2N7002KT/R - NXP Semiconductors / Philips Semiconductors

2N7002K

TrenchMOS™ logic level FET

Rev. 01 — 20 October 2003 Product data

M3D088

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™ technology.

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

■Logic level compatible ■Very fast switching

■Subminiature surface mount package ■Gate-source ESD protection diodes.

■Relay driver ■High speed line driver.

■VDS ≤60 V ■ID≤340 mA

■Ptot ≤0.83 W ■RDSon ≤3.9 Ω.

Table 1: Pinning - SOT23, simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g)

SOT23

2 source (s)

3 drain (d)

MSB003

Top view

03ab60

Philips Semiconductors 2N7002K

TrenchMOS™ logic level FET

Product data Rev. 01 — 20 October 2003 2 of 12

3. Ordering information

4. Limiting values

Table 2: Ordering information

Type number Package

Name Description Version

2N7002K SOT23 Plastic surface mounted package; 3 leads. SOT23

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage (DC) 25 °C≤Tj≤150 °C - 60 V

VDGR drain-gate voltage (DC) 25 °C≤Tj≤150 °C; RGS =20kΩ-60V

VGS gate-source voltage (DC) - ±15 V

IDdrain current (DC) Tsp =25°C; VGS =10V;Figure 2 and 3- 340 mA

Tsp = 100 °C; VGS =10V;Figure 2 - 215 mA

IDM peak drain current Tsp =25°C; pulsed; tp≤10 µs; Figure 3 - 680 mA

Ptot total power dissipation Tsp =25°C; Figure 1 - 0.83 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −65 +150 °C

Source-drain diode

ISsource (diode forward) current (DC) Tsp =25°C - 340 mA

ISM peak source (diode forward) current Tsp =25°C; pulsed; tp≤10 µs - 680 mA

Electrostatic discharge voltage

Vesd electrostatic discharge voltage Human Body Model 1; C = 100 pF; R = 1.5 kΩ-1kV

Philips Semiconductors 2N7002K

TrenchMOS™ logic level FET

Product data Rev. 01 — 20 October 2003 3 of 12

Fig 1. Normalized total power dissipation as a

function of solder point temperature. Fig 2. Normalized continuous drain current as a

function of solder point temperature.

Tsp =25°C; IDM is single pulse; VGS =10V

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

03aa17

120

0 50 100 150 200

(%)

Tsp (°C)

Pder

03aa25

120

0 50 100 150 200

Tsp (°C)

Ider

(%)

Pder Ptot

Ptot 25 C

()

----------------------- 100%×=Ider ID

ID25C

()

------------------- 100%×=

03an66

10-2

10-1

1 10 102

VDS (V)

(A)

100 ms

10 ms

Limit RDSon = VDS/ ID

1 ms

tp = 10 µs

100 µs

Philips Semiconductors 2N7002K

TrenchMOS™ logic level FET

Product data Rev. 01 — 20 October 2003 4 of 12

5. Thermal characteristics

5.1 Transient thermal impedance

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-sp) thermal resistance from junction to solder point Figure 4 - - 150 K/W

Rth(j-a) thermal resistance from junction to ambient minimum footprint;

mounted on a printed-circuit board - 350 - K/W

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.

03aa39

102

103

10-5 10-4 10-3 10-2 10-1 1 10

tp (s)

Zth(j-sp)

(K/W)

single pulse

δ = 0.5

0.2

0.1

0.05

0.02

δ =

Philips Semiconductors 2N7002K

TrenchMOS™ logic level FET

Product data Rev. 01 — 20 October 2003 5 of 12

6. Characteristics

Table 5: Characteristics

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage ID=10µA; VGS =0V

Tj=25°C 6075- V

Tj=−55 °C 55--V

V(BR)GSS drain-source breakdown voltage IG=±1 mA; VDS = 0 V 16 22 - V

VGS(th) gate-source threshold voltage ID= 1 mA; VDS =V

GS;Figure 9 V

Tj=25°C 12- V

Tj= 150 °C 0.6 - - V

Tj=−55 °C - - 3.5 V

IDSS drain-source leakage current VDS =48V; V

GS =0V

Tj=25°C - 0.01 1 µA

Tj= 150 °C --10µA

IGSS gate-source leakage current VGS =±10 V; VDS = 0 V - 50 500 nA

RDSon drain-source on-state resistance VGS = 10 V; ID= 500 mA; Figure 7 and 8

Tj=25°C - 2.8 3.9 Ω

Tj= 150 °C - 5.2 7.2 Ω

VGS = 4.5 V; ID= 200 mA; Figure 7 and 8- 3.8 5.3 Ω

Dynamic characteristics

Ciss input capacitance VGS =0V; V

DS = 10 V; f = 1 MHz;

