2N5307_D74Z - Fairchild Semiconductor

2N5307

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 40 V

VCBO Collector-Base Voltage 40 V

VEBO Emitter-Base Voltage 12 V

ICCollector Current - Continuous 1.2 A

TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 °C

2N5307

NPN General Purpose Amplifier

• This device designed for applications requiring extremely high current

gain at currents to 1.0A.

• Sourced from Process 05.

• See MPSA14 for charac teristics.

TO-92

1. E mi tter 2. C o ll e ctor 3. B a se

2N5307

Electrical Characteristics Ta=25°C unless otherwise noted

* Pulse Test: Pulse ≤ 300µs, Duty Cycle ≤ 2.0%

Thermal Charac teris tics TA=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units

Off Characteristics

BV(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 40 V

BV(BR)CBO Collector-Base Breakd own Voltage IC = 0.1µA, IE = 0 40 V

BV(BR)EBO Emitter-Base Breakdown Voltage IE = 0.1µA, IC = 0 1 2 V

ICBO Collector Cut-off Current VCB = 40V, IE = 0

VCB = 40 V, IE = 0, TA = 100°C0.1

20 µA

µA

IEBO Reverse Base Current VEB = 12V, IC = 0 0.1 µA

On Characteristics *

hFE DC Current Gain VCE = 5.0V, IC = 2.0mA

VCE = 5.0V, IC = 100mA 2,000

6,000 20,000

VCE(sat) Collector-Emitter Saturation Voltage IC = 200mA, IB = 0.2mA 1.4 V

VBE(sat) Base-Emitter Saturation Voltage IC = 200m A, IB = 0.2mA 1.6 V

VBE(on) Ba se-Emitter On Voltage IC = 200mA,VCE = 5.0V 1.5 V

Small Signal Characteristics

Cob Output Capacitance VCB = 10V, f = 1.0MHz 10 pF

hfe Small -Signal Current Gain IC = 2.0mA, VCE = 5.0V,

f = 1.0kHz

IC = 2.0mA, VCE = 5.0V,

f = 10MHz

2,000

6.0

Symbol Parameter Max. Units

PDTotal Device Dissipation

Derate above 25°C625

5.0 mW

mW/°C

RθJC Thermal Resistance, Junction to Case 83.3 °C/W

RθJA Thermal Resistance, Junction to Ambient 200 °C/W

2N5307

Package Dimensions

Dimensions in Millimeters

0.46 ±0.10

1.27TYP

(R2.29)

3.86MAX

[1.27 ±0.20]1.27TYP

[1.27 ±0.20]

3.60 ±0.20

14.47 ±0.40

1.02 ±0.10

(0.25) 4.58 ±0.20

4.58 +0.25

–0.15

0.38 +0.10

–0.05

0.38 +0.10

–0.05

TO-92

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

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