MOS FET
Bulletin No.
T03EB0
(Nov., 2000)
Standard Minimum Packaged Quantity
Series
Standard Minimum package Unit
FM20 100
FM100 105
Specify the number of standard minimum
packaged units when placing order.
The information in this publication has been carefully checked and is believed to be
accurate; however, no responsibility is assumed for inaccuracies.
Sanken reserves the right to make changes without further notice to any products herein
in the interest of improvements in the performance, reliability, or manufacturability of its
products. Before placing an order, Sanken advises its customers to obtain the latest
version of the relevant information to verify that the information being relied upon is
current.
Application and operation examples described in this catalog are quoted for the sole
purpose of reference for the use of the products herein and Sanken can assume no
responsibility for any infringement of industrial property rights, intellectual property rights
or any other rights of Sanken or any third party which may result from its use.
When using the products herein, the applicability and suitability of such products for the
intended purpose or object shall be reviewed at the users responsibility.
Although Sanken undertakes to enhance the quality and reliability of its products, the
occurrence of failure and defect of semiconductor products at a certain rate is inevitable.
Users of Sanken products are requested to take, at their own risk, preventative measures
including safety design of the equipment or systems against any possible injury, death,
fires or damages to the society due to device failure or malfunction.
Sanken products listed in this catalog are designed and intended for the use as
components in general purpose electronic equipment or apparatus (home appliances,
office equipment, telecommunication equipment, measuring equipment, etc.).
Before placing an order, the user’s written consent to the specifications is requested.
When considering the use of Sanken products in the applications where higher reliability
is required (transportation equipment and its control systems, traffic signal control
systems or equipment, fire/crime alarm systems, various safety devices, etc.), please
contact your nearest Sanken sales representative to discuss and obtain written
confirmation of your specifications.
The use of Sanken products without the written consent of Sanken in the applications
where extremely high reliability is required (aerospace equipment, nuclear power control
systems, life support systems, etc.) is strictly prohibited.
Anti radioactive ray design is not considered for the products listed herein.
This publication shall not be reproduced in whole or in part without prior written approval
from Sanken.
CAUTION / WARNING
Contents
Storage, characteristic inspection, and handling precautions
.. 2
External dimensions.................................................. 3
Avalanche energy capability....................................... 4
Avalanche energy capability measuring method ............ 5
Product index by part number .................................... 6
Selection guide......................................................... 7
Discontinued part guide
2SK1177
......................................... 8
2SK1178
......................................... 9
2SK1179
........................................ 10
........................................ 24
........................................ 25
2SK2419
........................................ 26
2SK2420
........................................ 27
2SK2421
........................................ 28
2SK2701
........................................ 29
2SK2702
........................................ 30
2SK2703
........................................ 31
2SK2704
........................................ 32
2SK2705
........................................ 33
2SK2706
........................................ 34
2SK2707
........................................ 35
2SK2708
........................................ 36
2SK2709
........................................ 37
2SK2710
........................................ 38
2SK2778
........................................ 39
2SK2779
........................................ 40
2SK2803
........................................ 41
........................................ 42
2SK2805
........................................ 43
2SK2848
2SK2943
2SK2945
2SK3002
2SK3003
2SK3004
2SK3199
2SK3200
2SK3332
2SK3460
FKV550T
........................................ 44
........................................ 45
........................................ 46
........................................ 47
........................................ 48
........................................ 49
........................................ 50
........................................ 51
2SJ424
.......................................... 52
2SJ425
.......................................... 53
2SK1180
........................................ 11
2SK1181
........................................ 12
2SK1183
........................................ 13
2SK1184
........................................ 14
2SK1185
........................................ 15
2SK1186
........................................ 16
2SK1187
........................................ 17
2SK1188
........................................ 18
2SK1189
........................................ 19
2SK1190
........................................ 20
2SK1191
........................................ 21
2SK1192
........................................ 22
2SK1712
........................................ 23
Nch
Pch
1
........................................... 54
Inappropriate storage, characteristic inspection, or
handling may impair the reliability of the device. To ensure
high reliability, observe the following precautions:
It is recommended to store the device at room temper-
ature (between 5 and 35°C) and relative humidity at 40 to
75%. Avoid storing the device in a place where the
temperature or humidity is high or changes greatly.
