2N7002KTB 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-523 FEATURES Unitinch(mm) * Advanced Trench Process Technology 0.044(1.10) 0.035(0.90) 0.067(1.70) 0.059(1.50) 0.013(0.33) 0.009(0.23) * RDS(ON), VGS@10V,IDS@500mA=3 * RDS(ON), VGS@4.5V,IDS@200mA=4 * High Density Cell Design For Ultra Low On-Resistance * Very Low Leakage Current In Off Condition * Specially Designed for Battery Operated Systems, Solid-State Relays 0.052(1.30) 0.043(1.10) Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. 0.024(0.60) 0.019(0.50) 0.067(1.70) 0.059(1.50) * ESD Protected 2KV HBM * /HDGIUHHLQFRPSO\ZLWK(85R+6(&GLUHFWLYHV *UHHQPROGLQJFRPSRXQGDVSHU,(&6WG +DORJHQ)UHH 0.007(0.17) 0.002(0.07) MECHANICALDATA * Case: SOT-523 Package * Terminals : Solderable per MIL-STD-750,Method 2026 * Marking : 27 0.012(0.30) 0.004(0.10) Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Li mi t Uni ts D ra i n-S o urc e Vo lta g e V DS 60 V G a te -S o ur c e Vo lta g e V GS +2 0 V ID 11 5 mA ID M 800 mA PD 200 150 mW O p e r a ti ng J unc ti o n a nd S to r a g e Te m p e ra tur e Ra ng e T J ,T S TG -5 5 to + 1 5 0 Junction-to Ambient Thermal Resistance(PCB mounted)2 RJA 883 C o nti nuo us D ra i n C urr e nt P uls e d D r a i n C urr e nt 1) O M a xi m um P o we r D i s s i p a ti o n T A =2 5 C T A =7 5 O C O O C C /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 5 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE August 11.2010-REV.01 PAGE . 1 2N7002KTB ELECTRICALCHARACTERISTICS P a ra m e te r S ym b o l Te s t C o nd i ti o n M i n. Typ . M a x. Uni ts D ra i n-S o urc e B re a k d o wn Vo lta g e B V DSS V GS =0 V, ID =1 0 A 60 - - V G a te Thre s ho ld Vo lta g e V GS ( th) V D S =V GS , ID =2 5 0 A 1 - 2 .5 V R D S ( o n) VGS=4.5V, I D=200mA - - 4 .0 R D S ( o n) VGS=10V, I D=500mA - - 3.0 ID S S VDS=60V, VGS=0V - - 1 A Gate Body Leakage I GS S V GS =+2 0 V, V D S =0 V - - +1 0 A Forward Transconductance g fS V D S = 1 5 V, I D = 2 5 0 m A 100 - - mS To ta l Ga te C ha r g e Qg V D S = 1 5 V, I D = 2 0 0 m A VGS=4.5V - - 0 .8 nC Tur n- On D e la y Ti m e ton - - 20 Tur n- Off D e la y Ti m e t o ff - - 40 Inp ut C a p a c i ta nc e C iss - - 35 O utp ut C a p a c i ta nc e C oss - - 10 Re ve r s e Tra ns fe r C a p a c i ta nc e C rss - - 5 S ta ti c D ra i n-S o urc e On-S ta te Re s i s ta nc e D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze r o Ga te Vo lta g e D ra i n C ur re nt Dynamic VDD=30V , RL=150 ID=200mA , VGEN=10V RG=10 V D S = 2 5 V, V GS =0 V f=1 .0 M H Z ns pF S o urc e - D r a i n D i o d e D i o d e F o rwa r d Vo lta g e C o nti nuo us D i o d e F o r wa rd C ur re nt P uls e d D i o d e F o r wa rd C ur re nt V SD IS =2 0 0 m A , V GS =0 V - 0 .8 2 1 .3 V Is - - - 11 5 mA Is M - - - 800 mA VDD Switching Test Circuit VIN VDD Gate Charge Test Circuit RL VGS RL VOUT RG 1mA RG August 11.2010-REV.01 PAGE . 2 2N7002KTB O ID - Drain-to-Source Current (A) 1.2 V GS = 6.0~10V ID - Drain Source Current (A) Typical Characteristics Curves (TA=25 C,unless otherwise noted) 5.0V 5.0V 1 4.0V 0.8 4.0V 0.6 0.4 3.0V 0.2 3.0V 0 0 1 2 3 4 1.2 V DS=10V 1 0.8 0.6 0.4 T J=25 0.2 0 0 5 Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic R DS(ON) - On-Resistance ( W ) R DS(ON) - On-Resistance ( W ) 3 V GS = 4.5V 2 1 V GS=10V 0 4 5 6 4 3 ID =500m A 2 IIDD=200m A =200mA 1 0 0 0.2 0.4 0.6 0.8 1 2 3 4 5 6 7 8 9 10 V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) FIG.3- On Resistance vs Drain Current RDS(ON) - On-Resistance(Normalized) 3 5 4 1.6 2 FIG.2- Transfer Characteristic 5 1.8 1 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) FIG.4- On Resistance vs Gate to Source Voltage VGS =10V ID =500mA 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (o C) FIG.5- On Resistance vs Junction Temperature August 11.2010-REV.01 PAGE . 3 Vgs V GS - Gate-to-Source Voltage (V) 2N7002KTB Qg Qsw Vgs(th) 10 V DS=10V I D=250mA 8 6 4 2 0 0 Qg(th) Qgs Qg Qgd ID =250mA 1.1 1 0.9 0.8 -25 0 25 50 75 100 125 150 o 1 88 86 ID = 250uA 84 82 80 78 76 74 72 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( C) Fig.8 - Threshold Voltage vs Temperature IS - Source Current (A) 0.8 o TJ - Junction Temperature ( C) 10 0.6 Fig.7 - Gate Charge BVDSS - Breakdown Voltage (V) Vth - G-S Threshold Voltage (NORMALIZED) 1.2 0.4 Qg - Gate Charge (nC) Fig.6 - Gate Charge Waveform 0.7 -50 0.2 Fig.9 - Breakdown Voltage vs Junction Temperature V GS=0V 1 0.1 25 T J=125 0.01 0.2 -55 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) Fig.10 - Source-Drain Diode Forward Voltage August 11.2010-REV.01 PAGE . 4 2N7002KTB MOUNTING PAD LAYOUT SOT-523 Unitinch(mm) 0.053 (1.35) 0.017 (0.45) 0.016 (0.40) 0.019 (0.50) 0.019 (0.50) ORDER INFORMATION * Packing information T/R - 4K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2012 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. August 11.2010-REV.01 PAGE . 5 2N7002KTB For example : RB500V-40_R2_00001 Serial number Version code means HF Part No. Packing size code means 13" Packing type means T/R Part No_packing code_Version 1.7%B5B 1.7%B5B Packing Code XX Version Code XXXXX Packing type 1st Code T/B A N/A 0 HF 0 serial number T/R R 7" 1 RoHS 1 serial number B/P B 13" 2 T/P T 26mm X TRR S 52mm Y TRL L PBCU U FORMING F PBCD D August 11.2010-REV.01 Packing size nd 2 Code HF or RoHS 1st Code code 2nd~5th Code PAGE . 6