BACKSIDE CATHODE
CPD76X-1N5817
Schottky Rectifier Die
1.0 Amp, 20 Volt
Die Size 32 x 32 MILS
Die Thickness 5.9 MILS
Anode Bonding Pad Size 27 x 27 MILS
Top Side Metalization Al – 20,000Å
Back Side Metalization Au – 9,000Å
Scribe Alley Width 2.36 MILS
Wafer Diameter 5 INCHES
Gross Die Per Wafer 16,276
The CPD76X-1N5817 is a silicon 1.0 Amp, 20 Volt Schottky rectifi er ideal for all types of
commercial, industrial, entertainment, and computer applications.
MECHANICAL SPECIFICATIONS:
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 20 V
DC Blocking Voltage VR 20 V
RMS Reverse Voltage VR(RMS) 14 V
Average Forward Current (TA=100°C) IO 1.0 A
Peak Forward Surge Current, tp=8.3ms IFSM 25 A
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR V
R=20V 1.0 mA
VF I
F=0.1A 320 mV
VF I
F=1.0A 450 mV
VF I
F=3.1A 750 mV
CJ V
R=0, f=1.0MHz 300 pF
R1
ANODE
R1 (14-September 2016)
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CPD76X-1N5817
Typical Electrical Characteristics
R1 (14-September 2016)
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(001)
REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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