Store the device in a clean place that is not exposed to
direct sunlight, and is free from corrosive or harmful
gases.
If the device is stored for a long time, check the solder-
ability and lead condition before using the device.
When handling the device, physical grounding is neces-
sary. Wear a wrist strap with a 1 M resistor close to the
body in the wrist strap to prevent electric shock.
Use a conductive table mat or floor mat at the device
handling workbench and to ensure grounding.
When using a curve tracer or other measuring equip-
ment, ground the equipment as well.
When soldering, ground the bit of the soldering iron and
the dip tank to prevent a leakage voltage from damaging
the device.
Store the device in the shipping container or a conduc-
tive container or use aluminum foil to protect the device
from static electricity.
When carrying out characteristic inspections on re-
ceiving products or other occasions, take care to avoid
applying a surge voltage from the measuring equipment
and check the terminals of the measuring equipment for a
short circuit or wiring errors. Measure the device within the
range of its rated values.
When attaching heatsink, apply a small amount of
silicone evenly to the back of the device and both sides of
the insulator to reduce the thermal resistance between the
device and heatsink.
Recommended silicone grease
G746 SHINETSU SILICONE CO., LTD.
YG6260 GE TOSHIBA SILICONE CO., LTD.
SC102
DOW CORNING TORAY SILICONE CO., LTD.
Please select a silicone grease carefully since the oil in
some grease can penetrate the product, which will
result in an extremely short product life.
If screws are not tightened with sufficient torque, this
can increase the thermal resistance and reduce the
radiation effect. Tightening screws with too great a torque
damage the screw thread, deform the heatsink, or twist the
device frame until it is damaged. There, tighten screws with
a torque as shown below (Table 1).
A large contact area between the device and the
heatsink for effective heat radiation is required. To ensure
a large contact area, minimize mounting holes and select a
heatsink with a sufficiently smooth surface and that is free
from burring or metal debris.
When excessive load is exerted on leads, internal
connections may be break. Load exerted in each of the
following directions should be limited to below 1 kg for
TO-220F and 2.5 kg for TO-3PF.
We make several types of lead forming available, please
consult with our personnel when necessary.
Storage, characteristic inspection, and handling precautions
Table 1: Screw Tightening Torque
Package
0.490 to 0.686 N•m (5 to 7 kgfcm)
0.686 to 0.822 N•m (7 to 9 kgfcm)
TO-220F
TO-3PF
Tightening Torque
Directions in which load is exerted on leads
1. Storage precautions
7. Handling precautions to protect power
MOS FET from static damage
2.
Precautions on characteristic inspections
6. Heatsink
8. Load on Leads
9. Lead Forming
4. Screw tightening torque
3. Silicone Grease
2
If soldering is necessary, take care to keep the applica-
tion of heat as brief as possible, and within the following
limits:
260±5ºC for 10 s max
350ºC for 3 s max (soldering iron)
5. Soldering temperature
(Unit: mm)
(17.5)
(13.5)
a
b
GDS
φ3.3±0.2 10.0±0.2
4.0±0.2
8.4±0.2
0.8±0.2
3.9±0.2
1.35±0.15
1.35±0.15
0.85
2.54
2.54
2.2±0.2
0.45 2.4±0.2
4.2±0.2 C0.5
2.8
General product
a: Part Number
b: Lot Number
Weight: Approx 2.0g
Weight: Approx 6.5g
a: Part Number
b: Lot Number
a
b
(16.2)
4.4 1.51.5
φ3.3±0.1 15.6±0.2
23.0±0.3
9.5±0.2
2.15±0.15
5.45±0.1
5.45±0.1
GDS
0.8
0.65 3.35±0.2
3.45±0.2
5.5±0.2
3.0
1.05
1.75±0.15
3.3
1.6 0.8
5.5±0.2
(13.5)
a
b
GDS
φ3.3±0.2 10.0±0.2
4.0±0.2
8.4±0.2
0.8±0.2
3.9±0.2
1.35±0.15
1.35±0.15
0.85
2.54
2.54
2.2±0.2
0.45+0.2
0.1
+0.2
0.1 +0.2
0.1
+0.2
0.1
2.4±0.2
4.2±0.2 C0.5
2.8
16.9±0.2
FM20 (TO-220F)1
1.6
a
b
3.3
16.2
0.8
4.4 1.51.5
φ3.3±0.2 15.6±0.2
23.0±0.3
5.5±0.2
0.8
9.5±0.2
1.75 ±0.15
2.15 ±0.15
1.05
5.45±0.1
5.45±0.1
GDS
0.65 3.35±0.2
3.45±0.2
5.5±0.2
3.0
FM100 (TO-3PF)
2
3
External dimensions
UL approved product
General product UL approved product
+0.2
0.1
+0.2
0.1
+0.2
0.1 +0.2
0.1
When a MOS FET is used for high-speed switching, the
inductive load and wiring inductance may cause a counter
electromotive voltage at cutoff that the device cannot
withstand.
