 1200 pFºC
ton 260 ns
toff 120 ns
Symbol Unit Conditions
Ratings
typ maxmin
*
045
V 5V
GS =
6V
5.5V
V 10V
GS =
0
010 20 40
10
20
30
40
–50
0050100
150
10
20
30
40
51020
V 10V
DS =
0.05
0.3 0.1 0.5 1 50
0.5
5
10
50 V 10V
DS =
25ºC
125ºC
0
100 10 20 30 40 50
500
1000
5000
10000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
0 0.2 0.4 0.6 0.8 1.4
V 0V
GS =
5V
0246810
0
1
2
I 40A
D=
I 20A
D=
V 10V
GS =
I 20A
D=
T 55ºC
C=–
0.5 1 5 10 50 100
1
5
10
50
100
200 ID (pulse) max
D
I max
1ms
100µs
DC OPERATION
10ms (1shot)
0
10
50
80
90
0 50 100 150
LIMITED
With infinite heatsink
Without heatsink
70
60
40
30
20
40
25
15
0
35
30
20
10
5
40
25
15
0
35
30
20
10
5
40
25
15
0
35
30
20
10
5
123
10V
25ºC
125ºC
T 55ºC
C=–
30
1
510
1.0 1.2
10V
External dimensions 2 ...... FM100
±160 (Tch 150ºC)
(Tc=25ºC)
RDS(ON) (mΩ) RDS(ON) (mΩ)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
R
DS (ON)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
23
2SK1712
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 60 V(BR) DSS 60 V ID = 250µA, VGS = 0VV
VGSS ±10 IGSS ±500 nA VGS = ±10VV
ID±15 IDSS 250 µAV
DS = 60V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH 1.0 2.0 V VDS = 10V, ID = 250µAA
PD30 (Tc = 25ºC) Re (yfs) 5.6 8.4 S VDS = 10V, ID = 8.0AW
EAS 6.2 RDS (on) 0.12 0.14 ΩVGS = 4V, ID = 8.0A
0.07 0.1 ΩVGS = 10V, ID = 8.0A
mJ
Tch 150
*: VDD = 25V, L = 50µH, IL = 12A, unclamped,
See Figure 1 on Page 5.
Ciss 820 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 8A, VDD = 30V,
VGS = 10V ,
See Figure 2 on Page 5.
ºC
Tstg –55 to +150
Coss 360 pF
ºC
ton 100 ns
toff 75 ns
Symbol Unit Conditions
Ratings
typ maxmin
*
0
16
8
6
0
V 3V
GS =
3.5V
4.5V 4V
V 10V
GS =
0
0246
0.04
0.06
0.08
0.10
0.12
0.14
–50
0.03 050100
150
0.07
0.09
0.11
0.13
0.15
0.17
2510
V 10V
DS =
25ºC
125ºC
0.03
0.2 0.1 0.5 1 5
0.5
5
10
20 V 10V
DS =
25ºC
125ºC
0
30 10 20 30 40 50
50
100
500
1000
3000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
0.30.5 1 5 10 50 100
0.5
5
10
50
100 ID (pulse) max
D
I max
1ms
100µs
DC OPERATION
0
10
20
30
0 50 100 150
00 0.2 0.4 0.6 0.8 1.0
2
12
14
V 0V
GS =
4V
012345
0
1
2
15A
I 8A
D=
I 8A
D=
T 55ºC
C=–
T 55ºC
C=–
LIMITED
With infinite heatsink
Without heatsink
14
12
10
4
2
12345
5V 16
8
6
0
14
12
10
4
20.02
8 10121416
4V
1
10 20
0.05
V 10V
GS =
4V
4
6
8
10
1.2 1.4
10V
1
External dimensions 1 ...... FM20
±60 (Tch 150ºC)
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
R
DS (ON)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
V
(BR)DSS
60 V I
D
= 100µA, V
GS
= 0V
I
GSS
±100 nA V
GS
= ±20V
I
DSS
100 µAV
DS
= 60V, V
GS
= 0V
V
TH
2.0
10
4.0
1.5
VV
DS
= 10V, I
D
= 250µA
Re
(yfs)
SV
DS
= 10V, I
D
= 12A
R
DS(on)
V
SD
37 mΩV
GS
= 10V, I
D
= 12A
V
GS
= 0V, I
SD
= 25A
Ciss 1300
500
31
15
pF V
DS
= 25V, f
= 1.0MHz,
V
GS
= 0V
I
D
= 12A, V
DD
30V,
V
GS
= 10V, R
L
= 2.5Ω
See Figure 2 on Page 5.
Coss pF
200
30
160
75
30
1.0
Crss pF
t
d(on)
ns
t
r
t
r
t
d(off)
ns
ns
ns
V
24
2SK2419
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 60 V
VGSS ±20 V
ID±25 A
ID (pulse) ±100
(Ta = 25ºC) (Ta = 25ºC)
A
PD35 (Tc = 25ºC)
26
W
EAS mJ
Tch 150 ºC
Tstg –55 to +150 ºC
Symbol Unit Conditions
Ratings
typ maxmin
*
External dimensions 1 ...... FM20
*: PW 100µs, duty cycle 1%
25
2SK2420
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 60 V(BR) DSS 60 V ID = 100µA, VGS = 0VV
VGSS ±20 IGSS ±100 nA VGS = ±20VV
ID±30 IDSS 100 µAV
DS = 60V, VGS = 0VA
ID (pulse) ±120
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0
13
4.0 V VDS = 10V, ID = 250µAA
PD40 (Tc = 25ºC) Re (yfs) SV
DS = 10V, ID = 15AW
EAS RDS (on) 28 mΩVGS = 10V, ID = 15AmJ
Tch 150
38
Ciss 2200
850
210
145
21
20
pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ºC
Tstg –55 to +150 Coss pFºC
ton ns
toff ns
Symbol Unit Conditions
Ratings
typ maxmin
*1
*2
01 5
30
20
10
0
V 4V
GS =
6V5.5V
5V
4.5V
V 10V
GS =
0
010 20 30
10
20
30
40
–50
0050100
150
10
20
30
40
10
51020
0
20
30 V 10V
DS =
25ºC
125ºC
0.30.1 0.5 1 30
1
5
10
40 V 10V
DS =
25ºC
125ºC
0 1020304050
100
500
1000
6000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
0.5
0.3 1 5 10 50 100
1
5
10
50
100
200 ID (pulse) max
D
I max
1ms
100µs
DC OPERATION
10ms (1shot)
0
10
20
30
40
0 50 100 150
00 1.0 1.2
10
20
30
V 0V
GS =
5V
01234 6
0
0.5
1.0
1.5
I 30A
D=
I 15A
D=
V 10V
GS =
I 15A
D=
T 55ºC
C=–
T 55ºC
C=–
LIMITED
With infinite heatsink
Without heatsink
234
10V
5
510
0.5
0.5
10V
0.5
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 50V, L = 50µH, IL = 30A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
ID = 15A, VDD 30V,
RL = 2Ω, VGS = 10V,
See Figure 2 on Page 5.
(Tc=25ºC)
RDS(ON) (mΩ) RDS(ON) (mΩ)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
RDS (ON)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
26
2SK2421
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 60 V(BR) DSS 60 V ID = 100µA, VGS = 0VV
VGSS ±20 IGSS ±100 nA VGS = ±20VV
ID±40 IDSS 100 µAV
DS = 60V, VGS = 0VA
ID (pulse) ±160
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 1mAA
PD40 (Tc = 25ºC) Re (yfs) 18 25 S VDS = 10V, ID = 20AW
EAS 60 RDS (on) 17.5 20 mΩVGS = 10V, ID = 20AmJ
Tch 150
Ciss 2400 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ºC
IAS 40 A
Tstg –55 to +150
Coss 950 pF
ºCt
on 400 ns
toff 195 ns
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
045
40
30
20
0
V 10V
GS =
0
010 20 30
10
20
30
–50
00 50 100 150
10
20
30
40
4
10
51020
0
30
40 V 10V
DS =
25ºC
125ºC
0.1 0.5 1 5
0.5
1
50
0
100 10 20 30 40 50
500
1000
7000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
0
10
20
30
40
0 50 100 150
00 0.5 1.0 1.2
20
30
40
V 0V
GS =
10V
0246
0
1
2
I 40A
D=
I 20A
D=
V 10V
GS =
I 20A
D=
T 55ºC
C=–
With infinite heatsink
Without heatsink
10
V 4.5V
GS =
5V
5.5V
10V
321
20
40
10
5
10 50
V 10V
DS =
25ºC
125ºC
T 55ºC
C=–
5000
5V
10
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 20V, L = 50µH, IL = 40A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
ID = 20A, VDD 30V,
RL = 1.5Ω, VGS = 10V,
See Figure 2 on Page 5.