Figure 11 - 1340pF

Coss output capacitance - 8 30 pF

Crss reverse transfer capacitance - 4 10 pF

ton turn-on time VDD =50V; R

L= 250 Ω;

VGS =10V;R

G=50Ω; RGS =50Ω- 3 10 ns

toff turn-off time - 9 15 ns

Source-drain diode

VSD source-drain (diode forward) voltage IS= 300 mA; VGS =0V;Figure 12 - 0.93 1.5 V

trr reverse recovery time IS= 300 mA; dIS/dt = −100 A/µs;

VGS =0V; V

R=25V -30-ns

Qrrecovered charge - 30 - nC

Philips Semiconductors 2N7002K

TrenchMOS™ logic level FET

Product data Rev. 01 — 20 October 2003 6 of 12

Tj=25°CT

j=25°C and 150 °C; VDS >IDxR

DSon

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values. Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

03an70

0.1

0.2

0.3

0.4

0.5

0 0.5 1 1.5 2

VDS (V)

(A)

3.5 V

Tj = 25 °CVGS = 10V

4 V

4.5 V

3 V

6 V

03an72

0.1

0.2

0.3

0.4

0.5

0246

VGS (V)

(A) VDS > ID x RDSon

Tj = 25 °C150 °C

03an71

0 0.1 0.2 0.3 0.4 0.5

ID (A)

RDSon

(Ω)VGS = 3.5 V Tj = 25 °C

4.5 V

4 V

10 V

6 V

03aa28

0.6

1.2

1.8

2.4

-60 0 60 120 180

Tj (°C)

aRDSon

RDSon 25 C

()

-----------------------------

Philips Semiconductors 2N7002K

TrenchMOS™ logic level FET

Product data Rev. 01 — 20 October 2003 7 of 12

ID= 1 mA; VDS =V

GS Tj=25°C; VDS =5V

Fig 9. Gate-source threshold voltage as a function of

junction temperature. Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

VGS = 0 V; f = 1 MHz

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

03aa34

0.6

1.2

1.8

2.4

-60 0 60 120 180

Tj (°C)

VGS(th)

(V) typ

min

03aa37

10-6

10-5

10-4

10-3

10-2

10-1

0 0.6 1.2 1.8 2.4

VGS (V)

(A)

typmin

03aa46

102

10-1 1 10 102

VDS (V)

(pF)

Ciss

Coss

Crss

Philips Semiconductors 2N7002K

TrenchMOS™ logic level FET

Product data Rev. 01 — 20 October 2003 8 of 12

Tj=25°C and 150 °C; VGS =0V I

D= 0.5 A; VDD =48V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

03an73

0.1

0.2

0.3

0.4

0.5

0 0.3 0.6 0.9 1.2

VSD (V)

(A)

Tj = 25 °C

150 °C

VGS = 0 V

03ab09

0 0.3 0.6 0.9 1.2

QG (nC)

VGS

(V)

ID = 0. 5A

VDD = 48 V

Tj = 25 °C

Philips Semiconductors 2N7002K

TrenchMOS™ logic level FET

Product data Rev. 01 — 20 October 2003 9 of 12

7. Package outline

Fig 14. SOT23.

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

99-09-13

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT23

Philips Semiconductors 2N7002K

TrenchMOS™ logic level FET

Product data Rev. 01 — 20 October 2003 10 of 12

8. Revision history

Table 6: Revision history

Rev Date CPCN Description

01 20031020 Product data (9397 750 11703)

9397 750 11703

Philips Semiconductors 2N7002K

TrenchMOS™ logic level FET

Product data Rev. 01 — 20 October 2003 11 of 12

9397 750 11703

Philips Semiconductors 2N7002K

TrenchMOS™ logic level FET

Product data Rev. 01 — 20 October 2003 11 of 12

Contact information

For additional information, please visit http://www.semiconductors.philips.com.

For sales ofﬁce addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.Fax: +31 40 27 24825

9. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

10. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

11. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

licence or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

12. Trademarks

TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.

Level Data sheet status[1] Product status[2][3] Deﬁnition

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

© Koninklijke Philips Electronics N.V. 2003.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 20 October 2003 Document order number: 9397 750 11703
Contents
Philips Semiconductors 2N7002K
TrenchMOS™ logic level FET
1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . .  1
1.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . .  1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  1
1.3 Applications  . . . . . . . . . . . . . . . . . . . . . . . . . . .  1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . .  1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . .  1
3 Ordering information. . . . . . . . . . . . . . . . . . . . .  2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .  2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . .  4
5.1 Transient thermal impedance . . . . . . . . . . . . . .  4
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . .  5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .  9
8 Revision history. . . . . . . . . . . . . . . . . . . . . . . .  10
9 Data sheet status. . . . . . . . . . . . . . . . . . . . . . .  11
10 Deﬁnitions  . . . . . . . . . . . . . . . . . . . . . . . . . . . .  11
11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .  11
12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .  11