MCC MMSS8550 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features * * * * * * PNP Silicon Plastic-Encapsulate Transistor SOT-23 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25 OC) of Power Dissipation. Collector-current 1.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: Y2 SOT-23 Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units 40 --- Vdc 25 --- Vdc 6.0 --- Vdc --- 0.1 uAdc --- 0.1 uAdc --- 0.1 uAdc A D OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB =0) Emitter-Base Breakdown Voltage (IE =100uAdc, IC=0) Collector Cutoff Current (VCB=40Vdc, IE =0) Collector Cutoff Current (VCE=20Vdc, IB =0) Emitter Cutoff Current (VEB =5.0Vdc, IC=0) C F hFE(2) VCE(sat) VBE(sat) VEB DC Current Gain (IC=100mAdc, V CE=1.0Vdc) DC Current Gain (IC=800mAdc, VCE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=800mAdc, IB =80mAdc) Base-Emitter Saturation Voltage (IC=800mAdc, IB =80mAdc) Base- Emitter Voltage (IE =1.5Adc) E H G 120 350 --- 40 --- --- --- 0.5 Vdc --- 1.2 Vdc --- 1.6 Vdc DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 Transistor Frequency (IC=50mAdc, VCE=10Vdc, f=30MHz) MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout SMALL-SIGNAL CHARACTERISTICS fT J DIMENSIONS ON CHARACTERISTICS hFE(1) B 100 --- MHz .031 .800 .035 .900 .079 2.000 CLASSIFICATION OF HFE (1) Rank Range L 120-200 inches mm H 200-350 .037 .950 .037 .950 www.mccsemi.com Revision: 2 2003/04/30