RDS(ON) (mΩ) RDS(ON) (mΩ)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V) VSD (V)
IDR (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta Characteristics
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
27
2SK2701
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 450 V(BR) DSS 450 V ID = 100µA, VGS = 0V
V
VGSS ±30 IGSS ±100 nA VGS = ±30V
V
ID ±7IDSS 100 µAV
DS = 450V, VGS = 0V
A
ID (pulse) ±28
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
A
PD35 (Tc = 25ºC)
Re (yfs) 3.5 5
3.0 SV
DS = 20V, ID = 3.5A
W
EAS 130
RDS (on) 0.84 1.10
1.5
ΩVGS = 10V, ID = 3.5A
ISD = 7A, VGS = 0V
mJ
Tch 150
Ciss 720 pF VDS = 10V, f = 1.0MHz,
VGS = 0V
ID = 3.5A, VDD = 200V,
RL = 57Ω, VGS = 10V,
See Figure 2 on Page 5.
ºC
IAS 7 A
Tstg –55 to +150
Coss 150 pF
Crss 65 pF
ºC
td (on) 25 ns
tr
td (off)
tf
VSD
40 ns
70 ns
50 ns
1.0 V
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
01020
7
1
0
4
5
6
2
3
515
5.5V
5V
VGS = 10V
0
017456
0.4
0.6
0.8
0.2
1.0
–50
0050100
150
0.5
1.0
2.0
1.5
2.5
4
1
51020
0
2
7
6
5
4
VDS = 20V
25ºC
125ºC
0
20
40
0 50 100 150
02468
0
2
4
6
10
TC = –55ºC
10V
3
23
0.05
0.2 0.1 0.5 1
0.5
1
10
5
57
8
30
10
VGS = 4.5V
25ºC
125ºC
VDS = 20V
TC = –55ºC
ID = 7A
ID = 3.5A
ID = 3.5A
VGS = 10V
0 1020304050
20
50
100
500
1000
2000
Ciss
Coss
Crss
VGS = 0V
f = 1MHz
00 0.2 0.4 0.6 0.8 1.0
2
7
6
5
4
3
1
5V,10V
VGS = 0V
3 5 10 50 100 500
0.05
0.1
0.5
1
5
10
50 ID (pulse) max
I
D
max
100µs
DC OPERATION
RDS (ON) LIMITED
1ms
10ms (1shot)
With infinite heatsink
Without heatsink
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 30V, L = 5mH, IL = 7A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
28
2SK2702
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 450 V(BR) DSS 450 V ID = 100µA, VGS = 0V
V
VGSS ±30 IGSS ±100 nA VGS = ±30V
V
ID±10 IDSS 100 µAV
DS = 450V, VGS = 0V
A
ID (pulse) ±40
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
A
PD35 (Tc = 25ºC)
Re (yfs) 5 7
3.0 SV
DS = 20V, ID = 5A
W
EAS 300
RDS (on) 0.66 0.80
1.5
ΩVGS = 10V, ID = 5A
ISD = 10A, VGS = 0V
mJ
Tch 150
Ciss 1000 pF VDS = 10V, f = 1.0MHz,
VGS = 0V
ID = 5A, VDD = 200V,
RL = 40Ω, VGS = 10V,
See Figure 2 on Page 5.
ºC
IAS 10 A
Tstg –55 to +150
Coss 200 pF
Crss 95 pF
ºC
td (on) 25 ns
tr
td (off)
tf
VSD
30 ns
85 ns
45 ns
1.0 V
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
020
10
2
4
0
8
6
51015
5V
VGS = 10V
0
010
0.6
0.4
0.2
0.8
1.0
–50
0050100
150
1.5
1.0
0.5
2.0
4 5 10 20
0
10
8
6
4
2
VDS = 20V
25ºC
125ºC
02468
0
4
2
6
10
TC = –55ºC
10V
2468
0.05
0.2
0.5
0.1 0.5 1
1
20
10
5
105
8
VGS = 4.5V
25ºC
125ºC
VDS = 20V
TC = –55ºC
ID = 5A
ID = 5A
VGS = 10V
0 1020304050
50
20
100
500
5000
1000 Ciss
Coss
Crss
VGS =
0V
f = 1MHz
00 0.5 1.0 1.5
10
8
6
4
2
5V,10V
VGS =
0V
3 5 10 50 500100
0.05
0.1
0.5
1
5
50
10
ID (pulse) max
I
D
max
100µs
DC OPERATION
RDS (ON) LIMITED
1ms
10ms (1shot)
ID = 10A
5.5V
0
10
20
30
40
0 50 100 150
Without heatsink
With infinite heatsink
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 30V, L = 6mH, IL = 10A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
29
2SK2703
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 450 V(BR) DSS 450 V ID = 100µA, VGS = 0V
V
VGSS ±30 IGSS ±100 nA VGS = ±30V
V
ID ±10 IDSS 100 µAV
DS = 450V, VGS = 0V
A
ID (pulse) ±40
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
A
PD75 (Tc = 25ºC)
Re (yfs) 5 7
3.0 SV
DS = 20V, ID = 5A
W
EAS 300
RDS (on) 0.66 0.80
1.5
ΩVGS = 10V, ID = 5A
ISD = 10A, VGS = 0V
mJ
Tch 150
Ciss 1000 pF VDS = 10V, f = 1.0MHz,
VGS = 0V
ID = 5A, VDD = 200V,
RL = 40Ω, VGS = 10V,
See Figure 2 on Page 5.
ºC
IAS 10 A
Tstg –55 to +150
Coss 200 pF
Crss 95 pF
ºC
td (on) 25 ns
tr
td (off)
tf
VSD
30 ns
85 ns
45 ns
1.0 V
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
0
10
20
30
40
50
60
70
75
0 50 100 150
With infinite heatsink
Without heatsink
020
10
2
4
0
8
6
51015
5V
VGS = 10V
0
010
0.6
0.4
0.2
0.8
1.0
–50
0050100
150
1.5
1.0
0.5
2.0
4 5 10 20
0
10
8
6
4
2
VDS = 20V
25ºC
125ºC
02468
0
4
2
6
10
TC = –55ºC
10V
2468
0.05
0.2
0.5
0.1 0.5 1
1
20
10
5
105
8
VGS = 4.5V
25ºC
125ºC
VDS = 20V
TC = –55ºC
ID = 5A
ID = 5A
VGS = 10V
0 1020304050
50
20
100
500
5000
1000 Ciss
Coss
Crss
VGS = 0V
f = 1MHz
00 0.5 1.0 1.5
10
8
6
4
2
5V,10V
VGS = 0V
3 5 10 50 500100
0.1
0.5
1
5
50
10
ID (pulse) max
I
D
max
100µs
DC OPERATION
R
DS (ON)
LIMITED
1ms
10ms (1shot)
ID = 10A
5.5V
External dimensions 2 ...... FM100
*1: PW 100µs, duty cycle 1%
*2: VDD = 30V, L = 6mH, IL = 10A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
30
2SK2704
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 450 V(BR) DSS 450 V ID = 100µA, VGS = 0V
V
VGSS ±30 IGSS ±100 nA VGS = ±30V
V
ID±13 IDSS 100 µAV
DS = 450V, VGS = 0V
A
ID (pulse) ±52
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
A
PD40 (Tc = 25ºC)
Re (yfs) 6.0 9.0
3.0 SV
DS = 20V, ID = 6.5A
W
EAS 400
RDS (on) 0.48 0.57
1.5
ΩVGS = 10V, ID = 6.5A
ISD = 13A, VGS = 0V
mJ
Tch 150
Ciss 1300 pF VDS = 10V, f = 1.0MHz,
VGS = 0V
ºC
IAS 13 A
Tstg –55 to +150
Coss 280 pF
Crss 130 pF
ºC
td (on) 30 ns
tr
td (off)
tf
VSD
40 ns
95 ns
50 ns
1.0 V
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
020
14
2
4
0
12
10
6
8
51015
5V
VGS = 10V
0
01310 12
0.3
0.2
0.1
0.4
0.6
0.5
–50
00 50 100 150
1.2
1.0
0.2
0.4
0.6
0.8
1.4
4 5 10 20
0
14
12
10
8
6
4
2
VDS = 20V
25ºC
125ºC
02468
0
4
2
6
10
TC = –55ºC
10V
2468
0.05
0.2
0.5
0.1 0.5 1
1
20
10
5
135
8
VGS = 4V
25ºC
125ºC
VDS = 20V
TC = –55ºC
ID = 6.5A
ID = 6.5A
VGS = 10V
0 1020304050
50
100
500
5000
1000 Ciss
Coss
Crss
VGS =
0V
f = 1MHz
00 0.5 1.0 1.5
14
12
10
8
6
4
2
5V,10V
VGS =
0V
2 5 10 50 500100
0.05
0.1
0.5
1
5
70
50
10
ID (pulse) max
I
D
max
100µs
DC OPERATION
R
DS (ON)
LIMITED
1ms
10ms (1shot)
ID = 13A
5.5V
4.5V
0
10
20
30
40
0 50 100 150
With infinite heatsink
Without heatsink
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 30V, L = 4.5mH, IL = 13A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
ID = 6.5A, VDD 200V,
RL = 30Ω, VGS = 10V,
See Figure 2 on Page 5.
