ADVANCED LINEAR DEVICES, INC. ALD1108E/ALD1110E QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPADTM) FEATURES BENEFITS * Operates from 2V, 3V, 5V to 10V * Flexible basic circuit building block and design element * Very high resolution -- average programmable voltage * Simple, elegant single-chip solution resolution of 0.1mV to trimming voltage/current values * Direct in-circuit active element operation and programming * Wide dynamic range -- current levels from 0.1A to 3000A * Remotely and electrically trim parameters on circuits that are physically inaccessible * Voltage adjustment range from 1.000V to 3.000V in 0.1mV steps Proven, non-volatile CMOS technology Typical 10 years drift of less than 2mV Usable in voltage mode or current mode High input impedance -- 1012 Very high DC current gain -- greater than 109 Device operating current has positive temperature coefficient range and negative temperature coefficient range with cross-over zero temperature coefficient current level at 68A * Tight matching and tracking of on-resistance between different devices with programming * Very low input currents and leakage currents * Low cost, monolithic technology * Application-specific or in-system programming modes * User programmable software-controlled automation * User programmability of any standard/custom configuration * Micropower operation * Available in standard PDIP, SOIC and hermetic CDIP packages * Suitable for matched-pair balanced circuit configuration * Suitable for both coarse and fine trimming applications * * * * * * ORDERING INFORMATION * Usable in environmentally sealed circuits * No system overhead or active circuitry required * No mechanical moving parts -- high G-shock tolerance * Improved reliability, dependability, dust and moisture resistance * Cost and labor savings * Small footprint for high board density applications * Fully automated test and trimming environment PIN CONFIGURATION ALD1108E PN1 1 GN1 2 DN1 3 S12 4 16-Pin Plastic Dip Package 16-Pin SOIC Package ALD1108E DC ALD1108E PC ALD1108E SC Operating Temperature Range* -55C to +125C 0C to +70C 0C to +70C 8-Pin CERDIP Package 8-Pin Plastic Dip Package 8-Pin SOIC Package ALD1110E DA ALD1110E PA ALD1110E SA EPAD 2 v+ v- 16 PN2 15 GN2 14 DN2 13 V+ V- 5 12 S34 DN4 6 11 DN3 GN4 7 10 GN3 PN4 8 9 PN3 8 PN2 Operating Temperature Range* -55C to +125C 0C to +70C 0C to +70C 16-Pin CERDIP Package EPAD 1 EPAD 4 EPAD 3 DC, PC, SC PACKAGE PIN CONFIGURATION ALD1110E PN1 1 EPAD 1 EPAD 2 GN1 2 7 GN2 DN1 3 6 DN2 S12, V- 4 5 V+ v+ DA, PA, SA PACKAGE * Contact factory for industrial temperature range (c) 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com APPLICATIONS GENERAL DESCRIPTION * Precision PC-based electronic calibration * Automated voltage trimming or setting * Remote voltage or current adjustment of ALD1108E/ALD1110E are monolithic quad/dual EPADs (Electrically Programmable Analog Device) that utilize CMOS MOSFET with electrically programmable threshold voltage. For a given input voltage, changing the threshold turn-on voltage of a MOSFET device precisely changes its drain on-current, resulting in an on-resistance characteristic that can be precisely set and controlled. Used as an in-circuit element for trimming or setting a combination of voltage and/or current characteristics, it can be programmed via a Personal Computer remotely and automatically via software control. Once programmed and set, the set voltage and current levels are stored indefinitely inside the device as a precisely controlled nonvolatile stored charge, which is not affected during normal operation of the device, even