Avalanche energy capability is the non-clamped ability
to withstand damage expressed as energy. As long as the
energy applied to the device at cutoff is within the
guaranteed avalanche energy capability, the device will not
be damaged even if the Drain-Source voltage exceeds the
capability.
For example, a Drain-Source voltage that is within the
guaranteed capability when electrically stationary may
exceed the limit at startup or cutoff. Usually, a snubber
circuit or similar surge absorbing circuit is used to keep the
Drain-Source voltage within the guaranteed capability.
Sanken MOS FETs, however, do not require this kind of
protective circuit because the avalanche energy capability
is guaranteed. Sanken MOS FETs enable the number of
parts to be reduced, saving board area.
* Consult the engineering department of Sanken when
planning to use MOS FETs in avalanche mode.
The EAS Value in the specifications is guaranteed when
the channel temperature Tch is 25ºC. Since the EAS Value
drops as the channel temperature rises, derating
depending on the temperature is necessary.
Fig.B shows the derating curve for single avalanche
energy capability. This is the derating curve of EAS and the
channel temperature (Tch (start)) immediately before the
avalanche occurs in the product, with the EAS value
(maximum rating) at 25ºC as 100%.
For example, if the product temperature is 50ºC, the EAS
value is derated to 64% of the value at 25ºC.
1. What is avalanche energy capability ?
If the current in an inductive load L is ILP at the moment
when the MOS FET is cut off, EAS can be expressed as
follows:
If the value of L is not known in an actual circuit, EAS
can also be calculated from the actual voltage and current
waveforms as follows:
The following calculation is used to determine EAS
where the voltage and current shown in Fig.A are applied
to the MOS FET in a circuit.
Integrate the overlapping section of ID and VDS to calcu-
late IDVDSdt. When the ID waveform is triangular, EAS
will be as follows:
2. EAS calculation method
3. Temperature derating for EAS
This section explains the derating method for continu-
ous avalanche.
Considering continuous avalanche as the repetition of a
single avalanche, the safe operating area (SOA) is deter-
mined using the derating curve shown in Fig. B.
Calculate the energy and Tch (start) of avalanche in the
worst condition and determine SOA using the calculated
data and the derating curve shown in Fig. B. The tempera-
ture rise due to avalanche should not cause the channel
temperature to exceed the maximum rating.
The following is an example of determining SOA judg-
ment by calculation when a MOS FET enters a transient
avalanche state at power-on then changes to a stationary
state.
Supposing that the waveform is as shown in Fig.C until
the MOS FET changes to the stationary state, calculate the
start loss and switching (turn-on/off) Ioss. To simplify the
calculation, the average loss Pa and the last two wave-
forms are used for approximation. (Fig. D)
First, calculate the channel temperature Tch ( ) at time
( ) where the temperature condition is severest.
If the Tch ( ) value is within the maximum rating, there
is no problem as far as the temperature is concerned.
4. Continuous avalanche energy capability
Fig. A
Fig. B
Avalanche energy capability of MOS FET
EAS = L ILp2 VDSS
VDSS VDD
1
2
EAS =
10(A) 550(V) 10(µs) = 27.5(mJ)
* VDD: Supply voltage
EAS = Pst
* Ps: Surge power * t: Surge time
0
0
ID
VDS
10A
550V
(VDSS)
10µs
100
80
60
40
20
025 50 75 100 125 150
Tch (start) (ºC)
EAS (normalized) (%)
EAS Tch (start)
4
Sanken MOS FETs feature guaranteed
avalanche energy capability.