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
31
2SK2705
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 450 V(BR) DSS 450 V ID = 100µA, VGS = 0V
V
VGSS ±30 IGSS ±100 nA VGS = ±30V
V
ID±13 IDSS 100 µAV
DS = 450V, VGS = 0V
A
ID (pulse) ±52
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
A
PD75 (Tc = 25ºC)
Re (yfs) 6.0 9.0
3.0 SV
DS = 20V, ID = 6.5A
W
EAS 400
RDS (on) 0.48 0.57
1.5
ΩVGS = 10V, ID = 6.5A
ISD = 13A, VGS = 0V
mJ
Tch 150
Ciss 1300 pF VDS = 10V, f = 1.0MHz,
VGS = 0V
ºC
IAS 13 A
Tstg –55 to +150
Coss 280 pF
Crss 130 pF
ºC
td (on) 30 ns
tr
td (off)
tf
VSD
40 ns
95 ns
50 ns
1.0 V
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
0
10
20
30
40
50
60
70
75
0 50 100 150
With infinite heatsink
Without heatsink
020
14
2
4
0
12
10
6
8
51015
5V
VGS = 10V
0
01310 12
0.3
0.2
0.1
0.4
0.6
0.5
–50
0050100
150
1.2
1.0
0.2
0.4
0.6
0.8
1.4
4 5 10 20
0
14
12
10
8
6
4
2
VDS = 20V
25ºC
125ºC
02468
0
4
2
6
10
TC = –55ºC
10V
2468
0.05
0.2
0.5
0.1 0.5 1
1
20
10
5
135
8
VGS = 4V
25ºC
125ºC
VDS = 20V
TC = –55ºC
ID = 6.5A
ID = 6.5A
VGS = 10V
0 1020304050
50
100
500
5000
1000 Ciss
Coss
Crss
VGS = 0V
f = 1MHz
00 0.5 1.0 1.5
14
12
10
8
6
4
2
5V,10V
VGS =
0V
3 5 10 50 500100
0.1
0.5
1
5
70
50
10
ID (pulse) max
I
D
max
100µs
DC OPERATION
1ms
10ms (1shot)
ID = 13A
5.5V
4.5V
R
DS (ON)
LIMITED
External dimensions 2 ...... FM100
*1: PW 100µs, duty cycle 1%
*2: VDD = 30V, L = 4.5mH, IL = 13A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
ID = 6.5A, VDD 200V,
RL = 30Ω, VGS = 10V,
See Figure 2 on Page 5.
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
32
2SK2706
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 450 V(BR) DSS 450 V ID = 100µA, VGS = 0V
V
VGSS ±30 IGSS ±100 nA VGS = ±30V
V
ID±18 IDSS 100 µAV
DS = 450V, VGS = 0V
A
ID (pulse) ±72
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
A
PD85 (Tc = 25ºC)
Re (yfs) 10 15
3.0 SV
DS = 20V, ID = 9A
W
EAS 700
RDS (on) 0.24 0.30
1.5
ΩVGS = 10V, ID = 9A
ISD = 18A, VGS = 0V
mJ
Tch 150
Ciss 2500 pF VDS = 10V, f = 1.0MHz,
VGS = 0V
ID = 9A, VDD = 200V,
RL = 22Ω, VGS = 10V,
See Figure 2 on Page 5.
ºC
IAS 18 A
Tstg –55 to +150
Coss 500 pF
Crss 260 pF
ºC
td (on) 40 ns
tr
td (off)
tf
VSD
60 ns
170 ns
85 ns
1.0 V
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
01020
18
4
2
0
10
12
14
16
6
8
515
4.5V
5V
VGS = 10V
0
021810 12 14 16
0.1
0.2
0.3
–50
0050100
150
0.2
0.1
0.4
0.3
0.6
0.5
0.7
4
2
51020
0
4
18
16
14
12
10
VDS = 20V
25ºC
125ºC
0
20
50
80
90
0 50 100 150
02468
0
2
4
6
10
TC = –55ºC
With infinite heatsink
Without heatsink
10V
6
8
468
0.05
0.3 0.1 0.5 1 1810
0.5
1
10
30
5
5
8
70
60
40
10
30
VGS = 4V
25ºC
125ºC
VDS = 20V
TC = –55ºC
ID = 18A
ID = 9A
ID = 9A
VGS = 10V
0 1020304050
100
500
1000
5000
10000
Ciss
Coss
Crss
VGS =
0V
f = 1MHz
00 0.5 1.0 1.5
4
8
18
16
14
12
10
6
2
5V,10V
VGS =
0V
3 5 10 50 100 500
0.1
0.5
1
5
10
100
50
I
D
(pulse) max
ID max
100µs
DC OPERATION
R
DS (ON)
LIMITED
1ms
10ms (1shot)
External dimensions 2 ...... FM100
*1: PW 100µs, duty cycle 1%
*2: VDD = 30V, L = 4mH, IL = 18A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
33
2SK2707
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 600 V(BR) DSS 600 V ID = 100µA, VGS = 0V
V
VGSS ±30 IGSS ±100 nA VGS = ±30V
V
ID±4.5 IDSS 100 µAV
DS = 600V, VGS = 0V
A
ID (pulse) ±18
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
A
PD35 (Tc = 25ºC)
Re (yfs) 2.4 3.5
3.0 SV
DS = 20V, ID = 2A
W
EAS 50
RDS (on) 1.45 1.85
1.5
ΩVGS = 10V, ID = 2A
ISD = 4.5A, VGS = 0V
mJ
Tch 150
Ciss 560 pF VDS = 10V, f = 1.0MHz,
VGS = 0V
ID = 2A, VDD = 250V,
RL = 125Ω, VGS = 10V,
See Figure 2 on Page 5.
ºC
IAS 4.5 A
Tstg –55 to +150
Coss 130 pF
Crss 65 pF
ºC
td (on) 20 ns
tr
td (off)
tf
VSD
30 ns
65 ns
90 ns
0.9 V
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
01020
3
2
1
0
4
5
515
4.5V
5V VGS = 10V
0
02534
0.4
0.8
1.2
1.6
2.0
–50
0050100
150
2
1
3
4
5
4
1
51020
0
5
4
3
VDS = 20V
25ºC
125ºC
02468
0
2
4
6
10
TC = –55ºC
10V
2
1
0.05
0.2 0.1 0.5 1
0.5
1
10
5
4.5
8
VGS = 4V
25ºC
125ºC
VDS = 20V
TC = –55ºCID = 4.5A
ID = 2A
ID = 2A
VGS = 10V
0 1020304050
20
50
100
500
1000
5000
Ciss
Coss
Crss
VGS = 0V
f = 1MHz
00 0.5 1.0 1.5
2
4
5
3
1
5V,10V
VGS = 0V
3 5 10 50 100 500 700
0.05
0.1
0.5
1
5
20
10 ID (pulse) max
I
D
max
DC OPERATION
RDS (ON) LIMITED
1ms (1shot)
100µs (1shot)
0
10
20
30
40
0 50 100 150
With infinite heatsink
Without heatsink
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 30V, L = 5mH, IL = 4.5A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
34
2SK2708
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 600 V(BR) DSS 600 V ID = 100µA, VGS = 0V
V
VGSS ±30 IGSS ±100 nA VGS = ±30V
V
ID ±7IDSS 100 µAV
DS = 600V, VGS = 0V
A
ID (pulse) ±28
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
A
PD40 (Tc = 25ºC)
Re (yfs) 4.0 6.0
3.0 SV
DS = 20V, ID = 3.5A
W
EAS 150
RDS (on) 0.85 1.1
1.5
ΩVGS = 10V, ID = 3.5A
ISD = 7A, VGS = 0V
mJ
Tch 150
Ciss 950 pF VDS = 10V, f = 1.0MHz,
VGS = 0V
ID = 3.5A, VDD = 250V,
RL = 71Ω, VGS = 10V,
See Figure 2 on Page 5.
