©2002 Fairchild Semiconductor Corporation Rev. B, July 2002
2N5307
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 12 V
ICCollector Current - Continuous 1.2 A
TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 °C
2N5307
NPN General Purpose Amplifier
This device designed for applications requiring extremely high current
gain at currents to 1.0A.
Sourced from Process 05.
See MPSA14 for charac teristics.
TO-92
1. E mi tter 2. C o ll e ctor 3. B a se
1
©2002 Fairchild Semiconductor Corporation Rev. B, July 2002
2N5307
Electrical Characteristics Ta=25°C unless otherwise noted
* Pulse Test: Pulse 300µs, Duty Cycle 2.0%
Thermal Charac teris tics TA=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
BV(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 40 V
BV(BR)CBO Collector-Base Breakd own Voltage IC = 0.1µA, IE = 0 40 V
BV(BR)EBO Emitter-Base Breakdown Voltage IE = 0.1µA, IC = 0 1 2 V
ICBO Collector Cut-off Current VCB = 40V, IE = 0
VCB = 40 V, IE = 0, TA = 100°C0.1
20 µA
µA
IEBO Reverse Base Current VEB = 12V, IC = 0 0.1 µA
On Characteristics *
hFE DC Current Gain VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 100mA 2,000
6,000 20,000
VCE(sat) Collector-Emitter Saturation Voltage IC = 200mA, IB = 0.2mA 1.4 V
VBE(sat) Base-Emitter Saturation Voltage IC = 200m A, IB = 0.2mA 1.6 V
VBE(on) Ba se-Emitter On Voltage IC = 200mA,VCE = 5.0V 1.5 V
Small Signal Characteristics
Cob Output Capacitance VCB = 10V, f = 1.0MHz 10 pF
hfe Small -Signal Current Gain IC = 2.0mA, VCE = 5.0V,
f = 1.0kHz
IC = 2.0mA, VCE = 5.0V,
f = 10MHz
2,000
6.0
Symbol Parameter Max. Units
PDTotal Device Dissipation
Derate above 25°C625
5.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
2N5307
Package Dimensions
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B, July 2002
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
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OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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Definition of Terms
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Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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In Design
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