fiAMOSPEC HIGH POWER PNP SILICON POWER TRANSISTORS ...designed for use in general-purpose amplifier and switching application . FEATURES: * Recommend for 60 W High Fiderity Audio Frequency Amplifier Output stage * Complementary to 2SC2837 MAXIMUM RATINGS PNP 2SA1186 10 AMPERE POWER TRANASISTOR 150 VOLTS 100 WATTS TO-247(3P) ere $ Characteristic Symbol 2SA1186 Unit Collector-Emitter Voltage Vero 150 Vv Collector-Base Voltage Vego 150 Vv Emitter-Base Voltage Vero 5.0 V Collector Current - Continuous le 10 A - Peak lom 15 Base current lp 2.0 A Total Power Dissipation @T, = 25C Py 100 Ww Derate above 25C 0.8 wrc Operating and Storage Junction Ty .Tst c Temperature Range ~55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case R8jc 1.25 CAW oo J r fe H Tq l L. we A PIN 1.BASE FIGURE -1 POWER DERATING 100 8 8 8 Pp , POWER DISSIPATION(WATTS) oO 0 2 50 75 100 125 150 To , TEMPERATURE(C) 2.COLLECTOR 3.EMITTER DIM MILLIMETERS MIN MAX A 20.63 | 22.38 B 15.38 | 16.20 c 1.90 2.70 D 5.10 6.10 E 1481 | 15.22 F 11.72 | 12.84 G 4.20 450 H 1.82 2.46 | 2.92 3.23 J 0.89 153 K 5.26 5.66 L 1850 | 21.50 M 4.68 5.36 N 2.40 2.80 0 3.2 3.6 P 055 0.702SA1186 PNP ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Vier)cEo Vv (I,= 25 mA, I,=0 ) 150 Collector Cutoff Current lepo uA ( Veg 150 V, I= 0 ) 100 Emitter Cutoff Current leno uA ( Vep= 5.0 V, I,= 0) 100 ON CHARACTERISTICS (1) DC Current Gain (Ig= 3.0 A, Vop= 4.0 V ) hFE 30 Collector-Emitter Saturation Voitage Vce{sat) V (1,= 5.0 A, I,= 500 mA ) 2.0 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product f, MHz (lg = 1.0 A, Veg = 12 V, f = 1.0 MHz) 10 SWITCHING CHARATERISTICS Turn-on Time Voec= 60 V, I= 5.0A ton 0.40(typ) us Ina= -lpo= 0.5 A Storage Ti B1 ~'B2 t 1.60 us ge Time Ri=12 ohm s (typ) Fall Time ty 0.50(typ) us (1) Pulse Test: Pulse Width =300 us,Duty Cycle = 2.0%2SA1186 PNP EA ACTIVE REGION SAFE OPERATING AREA (SOA) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate = Ic-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Typig=150 C; Te is variable depending on conditions.. second breakdown pulse limits are valid for duty cycles to 10% provided SINGLE NONREPETITIVE TypigS150C,At high case temperatures, thermal limita - PULSE To=25C tion will reduce the power that can be handled to vaiues CURVES MUST BE tess than the limitations imposed by second breakdown. LINEARLY WITH INCREASE IN TEMPERATURE Ig MAX.(CONTINUOUS) le, COLLECTOR CURRENT (Amp.) o 041 20 3.0 0 7.0 10 20 (30 50 70 100 200 Vee , COLLECTOR EMITTER (VOLTS) VCE(sat) - Is Ic - Vee a 2 ] = w < < 5 5 oO x > a % 2 E x z 5 % 4 o Qo B 8 4 2 8 3 0 05 1.0 15 2.0 0 06 1 15 2 25 3 3.5 4 lk, BASE CURRENT (A) Vee , COLLECTOR-EMITTER VOLTAGE (V) Ic - Vbe DC CURRENT GAIN 10 COMMON Voez4V 2 = o o > o hre , DC CURRENT GAIN Ic , COLLECTOR CURRENT (A) T8125 C N 04 o8 12 6 20 002005 O12 05 10 20 50 10 Vee, BASE - EMITTER VOLTAGE (V) Ic, COLLECTOR CURRENT (AMP)