ºC
IAS 7 A
Tstg –55 to +150
Coss 220 pF
Crss 120 pF
ºC
td (on) 30 ns
tr
td (off)
tf
VSD
27 ns
100 ns
50 ns
0.9 V
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
01020
3
2
1
0
4
7
5
6
515
4.5V
5V VGS = 10V
0
0276534
0.2
0.4
0.6
0.8
1.0
–50
0050100
150
1.0
0.5
1.5
2.0
2.5
4
1
51020
0
7
5
6
4
3
VDS = 20V
25ºC
125ºC
02468
0
2
4
6
10
TC = –55ºC
10V 5.5V
2
1
0.05
0.3 0.1 0.5 1
0.5
1
10
5
75
8
VGS = 4V
25ºC
125ºC
VDS = 20V
TC = –55ºC
ID = 7A
ID = 3.5A
ID = 3.5A
VGS = 10V
0 1020304050
40
100
500
1000
5000
Ciss
Coss
Crss
VGS = 0V
f = 1MHz
00 0.5 1.0 1.5
2
4
7
5
6
3
1
5V,10V
VGS = 0V
3 5 10 50 100 700500
0.05
0.1
0.5
1
5
30
10
I
D
(pulse) max
I
D
max
DC OPERATION
RDS (ON) LIMITED
1ms (1shot)
100µs (1shot)
0
10
20
30
40
0 50 100 150
With infinite heatsink
Without heatsink
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 30V, L = 6mH, IL = 7A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
35
2SK2709
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 600 V(BR) DSS 600 V ID = 100µA, VGS = 0V
V
VGSS ±30 IGSS ±100 nA VGS = ±30V
V
ID±8.5 IDSS 100 µAV
DS = 600V, VGS = 0V
A
ID (pulse) ±34
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
A
PD85 (Tc = 25ºC)
Re (yfs) 5.0 7.0
3.0 SV
DS = 20V, ID = 4A
W
EAS 300
RDS (on) 0.65 0.85
1.5
ΩVGS = 10V, ID = 4A
ISD = 8.5A, VGS = 0V
mJ
Tch 150
Ciss 1200 pF VDS = 10V, f = 1.0MHz,
VGS = 0V
ID = 4A, VDD = 250V,
RL = 62.5Ω, VGS = 10V,
See Figure 2 on Page 5.
ºC
IAS 8.5 A
Tstg –55 to +150
Coss 270 pF
Crss 150 pF
ºC
td (on) 30 ns
tr
td (off)
tf
VSD
40 ns
110 ns
65 ns
0.95 V
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
External dimensions 2 ...... FM100
*1: PW 100µs, duty cycle 1%
*2: VDD = 30V, L = 8mH, IL = 8.5A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
36
2SK2710
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 600 V(BR) DSS 600 V ID = 100µA, VGS = 0V
V
VGSS ±30 IGSS ±100 nA VGS = ±30V
V
ID±12 IDSS 100 µAV
DS = 600V, VGS = 0V
A
ID (pulse) ±48
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
A
PD85 (Tc = 25ºC)
Re (yfs) 7.5 11
3.0 SV
DS = 20V, ID = 6A
W
EAS 400
RDS (on) 0.42 0.55
1.5
ΩVGS = 10V, ID = 6A
ISD = 12A, VGS = 0V
mJ
Tch 150
Ciss 1900 pF VDS = 10V, f = 1.0MHz,
VGS = 0V
ID = 6A, VDD = 250V,
RL = 20.8Ω, VGS = 10V,
See Figure 2 on Page 5.
ºC
IAS 12 A
Tstg –55 to +150
Coss 410 pF
Crss 240 pF
ºC
td (on) 35 ns
tr
td (off)
tf
VSD
45 ns
160 ns
70 ns
0.95 V
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
01020
6
2
0
4
12
8
10
515
5V
VGS = 10V
0
021210864
0.1
0.2
0.3
0.4
0.5
–50
0050100
150
0.4
0.2
0.8
0.6
1.0
1.2
4 5 10 20
0
12
8
10
6
4
VDS = 20V
25ºC
125ºC
02468
0
2
4
6
10
TC = –55ºC
10V 5.5V
2
0.05
0.3 0.1 0.5 1
0.5
1
20
10
5
125
8
VGS = 4.5V
25ºC
125ºC
VDS = 20V
TC = –55ºC
ID = 12A
ID = 6A
ID = 6A
VGS = 10V
0 1020304050
50
100
500
1000
10000
5000
Ciss
Coss
Crss
VGS = 0V
f = 1MHz
00 0.5 1.0 1.5
4
8
12
10
6
2
5V,10V
VGS = 0V
3 5 10 50 100 500 700
0.1
0.5
1
5
50
10
I
D
(pulse) max
I
D
max
DC OPERATION
R
DS (ON)
LIMITED
1ms (1shot)
100µs (1shot)
0
20
50
80
90
0 50 100 150
With infinite heatsink
Without heatsink
70
60
40
10
30
External dimensions 2 ...... FM100
*1: PW 100µs, duty cycle 1%
*2: VDD = 30V, L = 5.5mH, IL = 12A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
37
2SK2778
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 100 V(BR) DSS 100 V ID = 100µA, VGS = 0V
V
VGSS ±20 IGSS ±100 nA VGS = ±20V
V
ID±12 IDSS 100 µAV
DS = 100V, VGS = 0V
A
ID (pulse) ±48
(Ta = 25ºC) (Ta = 25ºC)
VTH 1.0 2.0 V VDS = 10V, ID = 250µA
A
PD30 (Tc = 25ºC)
Re (yfs) 7 11 S VDS = 10V, ID = 6A
W
EAS 70
RDS (on) 105 175
1.5
mΩ
130 220 mΩVGS = 10V, ID = 6A
VGS = 4V, ID = 6A
ISD = 12A, VGS = 0V
mJ
Tch 150
Ciss 740 pF VDS = 10V, f = 1.0MHz,
VGS = 0V
ºC
IAS 12 A
Tstg –55 to +150
Coss 240 pF
Crss 75 pF
ºCtd (on) 15 ns
tr
td (off)
tf
VSD
55 ns
60 ns
20 ns
1.0 V
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
010
12
2
4
6
0
10
8
2468
3.5V
4V
3V
VGS = 4V
VGS = 10V
0
012108
50
100
150
200
–50
0050100
150
50
150
100
250
200
300
2 5 10 20
0
2
12
10
6
8
4
VDS = 10V
25ºC
125ºC
01234
0
2
1
3
5
TC = –55ºC
10V
426
0.05
0.4 0.1 0.5 1
1
20
10
5
125
4
VGS = 2.5V
25ºC
125ºC
VDS = 10V
TC = –55ºC
ID = 6A
ID = 6A
VGS = 10V
VGS = 4V
0 1020304050
20
50
100
500
5000
1000 Ciss
Coss
Crss
VGS = 0V
f = 1MHz
00 0.5 1.0 1.5
12
10
8
6
4
2
10V
5V
VGS = 0V
0.5 1 5 10 50 200100
0.1
0.5
1
5
50
10
ID (pulse) max
I
D
max
100µs
DC OPERATION
R
DS (ON)
LIMITED
1ms
10ms (1shot)
ID = 12A
0
10
20
30
0 50 100 150
With infinite heatsink
Without heatsink
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 25V, L = 730µH, IL = 12A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
ID = 6A, VDD 50V,
RL = 8.3Ω, VGS = 10V,
See Figure 2 on Page 5.
(Tc=25ºC)
RDS(ON) (mΩ) RDS(ON) (mΩ)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
38
2SK2779
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 100 V(BR) DSS 100 V ID = 100µA, VGS = 0V
V
VGSS ±20 IGSS ±100 nA VGS = ±20V
V
ID±20 IDSS 100 µAV
DS = 100V, VGS = 0V
A
ID (pulse) ±80
(Ta = 25ºC) (Ta = 25ºC)
VTH 1.0 2.0 V VDS = 10V, ID = 250µA
A
PD35 (Tc = 25ºC)
Re (yfs) 12 20 S VDS = 10V, ID = 10A
W
EAS 200
RDS (on) 60 80
1.5
mΩ
75 95 mΩVGS = 10V, ID = 10A
VGS = 4V, ID = 10A
ISD = 20A, VGS = 0V
mJ
Tch 150
Ciss 1630 pF VDS = 10V, f = 1.0MHz,
VGS = 0V
ºC
IAS 20 A
Tstg –55 to +150
Coss 480 pF
Crss 180 pF
ºCtd (on) 20 ns
tr
td (off)
tf
VSD
90 ns
120 ns
55 ns
1.0 V
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
010
20
5
0
15
10
2468
3.5V
4V
3V
VGS = 4V
VGS = 10V
0
0201510
40
20
60
80
–50
00 50 100 150
50
100
150
251020
0
20
15
10
5
VDS = 10V
25ºC
125ºC
01234
0
1.0
0.5
1.5
2.5
TC = –55ºC
10V
5
0.05
0.5 0.1 0.5 1
1
50
10
5
20105
2.0
VGS = 2V
25ºC
125ºC
VDS = 10V
TC = –55ºC
ID = 10A
ID = 10A
VGS = 10V
VGS = 4V
0 1020304050
50
100
500
5000
1000
Ciss
Coss
Crss
VGS = 0V
f = 1MHz
00 0.5 1.0 1.5
20
15
10
5
5V
VGS = 0V
0.5 1 5 10 50 200100
0.1
0.5
1
5
100
50
10
ID (pulse) max
I
D
max
100µs
DC OPERATION
R
DS (ON)
LIMITED
1ms
10ms
ID = 20A
0
10
20
30
40
0 50 100 150
Without heatsink
With infinite heatsink
2.5V
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 25V, L = 750µH, IL = 20A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
ID = 10A, VDD 50V,
RL = 5Ω, VGS = 10V,
See Figure 2 on Page 5.
