©2001 Fairchild Semiconductor Corporation FRF150D, FRF150R, FRF150H Rev. A
FRF150D, FRF150R,
FRF150H
25A, 100V, 0.07 Ohm, Rad Hard,
N-Channel Power MOSFETs
Package
TO-254AA
Symbol
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
Features
• 25A, 100V, RDS(on) = 0.07
Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 7.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Description
The Intersil Corporation has designed a series of SECOND GENERATION hard-
ened power MOSFETs of both N and P channel enhancement types with ratings
from 100V to 500V, 1A to 60A, and on resistance as low as 25m
Ω
. Total dose hard-
ness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness rang-
ing from 1E13n/cm
2
for 500V product to 1E14n/cm
2
for 100V product. Dose rate
hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12
with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
o
)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
Absolute Maximum Ratings
(TC = +25
o
C) Unless Otherwise Specified
FRF150D, R, H UNITS
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 100 V
Drain-Gate Voltage (RGS = 20k
Ω
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 100 V
Continuous Drain Current
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
25
20
A
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 75 A
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±
20 V
Maximum Power Dissipation
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125
50
1.00
W
W
W/
o
C
Inductive Current, Clamped, L = 100
µ
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . . ILM 75 A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS 25 A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 75 A
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG -55 to +150
o
C
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
o
C
June 1998
©2001 Fairchild Semiconductor Corporation FRF150D, FRF150R, FRF150H Rev. A
Pre-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS
LIMITS
UNITSMIN MAX
Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA 100 - V
Gate-Threshold Volts VGS(th) VDS = VGS, ID = 1mA 2.0 4.0 V
Gate-Body Leakage Forward IGSSF VGS = +20V - 100 nA
Gate-Body Leakage Reverse IGSSR VGS = -20V - 100 nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = 100V, VGS = 0
VDS = 80V, VGS = 0
VDS = 80V, VGS = 0, TC = +125
o
C
-
-
-
1
0.025
0.25
mA
Rated Avalanche Current IAR Time = 20
µ
s - 75 A
Drain-Source On-State Volts VDS(on) VGS = 10V, ID = 25A - 1.84 V
Drain-Source On Resistance RDS(on) VGS = 10V, ID = 20A - .07
Ω
Turn-On Delay Time td(on) VDD = 50V, ID = 25A - 134
ns
Rise Time tr Pulse Width = 3
µ
s - 628
Turn-Off Delay Time td(off) Period = 300
µ
s, Rg = 25
Ω
- 642
Fall Time tf 0
≤
VGS
≤
10 (See Test Circuit) - 490
Gate-Charge Threshold QG(th)
VDD = 50V, ID = 25A
IGS1 = IGS2
0
≤
VGS
≤
20
417
ncGate-Charge On State QG(on) 79 314
Gate-Charge Total QGM 138 552
Plateau Voltage VGP 2 12 V
Gate-Charge Source QGS 11 46
nc
Gate-Charge Drain QGD 40 164
Diode Forward Voltage VSD ID = 25A, VGD = 0 0.6 1.8 V
Reverse Recovery Time TT I = 25A; di/dt = 100A/
µ
s - 1400 ns
Junction-To-Case R
θ
jc - 1.0
o
C/W
Junction-To-Ambient R
θ
ja Free Air Operation - 48
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
VDS
DUT
RGS
0V
VGS = 12V
VDD
RL
tP
VGS ≤ 20V
L
+
-
VDS
VDD
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
50Ω
50Ω
50V-150V
IAS
+
-
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
CURRENT
TRANSFORMER
FRF150D, FRF150R, FRF150H
©2001 Fairchild Semiconductor Corporation FRF150D, FRF150R, FRF150H Rev. A
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TYPE TEST CONDITIONS
LIMITS
UNITSMIN MAX
Drain-Source
Breakdown Volts
(Note 4, 6) BVDSS FRF150D, R VGS = 0, ID = 1mA 100 - V
(Note 5, 6) BVDSS FRF150H VGS = 0, ID = 1mA 95 - V
Gate-Source
Threshold Volts
(Note 4, 6) VGS(th) FRF150D, R VGS = VDS, ID = 1mA 2.0 4.0 V
(Note 3, 5, 6) VGS(th) FRF150H VGS = VDS, ID = 1mA 1.5 4.5 V
Gate-Body
Leakage Forward
(Note 4, 6) IGSSF FRF150D, R VGS = 20V, VDS = 0 - 100 nA
(Note 5, 6) IGSSF FRF150H VGS = 20V, VDS = 0 - 200 nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6) IGSSR FRF150D, R VGS = -20V, VDS = 0 - 100 nA
