9261 Owensmouth Ave.
Chatsworth, Ca 91311
Phone: (818) 701-4933
Fax: (818) 701-4939 MMBT2222A
NPN General
Purpose Amplifier
SOT-23
Suggested Solder
Pad Layout
Features
• Surface Mount SOT-23 Package
• Capable of 350mWatts of Power Dissipation
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.110 .120 2.80 3.04
B.083 .098 2.10 2.64
C.047 .055 1.20 1.40
D.035 .041 .89 1.03
E.070 .081 1.78 2.05
F.018 .024 .45 .60
G.0005 .0039 .013 .100
H.035 .044 .89 1.12
J.003 .007 .085 .180
K.015 .020 .37 .51
Santa Ana: (714) 979-8220 Scottsdale: (602) 941-6300 Colorado: (303) 469-2161 Watertown: (617) 926-0404 Chatsworth: (818) 701-4933
Sertech Labs: (617) 924-9280 Ireland: (353) 65-40044 Bombay: (91) 22-832-002 Hong Kong: (852) 2692-1202
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage*
(IC=10mAdc, IB=0) 40 Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=10µAdc, IE=0) 75 Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=10µAdc, IC=0) 6.0 Vdc
IBL Base Cutoff Current
(VCE=60Vdc, V BE=3.0Vdc) 20 nAdc
ICEX Collector Cutoff Current
(VCE=60Vdc, V BE=3.0Vdc) 10 nAdc
ON CHARACTERISTICS
hFE DC Current Gain*
(IC=0.1mAdc, VCE=10Vdc)
(IC=1.0mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=1.0Vdc)
(IC=500mAdc, VCE=10Vdc)
35
50
75
100
50
40
300
VCE(sat) Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc) 0.3
1.0 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc) 0.6 1.2
2.0 Vdc
SMALL-SIGNAL CHARACTERISTICS
fTCurrent Gain-Bandwidth Product
(IC=20mAdc, VCE=20Vdc, f=100MHz) 300 MHz
Cobo Output Capacitance
(VCB=10Vdec, IE=0, f=100kHz) 8.0 pF
Cibo Input Capacitance
(VBE=0.5Vdc, IC=0, f=100kHz) 25 pF
NF Noise Figure
(IC=100µAdc, VCE=10Vdc, R S=1.0kΩ
f=1.0kHz) 4.0 dB
SWITCHING CHARACTERISTICS
td Delay Time (VCC=30Vdc, V BE=0.5Vdc 10 ns
tr Rise Time IC=150mAdc, IB1=15mAdc) 25 ns
ts Storage Time (VCC=30Vdc, IC=150mAdc 225 ns
tf Fall Time IB1=IB2=15mAdc) 60 ns
*Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.037
.950
1 P
C
B E
Pin Configuration
Top View
K
A
B
C
D
E
F
G
H
J
MMBT2222A
Santa Ana: (714) 979-8220 Scottsdale: (602) 941-6300 Colorado: (303) 469-2161 Watertown: (617) 926-0404 Chatsworth: (818) 701-4933
Sertech Labs: (617) 924-9280 Ireland: (353) 65-40044 Bombay: (91) 22-832-002 Hong Kong: (852) 2692-1202
DC Current Gain vs Collector Current
hFE
IC (mA)
80
160
240
320
400
480
0.1 110 100
Input and Output Capacitance vs
Reverse Bias Voltage
Volts - (V)
pF
2
4
6
8
10
12
0.1 1.0 10
COB
CIB
f = 1.0MHz
Maximum Power Dissipation vs
Ambient Temperature
PD(MAX) - (mW)
TA - (°C)
TO-92
SOT-23
0
200
400
600
800
050 100 150 200
VCE = 5.0V
Collector Current vs
Collector-Emitter Voltage
IC - (mA)
VCE - (V)
IB = 2mA
IB = 1mA
50
100
150
200
250
0.5 1.0 1.5 2.0
Collector Current vs
Collector-Emitter Voltage
IC - (mA)
VCE- (V)
35µA
30µA
0
2
4
6
8
10 20 30 40 50
25µA
20µA
15µA
10µA
5µA
IB = 3mA
IB = 4mA
Contours of Constant Gain
Bandwidth Product (fT)
VCE - (V)
IC - (mA)
0
4
8
12
16
20
24
0.1 1.0 10 100
*50MHz increments from 150
to 250MHz and 260MHz
MMBT2222A
Santa Ana: (714) 979-8220 Scottsdale: (602) 941-6300 Colorado: (303) 469-2161 Watertown: (617) 926-0404 Chatsworth: (818) 701-4933
Sertech Labs: (617) 924-9280 Ireland: (353) 65-40044 Bombay: (91) 22-832-002 Hong Kong: (852) 2692-1202
Collector Saturation Voltage vs
Collector Current
VCE(SAT) - (V)
IC - (mA)
.01
.06
.1
.6
1.0
1.4
0.1 1.0 10 100
TA = 125°C
TA = 25°C
IC/IB = 10
IC - (mA)
Collector Saturation Voltage vs
Collector Current
VCE(SAT) - (V)
TA = 25°C
0.1 1.0 10 100
.01
.06
.1
.6
1
4
Base Saturation Voltage vs
Collector Current
VBE(SAT) - (V)
0.1
0.6
1
6
10
14
1.0 10 100 1000
IC - (mA)
IC/IB = 10
Switching Times vs
Collector Current
T - (ns)
IC - (mA)
1.0
10
100
1000
1.0 10 100
IB1 = IB2 = IC/10
ts
t
f
t
r
td
Base Saturation Voltage vs
Collector Current
VBE(SAT) - (V)
.01
.06
.1
.6
1.0
1.4
1.0 10 100 1000
IC - (mA)
hfe=10
hfe=20
TA=25°C
TA=125°C
hfe=20
hfe=10