(Tc=25ºC)
RDS(ON) (mΩ) RDS(ON) (mΩ)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
39
2SK2803
VGS=0V
f=1MHz
Ciss
Coss
Crss
VGS=10V
ID=1.5A
01015520
3.0
2.0
1.0
0
VDS (V)
ID (A)
VGS=10V
0
0123
1
2
3
4
ID (A)
RDS(ON) (Ω)
0.05
0.3 0.1 0.5 1.0 3.0
0.5
1
5
ID (A)
Re (yfs) (S)
3
0.03
0.05
5 10 50 100 500
0.1
0.5
1
5
10
20 (TC=25°C)
ID (A)
VDS (V)
—
50
0050100
150
1
2
3
4
5
RDS(ON) (Ω)
Tc (ºC)
00 0.5 1.0 1.5
1
2
3
VGS=0V
5V,10V
IDR (A)
VSD (V)
1.0
0
2.0
3.0
02468
ID (A)
VGS (V)
VDS=20V
25°C
125°C
TC=–55°C
VDS=20V
25°C
–55°C
TC=125°C
5.5V
5V
4.5V
VGS = 4V
10V 6V
35 20
0
4
6
8
10
VGS (V)
VDS (V)
2
10
ID=1.5A
ID=3A
0
10 10 20 30 40 50
50
100
500
1000
VDS (V)
Capacitance (pF)
I
D
(pulse)max
ID max
1ms
10ms(1shot)
100µs
DC OPERATION
LIMITED
R
DS(ON)
PD (W)
Ta (ºC)
0
10
20
30
0 50 100 150
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 450 V(BR) DSS 450 V ID = 100µA, VGS = 0V
V
VGSS ±30 IGSS ±100 nA VGS = ±30V
V
ID ±3IDSS 100 µAV
DS = 450V, VGS = 0V
A
ID (pulse) ±12
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
A
PD30 (Tc = 25ºC)
Re (yfs) 1.5 2.1 S VDS = 20V, ID = 1.5A
W
EAS 30
RDS (on) 2.1 2.8
1.4
ΩVGS = 10V, ID = 1.5A
ISD = 3A, VGS = 0V
mJ
Tch 150
Ciss 340 pF VDS = 10V, f = 1.0MHz,
VGS = 0V
ºC
IAS 3 A
Tstg –55 to +150
Coss 75 pF
Crss 26 pF
ºC
td (on) 18 ns
tr
td (off)
tf
VSD
30 ns
45 ns
85 ns
0.9 V
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 30V, L = 6.3mH, IL = 3.0A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
ID = 1.5A, VDD 200V,
RL = 133Ω, VGS = 10V,
See Figure 2 on Page 5.
Without heatsink
With infinite heatsink
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
2SK2805
VGS=0V
f=1MHz
Ciss
Coss
Crss
VGS=10V
0
0510
15
0.1
0.2
0.3
0.5
0.4
ID (A)
RDS(ON) (Ω)
0.05
0.2 0.50.1 1 5 1016
0.5
1
5
20
10
ID (A)
Re (yfs) (S)
3
0.05 5 10 50 100 500
0.1
0.5
1
5
10
100
50
ID (A)
VDS (V)
VGS=10V
ID=7.5A
—
50
0050100
150
0.2
0.4
0.6
0.8
1.0
RDS(ON) (Ω)
Tc (ºC)
VGS=0V
5V,10V
00 0.5 1.0 1.5
5
10
15
IDR (A)
VSD (V)
5
0
10
15
02468
ID (A)
VGS (V)
VDS=20V
25°C
125°C
TC=–55°C
VDS=20V
25°C
–55°C
TC=125°C
01015520
15
10
5
0
VDS (V)
ID (A)
5.5V
5V
VGS=4.5V
10V
45 20
0
5
10
15
VGS (V)
VDS (V)
10
ID=7.5A
ID=15A
010 20 30 40 50
500
50
1000
100
5000
10000
VDS (V)
Capacitance (pF)
I
D(
pulse
)
max
I
D
max
1ms
10ms(1shot)
100µs
DC OPERATION
PD (W)
Ta (ºC)
0
20
60
40
80
90
0 50 100 150
R
DS(ON)
LIMITED
40
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 450 V(BR) DSS 450 V ID = 100µA, VGS = 0V
V
VGSS ±30 IGSS ±100 nA VGS = ±30V
V
ID±15 IDSS 100 µAV
DS = 450V, VGS = 0V
A
ID (pulse) ±60
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
A
PD80 (Tc = 25ºC)
Re (yfs) 8.0 11.5
3.0 SV
DS = 20V, ID = 7.5A
W
EAS 550
RDS (on) 0.30 0.38
1.4
ΩVGS = 10V, ID = 7.5A
ISD = 15A, VGS = 0V
mJ
Tch 150
Ciss 2100 pF VDS = 10V, f = 1.0MHz,
VGS = 0V
ºC
IAS 15 A
Tstg –55 to +150
Coss 430 pF
Crss 210 pF
ºC
td (on) 35 ns
tr
td (off)
tf
VSD
45 ns
130 ns
60 ns
0.95 V
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
External dimensions 2 ...... FM100
*1: PW 100µs, duty cycle 1%
*2: VDD = 30V, L = 4.6mH, IL = 15A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
ID = 7.5A, VDD 200V,
RL = 26.7Ω, VGS = 10V,
See Figure 2 on Page 5.
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
(TC=25°C)
Without heatsink
With infinite heatsink
2SK2848
41
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 600 V
VGSS ±30 V
ID ±2A
ID (pulse) ±8
(Ta = 25ºC) (Ta = 25ºC)
A
PD30 (Tc = 25ºC) W
EAS 10 mJ
Tch 150 ºC
IAS 2A
Tstg –55 to +150 ºC
V(BR) DSS
600 V I
D =
100
µA
, V
GS =
0V
I
GSS ±
100 nA V
GS = ±
30V
I
DSS
100
µA
V
DS =
600V, V
GS =
0V
V
TH
2.0 4.0 V V
DS =
10V, I
D =
250
µA
Re (yfs)
1.2 1.7
3.0 SV
DS =
20V, I
D =
1A
RDS (on)
3.0 3.8
1.4
Ω
V
GS =
10V, I
D =
1A
I
SD =
2.0A, V
GS =
0V
Ciss 290 pF V
DS =
10V, f
=
1.0MHz,
V
GS =
0V
Coss 70 pF
Crss 30 pF
td (on)
16 ns
t
r
td (off)
t
f
V
SD
30 ns
45 ns
145 ns
0.9 V
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
01020
2.0
0.5
0
1.5
1.0
515
4.5V
5.5V
5V
VGS = 10V
0
02.01.5
2
3
1
4
–50
0050100
150
2
4
6
8
4 5 10 20
0
0.5
2.0
1.5
1.0
VDS = 20V
25ºC
125ºC
02468
0
5
10
20
TC = –55ºC
10V
0.5 1.0
0.05
0.2 0.1 0.5 1
0.5
1
5
2
15
VGS = 4V
25ºC
125ºC
VDS = 20V
TC = –55ºC
ID = 2A
ID = 1A
ID = 1A
VGS = 10V
0 1020304050
10
50
100
500
1000
Ciss
Coss
Crss
VGS = 0V
f = 1MHz
00 0.5 1.0 1.5
2.0
1.5
1.0
0.5 5V,10V
VGS = 0V
3 5 10 50 100 700500
0.03
0.05
0.1
0.5
1
5
10
I
D
(pulse) max
I
D
max
100µs (1shot)
DC OPERATION
RDS (ON) LIMITED
1ms (1shot)
0
10
20
30
0 50 100 150
With infinite heatsink
Without heatsink
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 30V, L = 5mH, IL = 2.0A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
ID = 1A, VDD 250V,
RL = 250Ω, VGS = 10V,
See Figure 2 on Page 5.
(Tc=25ºC)
RDS(ON) (Ω) RDS(ON) (Ω)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
2SK2943
V(BR)DSS 900 V ID = 100µA, VGS = 0V
ISD = 3A, VGS = 0V
IGSS ±100 nA VGS = ±30V
IDSS 100 µAV
DS = 900V, VGS = 0V
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
Re(yfs) 1.8 2.8 S VDS = 20V, ID = 1.5A
RDS(on) 4.0 5.0
1.5
ΩVGS = 10V, ID = 1.5A
Ciss 600 VDS = 10V, f = 1.0MHz,
VGS = 0V
ID = 1.5A, VDD 250V,
RL = 167Ω, VGS = 10V
See Figure 2 on Page 5.