(Note 2, 5, 6) IGSSR FRF150H VGS = -20V, VDS = 0 - 200 nA
Zero-Gate Voltage
Drain Current
(Note 4, 6) IDSS FRF150D, R VGS = 0, VDS = 80V - 25
µ
A
(Note 5, 6) IDSS FRF150H VGS = 0, VDS = 80V - 100
µ
A
Drain-Source
On-State Volts
(Note 1, 4, 6) VDS(on) FRF150D, R VGS = 10V, ID = 25A - 1.84 V
(Note 1, 5, 6) VDS(on) FRF150H VGS = 16V, ID = 25A - 2.76 V
Drain-Source
On Resistance
(Note 1, 4, 6) RDS(on) FRF150D, R VGS = 10V, ID = 20A - 0.07
Ω
(Note 1, 5, 6) RDS(on) FRF150H VGS = 14V, ID = 20A - 0.105
Ω
NOTES:
1. Pulse test, 300
µ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13
5. Gamma = 1000KRAD(Si). Neutron = 3E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 11/16/89 on TA 17651 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
FRF150D, FRF150R, FRF150H
©2001 Fairchild Semiconductor Corporation FRF150D, FRF150R, FRF150H Rev. A
Typical Performance Characteristics
FRF150D, FRF150R, FRF150H
©2001 Fairchild Semiconductor Corporation FRF150D, FRF150R, FRF150H Rev. A
Typical Performance Characteristics
FRF150D, FRF150R, FRF150H
©2001 Fairchild Semiconductor Corporation FRF150D, FRF150R, FRF150H Rev. A
FRF150D, FRF150R, FRF150H
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
1. Rad Hard TXV Equivalent - Standard Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
D. Group A - Attributes Data Sheet
E. Group B - Attributes Data Sheet
F. Group C - Attributes Data Sheet
G. Group D - Attributes Data Sheet
2. Rad Hard TXV Equivalent - Optional Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
D. Group A - Attributes Data Sheet
- Group A Lot Traveler
E. Group B - Attributes Data Sheet
- Group B Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C - Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
G. Group D - Attributes Data Sheet
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
Class S - Equivalents
1. Rad Hard “S” Equivalent - Standard Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning Attributes Data Sheet
Hi-Rel Lot Traveler
HTRB - Hi Temp Gate Stress Post Reverse
Bias Data and Delta Data
HTRB - Hi Temp Drain Stress Post Reverse
Bias Delta Data
F. Group A - Attributes Data Sheet
G. Group B - Attributes Data Sheet
H. Group C - Attributes Data Sheet
I. Group D - Attributes Data Sheet
2. Rad Hard Max. “S” Equivalent - Optional Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A - Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B - Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C - Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
I. Group D - Attributes Data Sheet
- Hi-Rel Lot Traveler
- Pre and Post Radiation Data
©2001 Fairchild Semiconductor Corporation FRF150D, FRF150R, FRF150H Rev. A
FRF150D, FRF150R, FRF150H
TO-254AA
3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE
D
L
Q
H1
e
e1
J1
A1
A
EØP
Øb
0.065 R MAX.
TYP.
123
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A 0.249 0.260 6.33 6.60 -
A
1
0.040 0.050 1.02 1.27 -
Øb 0.035 0.045 0.89 1.14 2, 3
D 0.790 0.800 20.07 20.32 -
E 0.535 0.545 13.59 13.84 -
e 0.150 TYP 3.81 TYP 4
e
1
0.300 BSC 7.62 BSC 4
H
1
0.245 0.265 6.23 6.73 -
J
1
0.140 0.160 3.56 4.06 4
L 0.520 0.560 13.21 14.22 -
ØP 0.139 0.149 3.54 3.78 -
Q 0.110 0.130 2.80 3.30 -
NOTES:
1. These dimensions are within allowable dimensions of Rev. A of
JEDEC outline TO-254AA dated 11-86.
2. Add typically 0.002 inches (0.05mm) for solder coating.
3. Lead dimension (without solder).
4. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
5. Die to base BeO isolated, terminals to case ceramic isolated.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
WARNING!
BERYLLIA WARNING PER MIL-S-19500
Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical
operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound
shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’
compounds.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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Star* Power™
Stealth™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
Rev. H
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
F ACT Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET™
VCX™