after power has been turned off. inaccessible nodes * PCMCIA based instrumentation trimming * Electrically adjusted resistive load * Temperature compensated current sources and current mirrors * Electrically trimmed/calibrated current sources * Permanent precision preset voltage level shifter * Low temperature coefficient voltage and/or current bias circuits * Multiple preset voltage bias circuits * Multiple channel resistor pull-up or pull-down * * * * * * * * circuits Microprocessor based process control systems Portable data acquisition systems Battery operated terminals and instruments Remote telemetry systems Programmable gain amplifiers Low level signal conditioning Sensor and transducer bias currents Neural networks BLOCK DIAGRAM ALD1110E V+(5) PN1 (1) DN2 (6) DN1 (3) PN2 (8) ~ GN2 (7) GN1(2) EPAD 1 The basic device is a monotonically adjustable device which means the device can normally be programmed to increase in threshold voltage and to decrease in drain-on current as a function of a given input bias voltage. Once adjusted, the voltage and current conditions are permanent and not reversible. However, a given EPAD device can be adjusted many times to continually increase the threshold voltage. A pair of EPAD devices can also be connected such that one device is used to adjust a parameter in one direction and the other device is used to adjust the same parameter in the other direction. The ALD1108E/ALD1110E can be pre-programmed with the ALD EPAD programmer to obtain the desired voltage and current levels. Or, they can be programmed as an active in-system element in a user system, via user designed interface circuitry. For more information, see Application Note AN1108. ~ EPAD 2 S12 (4) The ALD1108E/ALD1110E are devices built with ALD's EPAD technology, an electrically programmable device technology refined for analog applications. The ALD1108E/ALD1110E functions like a regular MOSFET transistor except with precise user preset threshold voltage. Using the ALD1108E/ALD1110E is simple and straight forward. The device is extremely versatile as a circuit element and design component. It presents the user with a wealth of possible applications, limited only by the imagination of the user and the many ways an analog MOSFET device can be used as a circuit design element. The ALD1108E/ ALD1110E do not need other active circuitry for functionality. V- (4) BLOCK DIAGRAM ALD1108E V+(13) PN (1) DN1 (3) DN2 (14) PN2 (16) PN3 (9) DN3 (11) DN4 (6) PN4 (8) ~ GN1(2) EPAD 2 EPAD 1 S12 (4) ALD1108E/ALD1110E GN4 (7) GN2 (15) GN3(10) ~ EPAD 3 V- (5) Advanced Linear Devices EPAD 4 S34 (12) 2 ABSOLUTE MAXIMUM RATINGS Supply voltage, V+ referenced to VSupply voltage, VS referenced to VDifferential input voltage range Power dissipation Operating temperature range PA, SA, PC, SC package DA, DC package Storage temperature range Lead temperature, 10 seconds -0.3V to +13.2V 6.6V 0.3V to V+ +0.3V 600 mW 0C to +70C -55C to +125C -65C to +150C +260C OPERATING ELECTRICAL CHARACTERISTICS TA = 25C V+ = +5.0V unless otherwise specified ALD1108E Parameter Symbol Supply Voltage V+ 1.2 Initial Threshold Voltage Vt i 0.990 Programmable Vt Range Vt 1.000 Drain - Gate Connected TCVDS Voltage Tempco Min Typ 1.000 ALD1110E Max Min 10.0 1.2 1.010 0.990 3.000 1.000 Typ 1.000 Test Max Unit 10.0 V 1.010 V 3.000 V Conditions IDS = 1A T A = 21C -1.6 -1.6 mV/C ID = 5A -0.3 0.0 -0.3 0.0 mV/C mV/C ID = 50A ID = 68A +2.7 +2.7 mV/C ID = 500A Initial Offset Voltage VOS i 1 Tempco of VOS TCVOS 5 Differential Threshold Voltage DV t Tempco of Differential Threshold Voltage TCDV t 0.033 Long Term Drift V t /t -0.02 