Coss
Crss 100
40
20
30
65
pF
tf100
ns
pF
ns
ns
pF
ns
VSD
tr
td(off)
td(on)
1.0 V
VGS=10V
0
01.0 1.50.5 2.0 2.5 3.0
1
2
3
5
4
ID (A)
RDS(ON) (Ω)
0.05
0.2 0.50.1 1 3
0.5
1
5
10
ID (A)
Re (yfs) (S)
VGS=10V
ID=1.5A
—
50
0050100
150
2
4
6
8
10
RDS(ON) (Ω)
Tc (ºC)
VGS=0V
5V,10V
00 0.5 1.0 1.5
1.0
0.5
2.0
2.5
1.5
3.0
IDR (A)
VSD (V)
1.0
0.5
0
2.0
1.5
2.5
3.0
02468
ID (A)
VGS (V)
VDS=20V
25°C
125°C
TC=–55°C
VDS=20V
25°C
–55°C
TC=125°C
01015520
3.0
2.0
1.0
0
VDS (V)
ID (A)
4.8V
5V
4.5V
VGS = 4V
10V 6V
35 20
0
5
15
10
20
VGS (V)
VDS (V)
10
ID=1.5A
ID=3A
VGS=0V
f=1MHz
Ciss
Coss
Crss
010 20 30 40 50
500
10
50
1000
100
3000
VDS (V)
Capacitance (pF)
0.5 1
0.01
0.05
510 50100
1000500
0.1
0.5
1
5
10
20
ID (A)
VDS (V)
PD (W)
Ta (ºC)
0
10
20
30
0 50 100 150
I
D
(pulse)max
ID max
1ms
10ms(1shot)
100µs
DC OPERATION
LIMITED
RDS(ON)
42
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 900 V
VGSS ±30 V
ID ±3A
ID (pulse) ±12
(Ta = 25ºC) (Ta = 25ºC)
A
PD30 (Tc = 25ºC) W
EAS 60 mJ
Tch 150 ºC
IAS 3A
Tstg –55 to +150 ºC
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 50V, L = 13mH, IL = 3A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
(Tc=25ºC)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
With infinite heatsink
Without heatsink
2SK2945
V(BR)DSS 900 V ID = 100µA, VGS = 0V
ISD = ±100mA
IGSS ±100 nA VGS = ±30V
IDSS 100 µAV
DS = 900V, VGS = 0V
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
Re(yfs) 2.0 4.5 S VDS = 20V, ID = 2.5A
RDS(on) 2.3 3.0 ΩVGS = 10V, ID = 2.5A
Ciss 880 VDS = 10V, f = 1.0MHz,
VGS = 0V
ID = 2.5A, VDD 250V,
RL = 100Ω, VGS = 10V,
See Figure 2 on Page 5.
Coss
Crss 140
70
25
30
80
pF
tf 70
ns
pF
ns
ns
pF
ns
trr
tr
td(off)
td(on)
7.5 µsISD = 5A, VGS = 0V1.5VSD 0.9 V
43
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 900 V
VGSS ±30 V
ID ±5A
ID (pulse) ±20
(Ta = 25ºC) (Ta = 25ºC)
A
PD35 (Tc = 25ºC) W
EAS 120 mJ
Tch 150 ºC
IAS 5A
Tstg –55 to +150 ºC
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 50V, L = 9mH, IL = 5A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
2SK3002
V(BR)DSS 200 V ID = 100µA, VGS = 0V
ISD = ±100mA
IGSS ±100 nA VGS = ±20V
IDSS 100 µAV
DS = 200V, VGS = 0V
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
Re(yfs) 2.5 5.5 S VDS = 10V, ID = 4A
RDS(on) 270 350 mΩVGS = 10V, ID = 4A
Ciss 450 VDS = 10V, f = 1.0MHz,
VGS = 0V
ID = 4A, VDD 100V,
RL = 25Ω, VGS = 10V,
See Figure 2 on Page 5.
Coss
Crss 280
120
15
25
50
pF
tf 65
ns
pF
ns
ns
pF
ns
trr
tr
td(off)
td(on)
450 ns ISD = 8A, VGS = 0V1.5VSD 1.0 V
44
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 200 V
VGSS ±20 V
ID ±8A
ID (pulse) ±32
(Ta = 25ºC) (Ta = 25ºC)
A
PD30 (Tc = 25ºC) W
EAS 55 mJ
Tch 150 ºC
IAS 8 A
Tstg –55 to +150 ºC
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 50V, L = 1.5mH, IL = 8A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
2SK3003
V(BR)DSS 200 V ID = 100µA, VGS = 0V
ISD = ±100mA
IGSS ±100 nA VGS = ±20V
IDSS 100 µAV
DS = 200V, VGS = 0V
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
Re(yfs) 7 11 S VDS = 10V, ID = 9A
RDS(on) 130 175 mΩVGS = 10V, ID = 9A
Ciss 850 VDS = 10V, f = 1.0MHz,
VGS = 0V
ID = 9A, VDD 100V,
RL = 11.1Ω, VGS = 10V,
See Figure 2 on Page 5.
Coss
Crss 550
250
20
50
65
pF
tf 80
ns
pF
ns
ns
pF
ns
trr
tr
td(off)
td(on)
500 ns ISD = 18A, VGS = 0V1.5VSD 1.0 V
45
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 200 V
VGSS ±20 V
ID±18 A
ID (pulse) ±72
(Ta = 25ºC) (Ta = 25ºC)
A
PD35 (Tc = 25ºC) W
EAS 120 mJ
Tch 150 ºC
IAS 18 A
Tstg –55 to +150 ºC
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 25V, L = 650µH, IL = 18A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
2SK3004
V(BR)DSS 250 V ID = 100µA, VGS = 0V
ISD = ±100mA
IGSS ±100 nA VGS = ±20V
IDSS 100 µAV
DS = 250V, VGS = 0V
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
Re(yfs) 7 11 S VDS = 10V, ID = 9A
RDS(on) 200 250 mΩVGS = 10V, ID = 9A
Ciss 850 VDS = 10V, f = 1.0MHz,
VGS = 0V
ID = 9A, VDD 100V,
RL = 11.1Ω, VGS = 10V,
See Figure 2 on Page 5.
Coss
Crss 550
250
20
50
65
pF
tf 80
ns
pF
ns
ns
pF
ns
trr
tr
td(off)
td(on)
700 ns ISD = 18A, VGS = 0V1.5VSD 1.0 V
VGS=10V
0
0510 1815
0.10
0.05
0.15
0.20
0.25
0.30
ID (A)
RDS(ON) (Ω)
VGS=10V
ID=9A
—
50
00 50 100 150
0.1
0.2
0.3
0.4
0.5
RDS(ON) (Ω)
Tc (ºC)
00 0.5 1.0 1.5
5
15
10
18
IDR (A)
VSD (V)
0.05
0.3 0.1 0.5 1 5 10 18
0.5
1
5
20
10
ID (A)
Re (yfs) (S)
VDS=10V
25°C
125°C
TC=–55°C
5
0
10
15
18
02468
ID (A)
VGS (V)
VDS=10V
25°C
–55°C
TC=125°C
01015520
20
15
10
5
0
VDS (V)
ID (A)
5V
4.5V
VGS = 4V
10V 5.5V
35 20
0
4
6
8
10
VGS (V)
VDS (V)
2
10
ID=9A
ID=18A
VGS=0V
f=1MHz
Ciss
Coss
Crss
0
10 10 20 30 40 50
50
100
500
3000
1000
VDS (V)
Capacitance (pF)
0.5 1
0.01
0.05
5 10 50 100 500
0.1
0.5
1
5
10
100
50
ID (A)
VDS (V)
I
D
(pulse)max
ID max
1ms
10ms(1shot)
100µs
DC OPERATION
LIMITED
RDS(ON)
PD (W)
Ta (ºC)
0
10
20
30
40
0 50 100 150
46
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 250 V
VGSS ±20 V
ID±18 A
ID (pulse) ±72
(Ta = 25ºC) (Ta = 25ºC)
A
PD35 (Tc = 25ºC) W
EAS 120 mJ
Tch 150 ºC
IAS 18 A
Tstg –55 to +150 ºC
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 25V, L = 670µH, IL = 18A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
(Tc=25ºC)
With infinite heatsink
Without heatsink
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
2SK3199
V(BR)DSS 500 V ID = 100µA, VGS = 0V
ISD = ±100mA, VGS = 0V
IGSS ±100 nA VGS = ±30V
IDSS 100 µAV
DS = 500V, VGS = 0V
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
Re(yfs) 3.5 5.2
3.0 SV
DS = 20V, ID = 2.5A
RDS(on) 1.2 1.5 ΩVGS = 10V, ID = 2.5A
Ciss 650 VDS = 10V, f = 1.0MHz,
VGS = 0V
ID = 2.5A, VDD 250V,
RL = 100Ω, VGS = 10V,
See Figure 2 on Page 5.
