June 2009 Doc ID 15709 Rev 1 1/12
12
STW45NM60D
N-channel 600 V, 0.09 Ω, 45 A TO-247
FDmesh™ Power MOSFET (with fast diode)
Features
■High dv/dt and avalanche capabilities
■100% avalanche tested
■Low input capacitance and gate charge
■Low gate input resistance
Application
■Switching applications
Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
Figure 1. Internal schematic diagram
Type VDSS
(@Tjmax) RDS(on) ID
STW45NM60D 650 V < 0.11 Ω45 A
TO-247
123
!-V
$
'
3
Table 1. Device summary
Order code Marking Package Packaging
STW45NM60D W45NM60D TO-247 Tube
www.st.com
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Contents STW45NM60D
2/12 Doc ID 15709 Rev 1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STW45NM60D Electrical ratings
Doc ID 15709 Rev 1 3/12
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 600 V
VGS Gate- source voltage ±30 V
IDDrain current (continuous) at TC = 25 °C 45 A
IDDrain current (continuous) at TC = 100 °C 28 A
IDM (1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 180 A
PTOT Total dissipation at TC = 25 °C 417 W
Derating factor 3.33 W/°C
dv/dt (2)
2. ISD ≤ 45 A, di/dt ≤ 400 A/µs, VDD ≤ 80% V(BR)DSS
Peak diode recovery voltage slope 20 V/ns
Tstg Storage temperature -65 to 150 °C
TjMax. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case 0.3 °C/W
Rthj-amb Thermal resistance junction-amb 30 °C/W
TlMaximum lead temperature for soldering purpose 300 °C
Table 4. Avalanche characteristics
Symbol Parameter Max value Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max) 15 A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAS, VDD = 35 V) 850 mJ
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Electrical characteristics STW45NM60D
4/12 Doc ID 15709 Rev 1
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage ID = 250 µA, VGS = 0 600 V
IDSS
Zero gate voltage
Drain current (VGS = 0)
VDS = Max rating 10 µA
VDS = Max rating, TC = 125 °C 100 µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ±30 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
RDS(on)
Static drain-source on
resistance VGS = 10 V, ID = 22.5 A 0.09 0.11 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward transconductance VDS > ID(on) x RDS(on)max,
ID= 22.5 A -30 - S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz, VGS = 0 -
3500
1400
76
-
pF
pF
pF
Coss eq.(2)
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance VGS = 0, VDS = 0 to 480 V - 520 - pF
RGGate input resistance
f=1 MHz Gate DC Bias = 0
test signal level = 20 mV
open drain
-2 - Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 45 A,
VGS = 10 V
Figure 15
-
96
20
60
-
nC
nC
nC
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STW45NM60D Electrical characteristics
Doc ID 15709 Rev 1 5/12
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
Turn-on delay time
Rise time VDD = 300 V, ID = 22.5 A
RG=4.7 Ω VGS = 10 V
Figure 14
-25
70 -ns
ns
td(off)
tf
Turn-off delay time
Fall time -60
66 -ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 45 A
ISDM (1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) - 180 A
VSD (2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward on voltage ISD = 45 A, VGS = 0 - 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 45 A,
di/dt = 100 A/µs,
VDD = 100 V
Figure 16
-
200
2
17
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 45 A,
di/dt = 100 A/µs,
VDD = 100 V, Tj = 150 °C
Figure 16
-
300
4
23
ns
µC
A
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Electrical characteristics STW45NM60D
6/12 Doc ID 15709 Rev 1
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static-drain source on resistance
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STW45NM60D Electrical characteristics
Doc ID 15709 Rev 1 7/12
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized BVDSS vs temperature
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Test circuit STW45NM60D
8/12 Doc ID 15709 Rev 1
3 Test circuit
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped inductive load test
circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
µF
3.3
µFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
µF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100µH
µF
3.31000
µFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
µF
3.3
µFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
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STW45NM60D Package mechanical data
Doc ID 15709 Rev 1 9/12
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
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Package mechanical data STW45NM60D
10/12 Doc ID 15709 Rev 1
Dim. mm.
Min. Typ Max.
51.558.4A
06.202.21A
04.10.1b
04.20.21b
04.30.32b
08.004.0c
51.0258.91D
57.5154.51E
54.5e
08.4102.41L
03.407
.31L
05.812L
56.355.3Pø
05.505.4Rø
05.5S
TO-247 Mechanical data
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STW45NM60D Revision history
Doc ID 15709 Rev 1 11/12
5 Revision history
Table 9. Document revision history
Date Revision Changes
08-Jun-2009 1 First release
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STW45NM60D
12/12 Doc ID 15709 Rev 1
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