NVTFS5C670NL MOSFET - Power, Single N-Channel 60 V, 6.8 mW, 70 A Features * * * * * * www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5C670NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX 6.8 mW @ 10 V 60 V 10 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGS 20 V ID 70 A Continuous Drain Current RqJC (Notes 1, 2, 3, 4) TC = 25C Power Dissipation RqJC (Notes 1, 2, 3) Continuous Drain Current RqJA (Notes 1 & 3, 4) Steady State TC = 100C TC = 25C Pulsed Drain Current PD Steady State ID Operating Junction and Storage Temperature Source Current (Body Diode) G (4) S (1, 2, 3) MARKING DIAGRAM A 16 11 1 PD 3.2 IDM 440 A TJ, Tstg -55 to +175 C TA = 100C TA = 25C, tp = 10 ms D (5 - 8) 31 TA = 100C TA = 25C 70 A N-Channel W 63 TC = 100C TA = 25C Power Dissipation RqJA (Notes 1, 3) 49 ID MAX W 1.6 IS 68 A Single Pulse Drain-to-Source Avalanche Energy (IL(pk) = 3.6 A) EAS 166 mJ Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL WDFN8 (m8FL) CASE 511AB XXXX A Y WW G 1 S S S G XXXX AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) 260 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit Junction-to-Case - Steady State (Note 3) RqJC 2.4 C/W Junction-to-Ambient - Steady State (Note 3) RqJA 47 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi (Y) is used as required per JESD51-12 for packages in which substantially less than 100% of the heat flows to single case surface. 3. Surface-mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. (c) Semiconductor Components Industries, LLC, 2017 August, 2019 - Rev. 2 1 Publication Order Number: NVTFS5C670NL/D NVTFS5C670NL ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current V 27 VGS = 0 V, VDS = 60 V mV/C TJ = 25C 10 TJ = 125C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 50 mA 100 mA nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance Forward Transconductance RDS(on) 1.2 2.0 -4.7 VGS = 10 V ID = 35 A 5.6 6.8 VGS = 4.5 V ID = 35 A 8.0 10 gFS VDS = 15 V, ID = 35 A V mV/C 82 mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 1400 VGS = 0 V, f = 1 MHz, VDS = 25 V 690 pF 15 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 48 V; ID = 35 A 9.0 nC Total Gate Charge QG(TOT) VGS = 10 V, VDS = 48 V; ID = 35 A 20 nC Threshold Gate Charge QG(TH) 2.5 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Plateau Voltage VGP 3.1 td(ON) 11 VGS = 10 V, VDS = 48 V; ID = 35 A 4.5 nC 2.0 V SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 48 V, ID = 35 A, RG = 2.5 W tf 60 ns 15 4 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 35 A TJ = 25C 0.9 TJ = 125C 0.8 tRR ta tb 1.2 V 34 VGS = 0 V, dIS/dt = 100 A/ms, IS = 35 A QRR 17 ns 17 19 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVTFS5C670NL TYPICAL CHARACTERISTICS 3.8 V 100 80 3.4 V 60 40 3.0 V 20 RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 60 TJ = 25C 40 TJ = 125C 0 0.5 1.0 1.5 2.0 TJ = -55C 2.5 3.0 3.5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics TJ = 25C ID = 35 A 13 11 9 7 3.5 80 0 15 5 100 20 2.6 V 0 VDS = 5 V 120 RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 120 140 4.5 V 6.5 V to 10 V ID, DRAIN CURRENT (A) 140 4.5 5.5 6.5 7.5 8.5 9.5 VGS, GATE VOLTAGE (V) 4.0 10 TJ = 25C 9 8 VGS = 4.5 V 7 6 VGS = 10 V 5 4 5 15 25 35 45 55 65 75 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 100000 1.8 VGS = 10 V ID = 35 A TJ = 175C IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN-TO- SOURCE RESISTANCE 2.0 1.6 1.4 1.2 1.0 10000 TJ = 125C 1000 TJ = 85C 100 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 10 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 3 60 NVTFS5C670NL TYPICAL CHARACTERISTICS VGS, GATE-TO-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 10000 CISS 1000 COSS 100 CRSS 10 1 VGS = 0 V TJ = 25C f = 1 MHz 0 10 20 30 40 50 60 10 QT 9 8 7 6 5 4 QGD QGS 3 VDS = 48 V TJ = 25C ID = 35 A 2 1 0 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-TO-SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 20 t, TIME (ns) 100 IS, SOURCE CURRENT (A) 1000 tr td(on) td(off) 10 VGS = 4.5 V VDS = 48 V ID = 35 A tf 1 ID, DRAIN CURRENT (A) 1000 100 10 TJ = -55C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 TC = 25C VGS 10 V Single Pulse 10 10 ms 0.1 0.1 TJ = 25C RG, GATE RESISTANCE (W) 500 ms 1 10 1 100 IPEAK, DRAIN CURRENT (A) 1 TJ = 125C RDS(on) Limit Thermal Limit Package Limit 1 1 ms 10 TJ(initial) = 25C TJ(initial) = 100C 1 0.1 10 100 1E-5 1E-4 1E-3 1E-2 VDS (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NVTFS5C670NL 100 50% Duty Cycle R(t) (C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Marking Package Shipping NVTFS5C670NLTAG 670L WDFN8 (Pb-Free) 1500 / Tape & Reel NVTFS5C670NLWFTAG 70LW WDFN8 (Pb-Free, Wettable Flanks) 1500 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5