Coss
Crss 250
110
18
30
60
pF
tf 65
ns
pF
ns
ns
pF
ns
trr
tr
td(off)
td(on)
2 µsISD = 5A, VGS = 0V1.5VSD 0.9 V
47
VGS=10V
0
012345
0.5
1.0
1.5
2.0
ID (A)
RDS(ON) (Ω)
VGS=10V
ID=2.5A
—
50
0050100
150
0.5
1.0
1.5
2.0
2.5
3.0
3.5
RDS(ON) (Ω)
Tc (ºC)
00 0.5 1.0 1.5
1
3
4
2
5
VGS=0V
5V,10V
IDR (A)
VSD (V)
0.05
0.1 0.1 0.5 1 5
0.5
1
5
50
10
ID (A)
Re (yfs) (S)
VDS=20V
25°C
125°C
TC=–55°C
2
1
3
0
4
5
0246810
ID (A)
VGS (V)
25°C
–55°C
TC=125°C
0684210
5
4
3
2
1
0
VDS (V)
ID (A)
4.8V
5V
4.5V
VGS = 4V
10V
25 20
0
5
10
15
VGS (V)
VDS (V)
10
ID=2.5A
ID=5A
VGS=0V
f=1MHz
Ciss
Coss
Crss
0
5
10
10 20 30 40 50
50
100
500
2000
1000
VDS (V)
Capacitance (pF)
1
0.01
0.05
5 10 50 100 1000
0.1
0.5
1
5
10
30
ID (A)
VDS (V)
I
D
(pulse)max
ID max
10ms(1shot)
100µs
DC OPERATION
LIMITED
R
DS(ON)
PD (W)
Ta (ºC)
0
10
20
30
0 50 100 150
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 500 V
VGSS ±30 V
ID ±5A
ID (pulse) ±20
(Ta = 25ºC) (Ta = 25ºC)
A
PD30 (Tc = 25ºC) W
EAS 35 mJ
Tch 150 ºC
IAS 5A
Tstg –55 to +150 ºC
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 30V, L = 2.6mH, IL = 5A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
(Tc=25ºC)
With infinite heatsink
Without heatsink
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
2SK3200
V(BR)DSS 500 V ID = 100µA, VGS = 0V
I
SD
= 5A, V
GS
= 0V,
di/dt
= 100A/µs
IGSS ±100 nA VGS = ±30V
IDSS 100 µAV
DS = 500V, VGS = 0V
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
Re(yfs) 5.0 9.0 S VDS = 20V, ID = 5A
RDS(on) 0.85 1.1 ΩVGS = 10V, ID = 5A
Ciss 920 VDS = 10V, f = 1.0MHz,
VGS = 0V
ID = 5A, VDD 250V,
RL = 50Ω, VGS = 10V,
See Figure 2 on Page 5.
Coss
Crss 390
190
25
35
75
pF
tf 55
ns
pF
ns
ns
pF
ns
trr
tr
td(off)
td(on)
80 ns ISD = 10A, VGS = 0V1.5VSD 1.1 V
3.0
48
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 500 V
VGSS ±30 V
ID±10 A
ID (pulse) ±40
(Ta = 25ºC) (Ta = 25ºC)
A
PD35 (Tc = 25ºC) W
EAS 50 mJ
Tch 150 ºC
IAS 10 A
Tstg –55 to +150 ºC
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 30V, L = 940µH, IL = 10A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
2SK3332
V(BR)DSS 150 V ID = 100µA, VGS = 0V
ISD = ±100mA
IGSS ±100 nA VGS = +20V, –10V
IDSS 100 µAV
DS = 150V, VGS = 0V
VTH 1.0 2.0 V VDS = 10V, ID = 250µA
Re(yfs) 6 11 S VDS = 10V, ID = 6A
RDS(on) 150 200 mΩVGS = 10V, ID = 6A
170 230 VGS = 4V, ID = 6A
Ciss 870 VDS = 10V, f = 1.0MHz,
VGS = 0V
ID = 6A, VDD 70V,
RL = 12Ω, VGS = 10V,
See Figure 2 on Page 5.
Coss
Crss 320
210
20
50
85
pF
tf 40
ns
pF
ns
ns
pF
ns
trr
tr
td(off)
td(on)
500 ns ISD = 12A, VGS = 0V1.5VSD 1.0 V
49
VGS=4V
VGS=10V
0
026810412
100
50
150
200
250
ID (A)
RDS(ON) (mΩ)
VGS=4V
VGS=10V
ID=6A
—
50
0050100
150
100
200
300
450
400
RDS(ON) (mΩ)
Tc (ºC)
00 0.5 1.0 1.5
4
2
10
8
6
12
VGS=0V
5V,10V
IDR (A)
VSD (V)
0.05
0.1 0.1 0.5 1 5 2010
1
50
10
ID (A)
Re (yfs) (S)
VDS=10V
25°C
125°C
TC=–55°C
4
2
0
8
6
10
12
012345
ID (A)
VGS (V)
VDS=10V
25°C
–55°C
TC=125°C
06824 10
12
10
8
4
2
6
0
VDS (V)
ID (A)
3.2V
3.4V
2.6V
2.8V
3.0V
VGS = 2.4V
10V
25 20
0
4
6
8
10
VGS (V)
VDS (V)
2
10
ID=6A
ID=12A
VGS=0V
f=1MHz
Ciss
Coss
Crss
0
10 10 20 30 40 50
50
100
500
1000
5000
VDS (V)
Capacitance (pF)
1 5 10 50 100 200
0.1
0.5
1
5
10
50
ID (A)
VDS (V)
I
D
(pulse)max
I
D
max
1ms(1shot)
10ms(1shot)
100µs
(1shot)
DC OPERATION
LIMITED
RDS(ON)
PD (W)
Ta (ºC)
0
10
20
30
0 50 100 150
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 150 V
VGSS +20, –10 V
ID±12 A
ID (pulse) ±48
(Ta = 25ºC) (Ta = 25ºC)
A
PD30 (Tc = 25ºC) W
EAS 100
12
mJ
Tch 150 ºC
IAS A
Tstg –55 to +150 ºC
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 25V, L = 1.2mH, IL = 12A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
(Tc=25ºC)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
With infinite heatsink
Without heatsink
2SK3460
V(BR)DSS 150 V ID = 100µA, VGS = 0V
ISD = ±100mA
IGSS ±100 nA VGS = +20V, –10V
IDSS 100 µAV
DS = 150V, VGS = 0V
VTH 1.0 2.0 V VDS = 10V, ID = 250µA
Re(yfs) 13 20 S VDS = 10V, ID = 9A
RDS(on) 70 95 mΩVGS = 10V, ID = 9A
80 105 VGS = 4V, ID = 9A
Ciss 1900 VDS = 10V, f = 1.0MHz,
VGS = 0V
ID = 9A, VDD 70V,
RL = 7.8Ω, VGS = 10V,
See Figure 2 on Page 5.
Coss
Crss 630
420
25
70
160
pF
tf 75
ns
pF
ns
ns
pF
ns
trr
tr
td(off)
td(on)
620 ns ISD = 18A, VGS = 0V1.5VSD 1.0 V
50
External dimensions 1 ...... FM20
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 150 V
VGSS +20, –10 V
ID±18 A
ID (pulse) ±72
(Ta = 25ºC) (Ta = 25ºC)
A
PD35 (Tc = 25ºC) W
EAS 180
18
mJ
Tch 150 ºC
IAS A
Tstg –55 to +150 ºC
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
*1: PW 100µs, duty cycle 1%
*2: VDD = 25V, L = 930µH, ILp = 18A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
FKV550T
V(BR)DSS 50 V ID = 100µA, VGS = 0V
IGSS ±10 µAV
GS = ±20V
IDSS 100 µAV
DS = 50V, VGS = 0V
VTH 1.0 2.5 V VDS = 10V, ID = 250µA
Re(yfs) 20 S VDS = 10V, ID = 25A
RDS(on) 10 13 mΩVGS = 10V, ID = 25A
Ciss 2700 VDS = 10V, f = 1.0MHz,
VGS = 0V
ID = 25A, VDD 12V,
RL = 0.48Ω, VGS = 10V
See Figure 2 on Page 5.
