2SC2712-O
NPN
Plastic-Encapsulate
Transistors
Features
• Complementary to 2SA1162
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 50 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current 150 mA
PC Collector power dissipation 150 mW
TJ Junction Temperature -55 to +150 к
TSTG Storage Temperature -55 to +150 к
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
OFF CHARACTERISTICS
ICBO Collector Cutoff Current
(VCB=60Vdc,IE=0) --- --- 0.1 µA
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, IC=0) --- --- 0.1 µA
ON CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown
Voltage
(IC=1mA, IB=0) 50 --- --- V
V(BR)CBO Collector-Base Breakdown Voltage
(IC=100µA, IE=0) 60 --- --- V
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=100µA, IC=0) 5.0 --- --- V
hF DC Current Gain*
(IC=2mAdc, VCE=6.0Vdc) 70 --- 700 ---
VCE(sat) Collector Saturation Voltage*
(IC=-100mAdc, IB=10mAdc) --- 0.1 0.25 V
Cob Output Capacitance
(VCB=10V, IE=0, f=1MHz) --- 2.0 3.5 pF
fT Gain Bandwidth product
(VCE=10Vdc, IC=1mAdc) 80 --- --- MHz
NF Noise Figure
VCE=6V, IC=0.1mA, f=1KHz, Rg=10K
¡)--- 1.0 10 dB
CLASSIFICATION OF hFE
Rank O Y GR BL
Range 70-140 120-240 200-400 350-700
Marking LO LY LG LL
omponents
20736 Marilla Street Chatsworth
!"#
$% !"#
MCC
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .110 .120 2.80 3.04
B .083 .098 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
A
B
C
D
E
F
GH
.079
2.000 in
h
mm
.
1
.800
.035
.900
.
7
.950
.037
.950
K
Revision: A 2011/01/01
TM
Micro Commercial Components
E
B
C
www.mccsemi.com
1 of 3
2SC2712-Y
2SC2712-GR
2SC2712-BL
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1