1
2
............................................................
...........................
1
2
ILp = ID max
Then calculate the channel temperature Tch ( 1) imme-
diately before avalanche.
This Tch ( 1) value becomes Tch (start). If the avalanche
energy (EAS = P6t6) is within the value derated from the
guaranteed EAS value at the temperature, there is no
problem as far as the avalanche energy is concerned.
Fig. DFig. C
Fig. 1
Fig. 2
Fig. 3
Nch
Pch
Switching time measuring method
Avalanche energy capability measuring method
Tch ( ) = Ta + Pa rch-c (Tn + T + t1 + t2 + t3)
+ (P1 Pa) rch-c (T + t1 + t2 + t3)
(P1 P2) rch-c (T + t2 + t3)
+ (P3 P2) rch-c (T + t3)
P3 rch-c (T) + P4 rch-c (t4 + t5 + t6)
(P4 P5) rch-c (t5 + t6)
+ (P6 P5) rch-c (t6)
* Ta : Ambient temperature
r
ch-c (t): Transient thermal resistance at pulse width t
V
0V
GS RG
VDS
VDD
IL
L
IL
ILp
VDS
VDD
V(BR) DSS
V
0V
GS
RG
VDS
VDD
ID
RL
(a) Measuring circuit (b) Output waveform
(a) Measuring circuit
P.W. 10µs
=
Duty cycle 1%
VGS
VDS
90%
10%
90%
10%
t
d(on)
ton
t
d(off)
trtoff
tf
V
0V
GS
P.W. 10µs
=
Duty cycle < 1%
RG
VDS
VDD
ID
RL
VGS
VDS
(b) Input-output waveform
90%
10%
90%
10%
t
d(on)
ton
t
d(off)
trtoff
tf
0
Transient Stationary
Avalanche in this section
ID
VDS
T(n)
T(n)
0Pa
P1P2
P3
P4
T
P5
P6
t1t2t3t4t5t6
T' 1
P2
t2
5
EAS = L ILp2 V(BR) DSS
V(BR) DSS VDD
1
2
3
......................................
Tch ( 1) = Ta + Pa rch-c (Tn + T' + t1 + t2 + t3)
+ (P1 Pa) rch-c (T' + t1 + t2 + t3)
(P1 P2) rch-c (T '+ t2 + t3)
+ (P3 P2) rch-c (T' + t3)
P3 rch-c (T') + P4 rch-c (t4 + t5 + t6)
(P4 P5) rch-c (t5 + t6)
+ (P6 P5) rch-c (t6)4
......................................
2SK1177 500 2.5 30 200 3.0 350 FM20 8
2SK1178 500 4.0 35 260 1.5 610 FM20 9
2SK1179 500 8.5 85 400 0.85 1300 FM100 10
2SK1180 500 10 85 500 0.6 1800 FM100 11
2SK1181 500 13 85 660 0.4 2700 FM100 12
2SK1183 200 3 25 36 1.5 140 FM20 13
2SK1184 200 5 30 67 0.8 260 FM20 14
2SK1185 100 5 25 16 0.54 180 FM20 15
2SK1186 100 9 30 32 0.27 350 FM20 16
2SK1187 100 12 35 58 0.16 650 FM20 17
2SK1188 60 10 25 2.1 0.2 300 FM20 18
2SK1189 60 15 30 6.2 0.1 640 FM20 19
2SK1190 60 22 35 17 0.05 1300 FM20 20
2SK1191 60 30 40 38 0.028 2500 FM20 21
2SK1192 60 40 90 38 0.028 2500 FM100 22
2SK1712 60 15 30 6.2 0.1 820 FM20 23
2SK2419 60 25 35 26 0.037 1300 FM20 24
2SK2420 60 30 40 38 0.028 2200 FM20 25
2SK2421 60 40 40 60 0.02 2400 FM20 26
2SK2701 450 7 35 130 1.1 720 FM20 27
2SK2702 450 10 35 300 0.8 1000 FM20 28
2SK2703 450 10 75 300 0.8 1000 FM100 29
2SK2704 450 13 40 400 0.57 1300 FM20 30
2SK2705 450 13 75 400 0.57 1300 FM100 31
2SK2706 450 18 85 700 0.3 2500 FM100 32
2SK2707 600 4.5 35 50 1.85 560 FM20 33
2SK2708 600 7 40 150
85 300
1.1 950 FM20 34
2SK2709 600 8.5 0.85 1200 FM100 35