Long Term Drift Match V t /t -5 Drain Source On Current IDS(ON) Drain Source On Current IDS(ON) Initial Zero Tempco Voltage VZTCi Zero Tempco Current 5 1 5 V/C 5 2.000 2.000 0.033 -0.02 VDS1 = VDS2 V mV/C mV 1000 Hours -5 V 1000 Hours 3.0 3.0 mA VG =VD = 5V VS = 0V Vt = 1.0 0.8 0.8 mA VG =VD = 5V V S = 0V Vt = 3.0 1.52 1.52 V V t = 1.000V IZTC 68 68 A Initial On-Resistance RON i 500 500 On-Resistance Match RON 0.5 0.5 % ALD1108E/ALD1110E -0.05 mV Advanced Linear Devices -0.05 VGS = 5V VDS = 0.1V 3 OPERATING ELECTRICAL CHARACTERISTICS (cont'd) TA = 25C V+ = +5.0V unless otherwise specified ALD1108E Transconductance gm 1.4 1.4 mA/V VD = 10V,VG =Vt + 4.0 Transconductance Match gm 25 25 A/V VD = 10V,VG =Vt + 4.0 Low Level Output Conductance gOL 6 6 A/V VG = Vt +0.5V High Level Output Conductance gOH 68 68 A/V VG = Vt +4.0V Drain Off Leakage Current ID(OFF) 400 4 pA nA TA = 125C 100 1 pA nA TA = 125C Input Capacitance 10 CISS Cross Talk tRLX Relaxation Voltage VRLX Max 5 IGSS Relaxation Time Constant Typ Min Typ Test Symbol Gate Leakage Current Min ALD1110E Parameter 400 4 5 100 1 10 Max Unit 25 25 pF 60 60 dB 2 2 -0.3 -0.3 Conditions f = 100KHz Hours % 1.0V Vt 3.0V PROGRAMMING CHARACTERISTICS TA = 25C V+ = +5.0V unless otherwise specified Parameter Symbol Programmable Vt Range Vt Min ALD1108E Typ 1.000 ALD1110E Typ Max Min 3.000 1.000 Max 3.000 Unit Test Conditions V Resolution of V t Programming RV t Change in Vt Per Programming Pulse V t / N Programming Voltage Vp Programming Current Ip Pulse Frequency pulse ALD1108E/ALD1110E 0.1 1 0.1 0.5 0.05 11.75 12.00 1 0.5 0.05 12.25 11.75 12.00 2 2 50 50 Advanced Linear Devices mV mV/ pulse 12.25 Vt = 1.0V Vt = 2.5V V mA KHZ 4 TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS +1.0 TA = +25C DRAIN SOURCE ON CURRENT (mA) DRAIN SOURCE ON CURRENT (mA) 20 VGS = +12V 15 VGS = +10V VGS = + 8V 10 VGS = + 6V 5 VGS = + 4V VGS = + 2V 0 TA = +25C VGS = +10V 0 VGS = +6V VGS = +8V -1.0 0 2 4 6 8 10 12 -200 -160 -120 -80 -40 DRAIN SOURCE ON VOLTAGE (V) 40 80 120 160 +200 DRAIN SOURCE ON CURRENT vs. THRESHOLD VOLTAGE 3.0 DRAIN SOURCE ON CURRENT (mA) 6 DRAIN SOURCE ON CURRENT (mA) 0 DRAIN SOURCE VOLTAGE (mV) DRAIN SOURCE ON CURRENT vs. AMBIENT TEMPERATURE VG = 5V 5 4 Vt = 1.0V 3 Vt = 1.5V Vt = 2.0V 2 Vt = 2.5V 1 Vt = 3.0V -50 -25 0 25 50 75 100 TA = +25C VDS = +5.0V VGS = +5V VGS = +4V 2.0 VGS = +3V 1.0 VGS = +2V VGS = +1V 0 0 0 125 0.5 1.0 1.5 2.0 2.5 3.0 AMBIENT TEMPERATURE (C) THRESHOLD VOLTAGE (V) TRANSCONDUCTANCE vs. THRESHOLD VOLTAGE HIGH LEVEL OUTPUT CONDUCTANCE vs.THRESHOLD VOLTAGE 3.5 75 2.0 HIGH LEVEL OUTPUT CONDUCTANCE (A/V) TA = +25C TRANSCONDUCTANCE ( mA/V) VGS = +12V 1.5 1.0 5.0 VGS = Vt + 4.0V VDS = 10V TA = +25C 70 60 VGS = Vt + 4.0V VDS = 5.0V 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 ALD1108E/ALD1110E 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 THRESHOLD VOLTAGE (V) THRESHOLD VOLTAGE (V) Advanced Linear Devices 5 TYPICAL PERFORMANCE CHARACTERISTICS LOW LEVEL OUTPUT CONDUCTANCE vs. AMBIENT TEMPERATURE THRESHOLD VOLTAGE vs. AMBIENT TEMPERATURE 12 4.0 ID = 1.0A 3.0 Vt = 3.0V 2.0 Vt = 2.0V LOW LEVEL OUTPUT CONDUCTANCE(A/V) THRESHOLD VOTAGE (V) VDS = VGS Vt = 2.5V Vt = 1.5V 1.0 Vt = 1.0V VGS = Vt + 0.5V VDS = 5.0V 10 8 6 4 2 0 -50 -25 0 25 50 75 100 -50 125 -25 AMBIENT TEMPERATURE (C) DRAIN OFF LEAKAGE CURRENT (pA) TRANSCONDUCTANCE vs. AMBIENT TEMPERATURE TRANSCONDUCTANCE (mA/V) 2.5 2.0 1.5 1.0 0.5 0 -50 -25 0 25 50 75 100 400 300 IDS 200 100 0 -50 -25 70 60 50 40 50 75 100 25 50 75 100 125 10 TA = +25C 5 VGS = Vt + 0.5V VDS = 5.0V 0 125 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 THRESHOLD