Semiconductor Group 1 Nov-28-1996
BAW 56W
Silicon Switching Diode Array
• For high speed switching applications
• Common anode
Type Marking Ordering Code Pin Configuration Package
BAW 56W A1s Q62702-A1031 1 = C1 2=C2 3=A1/A2 SOT-323
Maximum Ratings per Diode
Parameter Symbol Values Unit
Diode reverse voltage
V
R 70 V
Peak reverse voltage
V
RM 70
Forward current
I
F 200 mA
Surge forward current, t = 1 µs
I
FS 4.5 A
Total Power dissipation
T
S = 103 °C
P
tot 250 mW
Junction temperature
T
j 150 °C
Storage temperature
T
stg - 65 ... + 150
Thermal Resistance
Junction ambient 1)
R
thJA 460 K/W
Junction - soldering point
R
thJS 190
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 2 Nov-28-1996
BAW 56W
Electrical Characteristics at
T
A=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC characteristics per Diode
Breakdown voltage
I
(BR) = 100 µA
V
(BR) 70 - - V
Forward voltage
I
F = 1 mA
I
F = 10 mA
I
F = 50 mA
I
F = 150 mA
V
F
-
-
-
-
-
-
-
-
1250
1000
855
715
Reverse current
V
R = 70 V,
T
A = 25 °C
V
R = 25 V,
T
A = 150 °C
V
R = 70 V,
T
A = 150 °C
I
R
-
-
-
-
-
-
50
30
2.5 µA
AC characteristics per Diode
Diode capacitance
V
R = 0 V,
f
= 1 MHz
C
D- - 2 pF
Reverse recovery time
I
F = 10 mA,
I
R = 10 mA,
R
L = 100
t
rr measured at 1 mA
t
rr
- - 6
ns
Semiconductor Group 3 Nov-28-1996
BAW 56W
Forward current
I
F =
f
(
T
A*;
T
S)
* Package mounted on epoxy
020 40 60 80 100 120 s 160
t
p
0
50
100
150
200
mA
300
I
F
T
S
T
A
Forward current
I
F =
f
(
V
F)
T
A = 25°C
Permissible Pulse Load
R
thJS =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
I
Fmax/
I
FDC =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
-
I
Fmax/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 4 Nov-28-1996
BAW 56W
Forward voltage
V
F =
f
(
T
A)Reverse current
I
R =
f
(
T
A)