MMSS8550
Features
• SOT-23 Plastic-Encapsulate Transistors
• Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.
• Collector-current 1.5A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55OC to +150OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CBO Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0) 40 --- Vdc
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0) 25 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0) 6.0 --- Vdc
ICBO Collector Cutoff Current
(VCB=40Vdc, IE=0) --- 0.1 uAdc
ICEO Collector Cutoff Current
(VCE=20Vdc, IB=0) --- 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, IC=0) --- 0.1 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(IC=100mAdc, VCE=1.0Vdc) 120 350 ---
hFE(2) DC Current Gain
(IC=800mAdc, VCE=1.0Vdc) 40 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=800mAdc, IB=80mAdc) --- 0.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=800mAdc, IB=80mAdc) --- 1.2 Vdc
VEB Base- Emitter Voltage
(IE=1.5Adc) --- 1.6 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Transistor Frequency
(IC=50mAdc, VCE=10Vdc, f=30MHz) 100 --- MHz
CLASSIFICATION OF HFE (1)
Rank L H
Range 120-200 200-350
• Marking Code: Y2
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.110 .120 2.80 3.04
B.083 .098 2.10 2.64
C.047 .055 1.20 1.40
D.035 .041 .89 1.03
E.070 .081 1.78 2.05
F.018 .024 .45 .60
G.0005 .0039 .013 .100
H.035 .044 .89 1.12
J.003 .007 .085 .180
K.015 .020 .37 .51
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
PNP Silicon
Plastic-Encapsulate
Transistor
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: 2 2003/04/30
