MCC Features * * * * 2SA733 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Capable of 0.25Watts of Power Dissipation. Collector-current 0.1A Collector-base Voltage 60V Operating and storage junction temperature range: -55OC to +150 OC Pin Configuration Bottom View E C PNP Silicon Plastic-Encapsulate Transistor TO-92 B A E Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Typ Max Units 50 --- --- Vdc 60 --- --- Vdc 5.0 --- --- Vdc --- --- 0.1 uAdc --- --- 0.1 uAdc B OFF CHARACTERISTICS V (BR)CEO V (BR)CBO V (BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage (I C=1.0mAdc, IB =0) Collector-Base Breakdown Voltage (I C=5.0uAdc, IE =0) Emitter-Base Breakdown Voltage (I E =50uAdc, IC=0) Collector Cutoff Current (V CB=60Vdc, IE =0) Emitter Cutoff Current (V EB =5.0Vdc, IC=0) C ON CHARACTERISTICS h FE DC Current Gain (IC=1.0mAdc, V CE=6.0Vdc) Collector-Emitter Saturation Voltage (I C=100mAdc, IB =10mAdc) V CE(sat) 90 200 600 --- --- 0.18 0.3 100 180 --- D Vdc SMALL-SIGNAL CHARACTERISTICS fT Transistor Frequency (I C=10mAdc, V CE=6.0Vdc f=30MHz) MHz G DIMENSIONS INCHES CLASSIFICATION OF HFE (1) Rank Range S 90-180 Q 136-270 P 200-400 K 300-600 DIM A B C D E G MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com Revision: 2 2003/06/30