2SK2710 600 12 85 400 0.55 1900 FM100 36
2SK2778 100 12 30 70 0.175 740 FM20 37
2SK2779 100 20 35 200
30 30
0.08 1630 FM20 38
2SK2803 450 3 2.8 340 FM20 39
80 550
2SK2805 450 15 0.38 2100 FM100 40
2SK2848 600 2 30 10 3.8 290 FM20 41
2SJ424 60 5 25 0.5 270 FM20 52
2SJ425 60 8 30 0.28 580 FM20 53
2SK2943 900 3 30 60 5.0 600 FM20 42
2SK2945 900 5 35 120 3.0 880 FM20 43
2SK3002 200 8 30 55 0.35 450 FM20 44
2SK3003 200 18 35 120 0.175 850 FM20 45
2SK3004 250 18 35 120 0.25 850 FM20 46
2SK3199 500 5 30 35 1.5 650 FM20 47
2SK3200 500 10 35 50 1.1 920 FM20 48
2SK3332 150 12 30 100 0.2 870 FM20 49
2SK3460 150 18 35 180 0.095 1900 FM20 50
FKV550T 50 50 35 150 0.013 2700 FM20 51
6
Product index by part number
Parameter
Part Number
Absolute maximum ratings
Electrical Characteristics (Ta=25ºC)
VDSS IDEAS Package Page
PD
(Tc=25ºC) RDS(ON) max
(VGS=10V
)
Ciss
(typ)
(V) (A) (W) (mJ) () (pF)
: Under development
: UL recognized parts are available (File No. 117753). Each UL recognized parts is marked with a I , following its product number.
2SK1188
60
10 0.2 FM20 18
FKV550T
50 50 13m
FM20 51
19
23
20
24
21
25
22
26
15
16
17
37
38
13
14
39
27
28
29
30
31
40
32
8
9
10
11
12
41
33
34
35
36
42
43
2SK1189
15 0.1 FM20
2SK1712
15 0.1 FM20
2SK1190
22 50m
FM20
2SK2419
25 37m
FM20
2SK1191
30 28m
FM20
2SK2420
30 28m
FM20
2SK1192
40 28m
FM100
2SK2421
40 20m
FM20
2SK1185
100
5 0.54 FM20
2SK1186
9 0.27 FM20
2SK1187
12 0.16 FM20
2SK2778
12 0.175 FM20
2SK2779
20 80m
FM20
2SK1183
200
3 1.5 FM20
2SK1184
5 0.8 FM20
44
2SK3002
8 0.35 FM20
45
2SK3003
18 0.175 FM20
49
50
2SK3332
150 12 0.2 FM20
2SK3460
18 0.095 FM20
2SK2803
450
3 2.8 FM20
46
2SK3004
250 18 0.25 FM20
2SK2701
7 1.1 FM20
2SK2702
10 0.8 FM20
2SK2703
10 0.8 FM100
2SK2704
13 0.57 FM20
2SK2705
13 0.57 FM100
2SK2805
15 0.38 FM100
2SK2706
18 0.3 FM100
2SK1177
500
2.5 3 FM20
2SK1178
4 1.5 FM20
2SK1179
8.5 0.85 FM100
47
2SK3199
5 1.5 FM20
2SK1180
10 0.6 FM100
2SK1181
13 0.4 FM100
48
2SK3200
10 1.1 FM20
2SK2848
600
2 3.8 FM20
2SK2707
4.5 1.85 FM20
2SK2708
7 1.1 FM20
2SK2709
8.5 0.85 FM100
2SK2710
12 0.55 FM100
2SK2943
900 3 5.0 FM20
2SK2945
5 3.0 FM20
: Logic drive
Nch MOS FET
2SJ424
60 5 0.5 FM20 52
53
2SJ425
8 0.28 FM20
Pch MOS FET
7
Selection Guide
VDSS
(V) ID
(A) PackagePart Number Page
RDS(ON)
() max VDSS
(V) ID
(A) PackagePart Number Page
RDS(ON)
() max
8
2SK1177
Electrical Characteristics
V(BR) DSS 500 V ID = 250µA, VGS = 0V
IGSS ±500 nA VGS = ±20V
IDSS 250 µAV
DS = 500V, VGS = 0V
(Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 250µA
Re (yfs) 1.5 2.3 S VDS = 10V, ID = 1.4A
RDS (on) 2.6 3.0 VGS = 10V, ID = 1.4A
Ciss 350 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 1.4A, VDD = 250V,
VGS = 10V,
See Figure 2 on Page 5.
