Semiconductor Group 1
PNP Silicon AF and Switching Transistors BCX 42
BSS 63
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package1)
Pin Configuration
BCX 42
BSS 63 Q62702-C1485
Q62702-S534
DKs
BMs SOT-23
B E C
123
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 100 V
Collector-base voltage VCB0 110
Emitter-base voltage VEB0 5
Collector current IC800 mA
Peak collector current ICM 1A
Base current IB100 mA
Peak base current IBM 200
Total power dissipation, TS=79˚C Ptot 330 mW
Junction temperature Tj150 ˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient 2) Rth JA ≤ 285 K/W
125
125
5
BSS 63 BCX 42
Junction - soldering point Rth JS ≤ 215
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
●For general AF applications
●High breakdown voltage
●Low collector-emitter saturation voltage
●Complementary types: BCX 41, BSS 64 (NPN)
5.91
Semiconductor Group 2
BCX 42
BSS 63
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
UnitValues
Parameter Symbol
min. typ. max.
DC characteristics
VCollector-emitter breakdown voltage
I
C = 10 mA BCX 42
BSS 63
V(BR)CE0 125
100 –
––
–
MHzTransition frequency
I
C = 20 mA, VCE = 5 V, f = 20 MHz fT– 150 –
pFOutput capacitance
VCB = 10 V, f = 1 MHz Cobo –12–
AC characteristics
Collector-base breakdown voltage1)
I
C = 100 µA BCX 42
BSS 63
V(BR)CB0 125
110 –
––
–
µACollector cutoff current
VCE = 100 V
TA = 85 ˚C BCX 42
TA = 125 ˚C BCX 42
ICE0
–
––
–10
75
Emitter-base breakdown voltage, IE = 10 µAV(BR)EB0 5––
nA
nA
µA
µA
Collector cutoff current
VCB = 80 V BSS 63
VCB = 100 V BCX 42
VCB =80V,TA = 150 ˚C BSS 63
VCB = 100 V, TA = 150 ˚C BCX 42
ICB0 –
–
–
–
–
–
–
–
100
100
20
20
nAEmitter cutoff current, VEB = 4 V IEB0 – – 100 –DC current gain1)
I
C = 100 µA, VCE = 1 V BCX 42
I
C = 10 mA, VCE = 5 V BSS 63
I
C = 20 mA, VCE = 5 V BSS 63
I
C = 100 mA, VCE = 1 V BCX 42
I
C = 200 mA, VCE = 1 V BCX 42
hFE 25
30
30
63
40
–
–
–
–
–
–
–
–
–
–VCollector-emitter saturation voltage1)
I
C = 300 mA, IB = 30 mA BCX 42
I
C = 25 mA, IB = 2.5 mA BSS 63
I
C = 75 mA, IB = 7.5 mA BSS 63
VCEsat –
–
–
–
–
–
0.9
0.25
0.9
Base-emitter saturation voltage1)
I
C = 300 mA, IB = 30 mA BCX 42 VBEsat – – 1.4
1
)P
u
l
se test: t≤ 300 µs, D= 2 %
Semiconductor Group 3
BCX 42
BSS 63
Total power dissipation Ptot =f(TA*; TS)
* Package mounted on epoxy
Permissible pulse load Ptot max/Ptot DC = f (tp)
Collector current IC=f(VBE)
VCE = 1 V
Transition frequency fT=f(IC)
VCE = 5 V
Semiconductor Group 4
BCX 42
BSS 63
Base-emitter saturation voltage
IC=f (VBEsat)
hFE = 10
Collector cutoff current ICB0 =f (TA)
VCB =VCEmax
Collector-emitter saturation voltage
IC=f (VCEsat)
hFE = 10
DC current gain hFE = f (IC)
VCE =1 V