VOTAGE (V) AMBIENT TEMPERATURE (C) ALD1108E/ALD1110E 0 LOW LEVEL OUTPUT CONDUCTANCE vs. THRESHOLD VOLTAGE LOW LEVEL CURRENT OUTPUT CONDUCTANCE (A/V) HIGH LEVEL OUTPUT CONDUCTANCE (mA/V) 80 25 125 100 AMBIENT TEMPERATURE (C) VGS = Vt + 4.0V VDS = 5.0V 0 75 500 125 100 -25 50 600 HIGH LEVEL OUTPUT CONDUCTANCE vs. AMBIENT TEMPERATURE -50 25 DRAIN OFF LEAKAGE CURRENT IDS vs. AMBIENT TEMPERATURE AMBIENT TEMPERATURE (C) 90 0 AMBIENT TEMPERATURE (C) Advanced Linear Devices 6 TYPICAL PERFORMANCE CHARACTERISTICS DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE 100 -55C 4 -25C 3 0C 2 1 70C 0 0 CHANGE IN DIFFERENTIAL THRESHOLDVOLTAGE (mV) DRAIN SOURCE ON CURRENT ( A) 5 1 2 3 125C 4 Zero Temperature Coefficient (ZTC) ZTC 125C 125C 125C 50 { { Vt = 1.0V { Vt = 1.2V - 25C Vt = 1.4V - 25C - 25C 1.0 5 1.4 1.2 1.8 1.6 2.0 GATE AND DRAIN SOURCE VOLTAGE (VGS = VDS) (V) GATE AND DRAIN SOURCE VOLTAGE (VGS = VDS) (V) CHANGE IN DIFFERENTIAL THRESHOLD VOLTAGE vs. AMBIENT TEMPERATURE DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. ON - RESISTANCE 10000 +10 +8 REPRESENTATIVE UNITS +6 +4 +2 0 -2 -4 -6 -8 VDS = RON * IDS(ON) VGS = +0.9V to +5.0V 1000 VDS = 5.0V 100 D VDS 10 IDS(ON) VGS 1.0 S VDS = 0.5V 0.1 -10 -50 -25 0 25 50 75 100 0.1 125 1.0 GATE SOURCE VOLTAGE vs. DRAIN SOURCE ON CURRENT 4 IDS(ON) VGS VDS = 0.5V TA = +125C S 3 VDS = 0.5V TA = +25C 2 VDS = 5V TA = +25C 1 VDS = 5V VDS = RON * IDS(ON) TA = +125C 0 0.1 1 10000 10 100 1000 Vt = 1.000V VDS = VGS 4 TA = -55C 3 TA = 0C 2 TA = +50C 1 TA = +125C 0 10000 DRAIN SOURCE ON CURRENT (A) ALD1108E/ALD1110E 1000 5 VDS D 100 DRAIN SOURCE ON CURRENT vs. OUTPUT VOLTAGE DRAIN SOURCE ON CURRENT (mA) 5 10 ON - RESISTANCE (K) AMBIENT TEMPERATURE (C) GATE SOURCE VOLTAGE (V) ZTC 0 DRAIN SOURCE ON CURRENT, BIAS CURRENT (A) DRAIN SOURCE ON CURRENT (mA) DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE 0 1 2 3 4 5 OUTPUT VOLTAGE (V) Advanced Linear Devices 7 TYPICAL PERFORMANCE CHARACTERISTICS OFFSET VOLTAGE vs. AMBIENT TEMPERATURE GATE LEAKAGE CURRENT vs. AMBIENT TEMPERATURE OFFSET VOLTAGE (mV) 3 GATE LEAKAGE CURRENT (pA) 4 REPRESENTATIVE UNITS 2 1 0 -1 -2 -3 600 500 400 300 200 IGSS 100 0 -4 -50 -25 0 25 50 75 100 -50 125 GATE SOURCE VOLTAGE vs. ON - RESISTANCE +125C VGS DRAIN- GATE DIODE CONNECTED VOLTAGE TEMPCO (mV/ C ) GATE SOURCE VOLTAGE (V) 4.0 VDS IDS(ON) S 0.0V VDS 5.0V 3.0 +25C 2.0 1.0 0.1 1 10 100 25 50 75 100 125 1000 5 -55C TA +125C 2.5 0 -2.5 -5 10000 ON - RESISTANCE (K) ALD1108E/ALD1110E 0 DRAIN - GATE DIODE CONNECTED VOLTAGE TEMPCO vs. DRAIN SOURCE ON CURRENT 5.0 D -25 AMBIENT TEMPERATURE (C) AMBIENT TEMPERATURE (C) 1 10 100 1000 DRAIN SOURCE ON CURRENT (A) Advanced Linear Devices 8 DEFINITION OF TERMS Bias Voltage (V BIAS) Bias Voltage of an EPAD is the voltage across Gate and Source terminals with Gate and Drain connected at a specified Drain to Source Current, IDS. When IDS = 1A, Bias Voltage is identical to Threshold Voltage. Input Bias Voltage of an EPAD is the voltage across Gate and Source terminals, VGS. Output Bias Voltage of an EPAD is the voltage across Drain and Source terminals VDS at a specified Drain to Source Current, I DS . Change in Threshold Voltage Per Programming Pulse (Vt/ N) This is the voltage change in Threshold Voltage while the EPAD is being programmed with an electrical voltage pulse. This voltage change can be very small as it varies as an exponential function of Vt. Typical initial values range from 0.1 mV/step to 1.0mV/step when Vt = 1 Volt and decreases to 10V/step or lower at higher Vt values. Delta Threshold Voltage (Vt) Delta Threshold Voltage is a change in the threshold voltage