Coss 54 pF
ton 50 ns
toff 140 ns
Symbol Unit Conditions
Ratings
typ maxmin
01020
3.0
2.0
1.0
0
5.5V
5V
V 10V
GS =
0
01.0 2.0 3.0
1
2
3
4
5
50
00 50 100 150
1
2
3
4
5
6
2
1.0
520
0
2.0
3.0 V 10V
DS =
25ºC
125ºC
0.05
0.3 0.1 0.5 1 5
0.5
1
5
10 V 10V
DS =
25ºC
125ºC
0
10
10 20 30 40 50
50
100
500
1000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
3
0.03 5 10 50 100 500 1000
0.1
0.5
1
5
10
20 (Tc=25ºC)
ID (pulse) max
D
I max
1ms
100µs
DC OPERATION
RDS (ON)
0
10
20
30
0 50 100 150
00 0.5 1.0 1.5
1.0
2.0
3.0
V 0V
GS =
5V,10V
0246810
0
4
6
8
10
I 1.5A
D=
V 10V
GS =
I 1.5A
D=
RDS(ON) () RDS(ON) ()
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
T 55ºC
C=
T 55ºC
C=
LIMITED
With infinite heatsink
Without heatsink
V 4.5V
GS =
10V
2
10
I 2.5A
D=
5
External dimensions 1......FM20
ID VDS Characteristics (typical)
Re (yfs) ID Characteristics (typical)
Capacitance VDS Characteristics (typical)
IDR VSD Characteristics (typical) PD Ta CharacteristicsSafe Operating Area
VDS VGS Characteristics (typical) RDS(ON) TC Characteristics (typical)
ID VGS Characteristics (typical) RDS(ON) ID Characteristics (typical)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
Absolute Maximum Ratings
Symbol Ratings Unit
VDSS 500 V
VGSS ±20 V
ID±2.5 A
ID (pulse) ±10 (Tch 150ºC)
(Ta = 25ºC)
A
PD30 (Tc = 25ºC) W
EAS 200 mJ
Tch 150
*: VDD = 50V, L = 60mH, IL = 2.5A, unclamped,
See Figure 1 on Page 5.
ºC
Tstg 55 to +150 ºC
*
2SK1178
9
Absolute Maximum Ratings Electrical Characteristics
External dimensions 1 ...... FM20
Symbol Ratings Unit
VDSS 500 V(BR) DSS 500 V ID = 250µA, VGS = 0VV
VGSS ±20 IGSS ±500 nA VGS = ±20VV
ID±4.0 IDSS 250 µAV
DS = 500V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 250µAA
PD35 (Tc = 25ºC) Re (yfs) 2.4 3.7 S VDS = 10V, ID = 2.0AW
EAS 260 RDS (on) 1.3 1.5 VGS = 10V, ID = 2.0AmJ
Tch 150
*: VDD = 50V, L = 28mH, IL = 4.0A, unclamped,
See Figure 1 on Page 5.
Ciss 610 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 2.0A, VDD = 250V,
VGS = 10V,
See Figure 2 on Page 5.
