POWER DISCRETES
1www.semtech.com
1N5550US THRU 1N5554US
Surface Mount Hermetically Sealed
Standard Recovery Rectifier Diode
Features
Revision: August 22nd, 2011
Quick reference data
VR = 200 - 1000V
IF = 5.0A
trr = 2µS
VF = 1.0V
uLow reverse leakage current
uHermetically sealed in fused metal oxide
u Good thermal shock resistance
uLow forward voltage drop
uAvalanche capability
Absolute Maximum Ratings
Electrical specifications @ TA = 25°C unless otherwise specified.
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Description
These products are qualified to MIL-PRF-19500/420.
They can be supplied fully released as JAN, JANTX,
and JANTXV versions.
22011 Semtech Corp. www.semtech.com
POWER DISCRETES
1N5550US THRU 1N5554US
Electrical Specifications
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Thermal Characteristics
Typical Characteristics
Fig 1. Typical junction cap acitance as a function of reverse volt age.
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2011 Semtech Corp. www.semtech.com
POWER DISCRETES
1N5550US THRU 1N5554US
Typical Characteristics
Fig 2. Forward voltage drop as a function of forward current Fig 3. Maximum power versus lead temperature
Fig 4. Forward power dissipation as a function of forward
current, for sinusoidal operation. Fig 5. Maximum ratings for capacitive loads.
42011 Semtech Corp. www.semtech.com
POWER DISCRETES
1N5550US THRU 1N5554US
Semtech Corporation
Power Discretes Products Division
200 Flynn Road, Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
Contact Information
Outline Drawing
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Note:
(1) Available in bulk and tape and reel packaging. Please
consult factory for quantities.
Ordering Information
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MID
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NIM XAM NIM XAM
A 2.0 572.0 80.5 99.6 -
B 910.0 430.0 84.0 68.0 -
C 300.0 80.0 -
D 731.0 681.0 84.3 27.4 -
A
B
C
D
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