of the same EPAD device after programming. Differential Threshold Voltage (DVt) Differential Threshold Voltage is the difference of Vt between the two EPAD devices, each electrically programmed to a different Vt value. This is also a fixed relative voltage that tracks with temperature, with tempco value of TC DVt for 1 volt relative Vt between two EPADs. EPADTM Electrically Programmable Analog Device is an Integrated Circuit that utilizes CMOS FET with electrically programmable Threshold Voltage. Once programmed, the set Threshold Voltage is retained indefinitely, even when power is off. Initial Threshold Voltage (Vt i) The initial Vt of a device before being electrically programmed to a new Vt value. Initial Zero Tempco Voltage (VZTCi) Initial Drain Voltage at which the Temperature Coefficient of the Drain-Gate connected Voltage, relative to the Source Voltage, is at zero, when the initial Vt is at 1.000 volt. Long Term Drift (Vt /t) Long Term Drift is the nominal change in threshold voltage of an EPAD for a time period of 1,000 hours. Long Term Drift Match (Vt /t) Long Term Drift Match is the nominal match in long term drift between two EPADs, for a time period of 1,000 hours. Monotonic Adjustment of Vt Vt Adjustment can be changed in one direction only. Offset Voltage (VOS) Offset Voltage is the small difference in Vt between two EPAD devices when the two devices have the same initial electrically programmed Vt values. Programming Voltage (Vp) The voltage at which programming of the threshold voltage of the EPAD occurs. This voltage, the control of timing of this voltage and the impedance of the voltage source is critical to the way the EPAD is programmed and its subsequent device performance. The user is advised to use an ALD EPAD programmer which has been specifically designed and developed for this task. Relaxation Time Constant (tRLX) Relaxation Time Constant is the time constant associated with the Relaxation Voltage drop after an EPAD has been programmed. ALD1108E/ALD1110E Advanced Linear Devices 9 Relaxation Voltage (VRLX ) After programming, an EPAD threshold voltage will " relax " a small amount, which corresponds to a small loss of interface charge. This is a small, fixed voltage step and decreases at a Relaxation Time Constant. The Relaxation Voltage is the voltage change (voltage drop) after three Relaxation Time Constants. To compensate for this, an initial relaxation voltage, expressed as a percentage of the programmed Vt, can be added to the initial desired target voltage. Tempco of Differential Threshold Voltage (TCDVt ) Temperature Coefficient of Differential Threshold Voltage is the change in difference between two EPAD threshold voltages per degree C change in temperature when the two devices initially have 1V relative electrically programmed Vt difference. Tempco of Threshold Voltage (TCVt ) Temperature Coefficient of the Vt is the change in the Threshold Voltage per degree C change in temperature. Threshold Voltage (Vt ) Threshold Voltage of an EPAD is the voltage across Gate and Source when 1A is forced into the Drain terminal as the Drain and Gate are connected together. Tempco of VOS (TCVOS) Temperature Coefficient of Offset Voltage is the change in difference between two EPAD threshold voltages per degree Centigrade change in temperature when the two devices have the same initial electrically programmed Vt values. Zero Tempco Current (I ZTC ) The Drain current of an EPAD device at which Temperature Coefficient of the Drain-Gate Connected Voltage, relative to the Source Voltage, is at zero. ALD1108E/ALD1110E Advanced Linear Devices 10