ºC
Tstg 55 to +150 Coss 91 pFºC
ton 50 ns
toff 120 ns
Symbol Unit Conditions
Ratings
typ maxmin
*
01020
5
3
1
0
6V 5.5V
5V
V 10V
GS =
0
012 4
0.5
1.0
1.5
2.0
50
00 50 100 150
1
2
4
5
2
1
510
0
2
5V 10V
DS =
25ºC
125ºC
0.05
0.3 0.1 0.5 1 5
0.5
1
5
10 V 10V
DS =
25ºC
125ºC
0
10 10 20 30 40 50
50
100
500
1000
3000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
3
0.05 5 10 50 100 500 1000
0.1
0.5
1
5
10
50
ID (pulse) max
D
I max
100µs
DC OPERATION
1ms (1shot)
0
10
20
30
40
0 50 100 150
00 0.5 1.5
1
2
5
V 0V
GS =
5V,10V
0246810
0
4
6
8
10
I 4A
D=
I 2A
D=
V 10V
GS =
I 2A
D=
T 55ºC
C=
T 55ºC
C=
LIMITED
V 4.5V
GS =
10V
2
4
3
4
3
3
2
20
3
4
1.0
With infinite heatsink
±16 (Tch 150ºC)
(Tc=25ºC)
RDS(ON) () RDS(ON) ()
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
ID VDS Characteristics (typical)
Re (yfs) ID Characteristics (typical)
Capacitance
VDS Characteristics (typical)
IDR VSD Characteristics (typical) PD Ta CharacteristicsSafe Operating Area
VDS VGS Characteristics (typical) RDS(ON) TC Characteristics (typical)
ID VGS Characteristics (typical) RDS(ON) ID Characteristics (typical)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
R
DS (ON)
Without heatsink
10
2SK1179
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 500 V(BR) DSS 500 V ID = 250µA, VGS = 0VV
VGSS ±20 IGSS ±500 nA VGS = ±20VV
ID±8.5 IDSS 250 µAV
DS = 500V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 250µAA
PD85 (Tc = 25ºC) Re (yfs) 5.1 7.7 S VDS = 10V, ID = 4.5AW
EAS 400 RDS (on) 0.70 0.85 VGS = 10V, ID = 4.5AmJ
Tch 150
*: VDD = 50V, L = 10mH, IL = 8.5A, unclamped,
See Figure 1 on Page 5.
Ciss 1300 pF VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 4.5A, VDD = 250V,
VGS = 10V,
See Figure 2 on Page 5.
ºC
Tstg 55 to +150 Coss 180 pFºC
ton 60 ns
toff 110 ns
Symbol Unit Conditions
Ratings
typ maxmin
*
01020
10
4
2
0
V 4.5V
GS =
5.5V
5V
V 10V
GS =
0
012 10
0.5
1.0
1.5
50
0050100
150
0.5
1.0
1.5
2.0
2
2
51020
0
4
10 V 10V
DS =
25ºC
125ºC
0.05
0.3 0.1 0.5 1 10
0.5
1
10
20 V 10V
DS =
25ºC
125ºC
0
20 10 20 30 40 50
50
100
500
1000
5000 V 0V
GS
=
f 1MHz
=
Ciss
Coss
Crss
3
0.03 5 10 50 100 500 1000
0.1
0.5
1
5
10
50
I
D
(pulse) max
D
I max
100µs
DC OPERATION
1ms (1shot)
R
DS (ON)
0
20
50
80
90
0 50 100 150
00 0.2 0.4 0.6 1.0 1.4
4
8
10
V 0V
GS =
5V,10V
0246810
0
2
4
6
10
I 8.5A
D=
V 10V
GS =
I 4.5A
D=
T 55ºC
C=
T 55ºC
C=
LIMITED
With infinite heatsink
Without heatsink
6
810V
515
6
8
3456789
5
5
8
I 4.5A
D=
70
60
40
10
30
0.8 1.2
6
2
External dimensions 2 ...... FM100
±34 (Tch 150ºC)
(Tc=25ºC)
RDS(ON) () RDS(ON) ()
Re (yfs) (S)
Capacitance (pF)
Ta (ºC)
VDS (V)
ID VDS Characteristics (typical)
Re (yfs) ID Characteristics (typical)
Capacitance VDS Characteristics (typical)
IDR VSD Characteristics (typical) PD Ta CharacteristicsSafe Operating Area
VDS VGS Characteristics (typical) RDS(ON) TC Characteristics (typical)
ID VGS Characteristics (typical) RDS(ON) ID Characteristics (typical)
VDS (V)VDS (V) VSD (V)
IDR (A)
ID (A)
PD (W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
ID (A)
ID (A)
11
2SK1180
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 500 V(BR) DSS 500 V ID = 250µA, VGS = 0VV
VGSS ±20 IGSS ±500 nA VGS = ±20VV