2SA733
PNP Silicon
Plastic-Encapsulate
Transistor
Features
• Capable of 0.25Watts of Power Dissipation.
• Collector-current 0.1A
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55OC to +150OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(I C=1.0mAdc, IB=0) 50 --- --- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(I C=5.0uAdc, IE=0) 60 --- --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(I E=50uAdc, IC=0) 5.0 --- --- Vdc
ICBO Collector Cutoff Current
(V CB=60Vdc, IE=0) --- --- 0.1 uAdc
IEBO Emitter Cutoff Current
(V EB=5.0Vdc, IC=0) --- --- 0.1 uAdc
ON CHARACTERISTICS
hFE DC Current Gain
(IC=1.0mAdc, VCE=6.0Vdc) 90 200 600 ---
VCE(sat) Collector-Emitter Saturation Voltage
(I C=100mAdc, IB=10mAdc) --- 0.18 0.3 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Transistor Frequency
(I C=10mAdc, VCE=6.0Vdc
f=30MHz) 100 180 --- MHz
CLASSIFICATION OF HFE (1)
Rank S Q P K
Range 90-180 136-270 200-400 300-600
Pin Configuration
Bottom View E C B TO-92
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.46 4.70
C .500 --- 12.7 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
G .095 .105 2.42 2.67
A
E
B
C
D
G
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Revision: 2 2003/06/30
omponents
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