Coss
Crss 1100
500
20
600
300
pF
tf100
ns
pF
ns
ns
pF
ns
tr
td(off)
td(on)
ISD = 50A, VGS = 0V1.5VSD 1.0 V
51
VGS=10V
0
010 30 4020 50
2
4
6
8
10
12
14
ID (A)
RDS(ON) (mΩ)
VGS=10V
ID=25A
—
50
0050100
150
4
6
12
16
20
RDS(ON) (mΩ)
Tc (ºC)
00 0.2 0.4 0.6 1.00.8 1.2
10
20
30
40
50 VGS=0V
Ta=25°C
IDR (A)
VSD (V)
1
510550
10
50
200
100
ID (A)
Re (yfs) (S)
VDS=10V
25°C
125°C
TC=–55°C
10
20
0
30
40
50
0123456
ID (A)
VGS (V)
VDS=10V
25°C
–55°C
TC=125°C
06824 10
150
100
50
0
VDS (V)
ID (A)
4.5V
4V
VGS = 3.5V
10V 6V
048 20
0
0.4
0.6
0.8
1.0
VGS (V)
VDS (V)
0.2
12 16
ID=25A
ID=50A
VGS=0V
f=1MHz
Ciss
Coss
Crss
0
100 10 20 30 40 50
500
1000
5000
8000
VDS (V)
Capacitance (pF)
0.1
0.1
0.5
10.5 5 10 10050
1
5
10
50
100
200
ID (A)
VDS (V)
ID (pulse) max
PT=
10ms
PT=1ms
R
DS (ON)
LIMITED
PD (W)
Ta (ºC)
0
10
20
30
40
0 50 100 150
(Ta=25°C) (Ta=25°C)
(Ta=25°C)
(Ta=25°C)
(Ta=25°C)
(Single shot pulse)
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 50 V
VGSS ±20 V
ID ±50 A
ID (pulse) ±150
(Ta = 25ºC) (Ta = 25ºC)
A
PD35 (Tc = 25ºC) W
EAS 150
50
mJ
Tch 150 ºC
IAS A
Tstg –55 to +150 ºC
Symbol Unit Conditions
Ratings
typ maxmin
*2
*1
External dimensions 1 ...... FM20
*1: PW 100µs, duty cycle 1%
*2: VDD = 20V, L = 72µH, IAS = 50A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
(Tc=25°C)
With infinite heatsink
Without heatsink
2SJ424
52
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS –60 V(BR) DSS –60 V ID = –250µA, VGS = 0VV
VGSS 20 IGSS 500 nA VGS = 20VV
ID 5 IDSS –250 µAV
DS = –60V, VGS = 0VA
ID (pulse) 20 (Tch 150ºC)
(Ta = 25ºC) (Ta = 25ºC)
VTH –2.0 –4.0 V VDS = –
10V,
ID = –
250
µAA
PD25 (Tc = 25ºC) Re (yfs) 1.0 1.6 S VDS = –10V, ID = –2.5AW
RDS (on) 0.35 0.5 ΩVGS = –10V, ID = –2.5ATch 150
Ciss 270 pF VDS = –25V, f = 1.0MHz,
VGS = 0V
ID = –2.5A, VDD = –30V,
VGS = –10V,
See Figure 3 on Page 5.
ºC
Tstg –55 to +150
Coss 170 pF
ºC
ton 75 ns
toff 35 ns
Symbol Unit Conditions
Ratings
typ maxmin
±±
External dimensions 1 ...... FM20
±
±
±
2SJ425
53
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS –60 V(BR) DSS –60 V ID = –250µA, VGS = 0VV
VGSS 20 IGSS 500 nA VGS = 20VV
ID 8 IDSS –250 µAV
DS = –60V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH –2.0 –4.0 V VDS = –
10V,
ID = –
250
µAA
PD30 (Tc = 25ºC) Re (yfs) 1.8 2.8 S VDS = –10V, ID = –4.0AW
RDS (on) 0.2 0.28 ΩVGS = –10V, ID = –4.0ATch 150
Ciss 580 pF VDS = –25V, f = 1.0MHz,
VGS = 0V
ID = –4.0A, VDD = –30V,
VGS = –10V,
See Figure 3 on Page 5.
ºC
Tstg –55 to +150
Coss 360 pF
ºC
ton 90 ns
toff 45 ns
Symbol Unit Conditions
Ratings
typ maxmin
±±
0
10
V 10V
GS =
6V
5V
V 10V
GS =
0
50
100
150
200
250
–50
00 50 100 150
100
200
300
400
51020
0.1 –0.5 1 5
0.5
1
10 V 10V
DS =
25ºC
125ºC
0
20 10 20 30 40 50
50
100
500
1000
2000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
0.050.5 1 50 100
–0.1
0.5
1
5
10
50 ID (pulse) max
D
I max
1ms
100µs
DC OPERATION
10ms (1shot)
0
10
20
30
0 50 100 150
001234
2
6
8
V 0V
GS =
0
2
3
4
5
V 10V
GS =
I 4A
D=
T 55ºC
C=–
LIMITED
With infinite heatsink
Without heatsink
–
8
–
6
–
4
–
2
–
02
–4
–6
–8
–10
–
–7V
–
–
–
0
8
–
6
–
4
–
2
–
02
–4
–6
–8
–
V 10V
DS =
25ºC
T 125ºC
C=
55ºC
–
1
–
02
–3
–4
–5
–6
–7
–8
–
0.3
5
–– 10
––
–
1
–
–
–
–
––
I 4A
D=–
I 8A
D=–
–
––
–– –––
4
–
–
–
–
–– ––
10V
–
5V
–
510
–
––
–
–
–
–– –– ––
––
–
External dimensions 1 ...... FM20
±
±
32 (Tch 150ºC)
±
(Tc=25ºC)
RDS(ON) (mΩ) RDS(ON) (mΩ)
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
R
DS (ON)
ID – VDS Characteristics (typical)
Re (yfs) – ID Characteristics (typical)
Capacitance
– VDS Characteristics (typical)
IDR – VSD Characteristics (typical) PD – Ta CharacteristicsSafe Operating Area
VDS – VGS Characteristics (typical) RDS(ON) – TC Characteristics (typical)
ID – VGS Characteristics (typical) RDS(ON) – ID Characteristics (typical)
2SJ426 60 15 0.14 FM20
2SK1193 60 45 0.002 MT100
FM20
FM20
FM100
FM100
FM20
FM20
FM20
FM100
FM20
FM20
FM20
FM20
FM20
FM100
FM100
FM100
FM100
2SK1367 400 3 1.80
2SK1368 400 5 1.00
2SK1369 400 10 0.55
2SK1370 400 15 0.30
2SK1711 60 10 0.200
2SK1713 60 22 0.050
2SK1714 60 30 0.028
2SK1715 60 40 0.028
2SK2156A 60 25 0.045
FM20
2SK2207 900 3 5.0
FM100
2SK2208 900 5 3.0
2SK2238 450 1.5 3.50
2SK2239 450 3 2.00
2SK2240 450 5 1.50
2SK2241 450 7 0.95
2SK2242 450 7 0.95
2SK2243 450 10 0.75
2SK2244 450 12 0.55
2SK2245
—
—
—
2SK979 450 10 0.7 MT100
2SK3199
2SK2701
2SK2704
2SK2706
2SK2778
—
—
—
—
2SK2803
2SK2945
2SK2943
2SK3199
2SK3199
2SK2702
2SK2702
2SK2702
2SK2704
2SK2705
450 15 0.45
FM20
2SK2804 2SK3199
450 5 1.5
2SK1366 400 2 3.60 FM20 2SK2803
54
Part Number
Discontinued Products Substitute Part
VDSS (V) ID (A) PackageR
DS (ON)
max
(Ω)
Part Number VDSS (V) ID (A) PackageR
DS (ON)
max
(Ω)
Not for new design Substitute Part
Discontinued part guide
55
MEMO
Contents of this catalog are subject to change due to modification
Sanken Electric Co., Ltd.
1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo
PHONE: 03-3986-6164
FAX: 03-3986-8637
TELEX: 0272-2323 (SANKEN J)
Overseas Sales Offices
●Asia
Sanken Electric Singapore Pte. Ltd.
150 Beach Road, #14-03 The Gateway West,
Singapore 0718
PHONE: 291-4755
FAX: 297-1744
Sanken Electric Hong Kong Co., Ltd.
1018 Ocean Centre, Canton Road,
Kowloon, Hong Kong
PHONE: 2735-5262
FAX: 2735-5494
TELEX: 45498 (SANKEN HX)
Sanken Electric Korea Co., Ltd.
SK Life B/D 6F,
168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea
PHONE: 82-2-714-3700
FAX: 82-2-3272-2145
●North America
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615, U.S.A.
PHONE: (508)853-5000
FAX: (508)853-7861
●Europe
Allegro MicroSystems Europe Limited.
Balfour House, Churchfield Road,
Walton-on-Thames, Surrey KT12 2TD, U.K.
PHONE: 01932-253355
FAX: 01932-246622
PRINTED in JAPAN H1-T03EB0-0011010TA
