HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200201
Issued Date : 2001.04.01
Revised Date : 2005. 08.16
Page No. : 1/4
HBD437D HSMC Product Specification
HBD437D
COMPLEMENTARY SILICON POWER TRANSISTORS
Description
The HBD437D is silison epitaxial-base NPN power transistor in TO-126ML plastic
package, intented for use in medium power linear and switching applications. The
complementary PNP type is HBD438D.
Absolute Maximum Ratings (TA=25°C)
Symbol Parametor Value Unit
VCBO Collector-Base Voltage (IE=0) 45 V
VCES Collector-Emitter Voltage (VBE=0) 45 V
VCEO Collector-Emitter Voltage (IB=0) 45 V
VEBO Emitter-Base Voltage (IC=0) 5 V
ICCollector Current 4 A
ICM Collector Peak Current (t≤10ms) 7A
IBBase Current 1 A
TC=25°C20 W
PDTotal Dissipation at TA=25°C1.5 W
Tstg Storage Temperature -55 to 150 °C
TJMax. Operating Junction Temperature 150 °C
Thermal Data
Rthj-case Thermal Resistance Junction-case Max. 5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max. 83 °C/W
Electrical Characteristics (TA=25°C, unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off Current (IE=0) VCB=45V - - 100 uA
ICES Collector Cut-off Current (VBE=0) VCE=45V - - 100 uA
IEBO Emitter Cut-off Current (IC=0) VEB=5V - - 1 mA
*VCEO(sus) Collector-Emitter Sustaining Voltage IC=100mA, IB=0 45 - - V
*VCE(sat) Collector-Emitter Saturation Volt age IC=2A, IB=0.2A - 0.4 0.6 V
IC=10mA,VCE=5V - 0.58 - V
*VBE Base-Emitter Voltage IC=2A, VCE=1V - - 1.2 V
IC=10mA, VCE=5V 30 130 -
IC=0.5A, VCE=1V 85 140 -*hFE DC Current Gain IC=2A, VCE=1V 40 - -
*hFE1/hFE2 Matched Pair IC=0.5A, VCE=1V - - 1.4
fTTransition Frequency IC=0.25 A, VCE=1V 3 - - MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
TO-126ML
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200201
Issued Date : 2001.04.01
Revised Date : 2005. 08.16
Page No. : 2/4
HBD437D HSMC Product Specification
Characteristics Curve
Safe Operating Area
0.01
0.1
1
10
1 10 100
Forward Voltag e- V
CE
(V)
Collector Current - I
C
(A)
1ms 100ms 1s
Current Gain & Collector Current
10
100
1000
1 10 100 1000 10000
Coll e c tor Cur rent I
C
(mA)
hFE
hFE @ V
CE
=1V
25
o
C
75
o
C125
o
C
Current Gain & Collector Current
10
100
1000
1 10 100 1000 10000
Coll e c tor Cur rent I
C
(mA)
hFE
hFE @ V
CE
=5V
25
o
C
75
o
C
125
o
C
Saturation Voltage & Collect or Curren t
10
100
1000
1 10 100 1000 10000
Coll e c tor Cur rent I
C
(mA)
Satur a t ion Voltag e ( mV)
V
CE(sat)
@ I
C
=10I
B
75
o
C
125
o
C
25
o
C
On Vol ta ge & C o llect or Curren t
100
1000
10000
1 10 100 1000 10000
Coll e c tor Cur rent I
C
(mA)
O n Volta ge ( m V)
VBE(on) @ VCE=1V
125oC
75oC
25oC
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200201
Issued Date : 2001.04.01
Revised Date : 2005. 08.16
Page No. : 3/4
HBD437D HSMC Product Specification
TO-126ML Dimension
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat ion assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al Pa rk Hsi n-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
D
I
E
B
G
F
A
N
C
H
321
M
J
K
L
3-Lead TO-126ML
Plastic Package
HSMC Package Code: D
Marking:
Control Code
Date Code
HD
437
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
Note: Green label is used for pb-free packing
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Ep oxy resin family,
flammability solid burning class: UL94V-0
DIM Min. Max.
A 7.74 8.24
B 10.87 11.37
C 0.88 1.12
D 1.28 1.52
E 3.50 3.75
F 2.61 3.37
G13 -
H 1.18 1.42
I 2.88 3.12
J 0.68 0.84
K - 2.30
L 3.44 3.70
M 1.88 2.14
N 0.50 0.51
*: Typical, Unit: mm
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200201
Issued Date : 2001.04.01
Revised Date : 2005. 08.16
Page No. : 4/4
HBD437D HSMC Product Specification
Solderi ng Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Hum idity=65%±15%
2. Reflow soldering of surface-mount devices
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate (TL to TP)<3
oC/sec <3oC/sec
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
100oC
150oC
60~120 sec
150oC
200oC
60~180 sec
Tsmax to TL
- Ramp-up Rate <3oC/sec <3oC/sec
T ime mai n tained abov e :
- Temperature (TL)
- Ti me (tL)183oC
60~150 sec 217oC
60~150 sec
Peak Temperature (TP) 240oC +0/-5oC 260oC +0/-5oC
Time within 5oC of actual Peak
Temperature (tP)10~30 sec 20~40 sec
Ramp- down Rate <6oC/sec <6oC/sec
Time 25oC to Peak Temperature <6 minutes <8 minutes
3. Flow (wave) soldering (solder dipping)
Products Peak temperature Dipping time
Pb devices. 245oC ±5oC 5sec ±1sec
Pb-Free de vic es . 260oC +0/-5oC5sec ±1sec
Figure 1: Temper ature prof ile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25 t 25
o
C to Peak
Time
Temperature
