ZXTD4591E6TA - DIODES INC - Datasheet.Support

ZXTD4591E6

Document Number: DS33652 Rev: 2 - 2

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COMPLEMENTARY 60V NPN/PNP MEDIUM POWER TRANSISTORS IN SOT26

Features

NPN Transistor

 BVCEO > 60V

 IC = 1A Continuous Collector Current

 Low Saturation Voltage (500mV max @ 1A)

 hFE characterised up to 2A

 RSAT = 210mΩ @1A for a Low Equivalent On-Resistance

PNP Transistor

 BVCEO > -60V

 IC = -1A Continuous Collector Current

 Low Saturation Voltage (-600mV max @ -1A)

 hFE characterised up to 2A

RSAT = 355mΩ @1A for a Low Equivalent On-Resistance

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT26

 Case Material: Molded Plastic, “Green” Molding Compound;

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – Matte Tin Plated Leads;

 Solderable per MIL-STD-202, Method 208

 Weight: 0.015 grams (Approximate)

Applications

 MOSFET Gate Driver

 Low Power Motor Drive

 Low Power DC-DC Converters

Ordering Information (Note 4)

Product

Compliance

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

ZXTD4591E6TA

AEC-Q101

4591

7

8

3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2015

2016

2017

2018

2019

2020

2021

2022

2023

2024

2025

Code

C

D

E

F

G

H

I

J

K

L

M

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Top View

Device Symbol

SOT26

Top View

Pin-Out

C1

E1

B1

C2

E2

B2

NPN Transistor

PNP Transistor

YM

4591

4591 = Product Type Marking Code

YM = Date Code Marking

Y or Y = Year (ex: C = 2015)

M or M = Month (ex: 9 = September)

SOT26

ZXTD4591E6

Document Number: DS33652 Rev: 2 - 2

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ZXTD4591E6

ADVANCE INFO R MA T I O N

NPN - Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

7

V

Peak Pulse Current

ICM

2

A

Continuous Collector Current

IC

1

A

Base Current

IB

500

mA

PNP - Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-80

V

Collector-Emitter Voltage

VCEO

-60

V

Emitter-Base Voltage

VEBO

-7

V

Peak Pulse Current

ICM

-2

A

Continuous Collector Current

IC

-1

A

Base Current

IB

-500

mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

Linear Derating Factor

(Note 6)

PD

1.1

8.8

W

mW/°C

(Note 7)

1.7

13.6

Thermal Resistance, Junction to Ambient

(Note 6)

RJA

113

°C/W

(Note 7)

73

Thermal Resistance, Junction To Lead

(Note 8)

RJL

74

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

ESD Ratings (Note 9)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Notes: 6. For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured

under still air conditions whilst operating in a steady-state. Two active dice running at equal power with heatsink split 50% to each collector.

7. Same as Note 6, except the device is measured at t < 5 seconds.

8. Thermal resistance from junction to solder-point (at the end of the collector lead).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

ZXTD4591E6

Document Number: DS33652 Rev: 2 - 2

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NPN - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BVCBO

80



V

IC = 100µA, IE = 0

Collector-Emitter Breakdown Voltage (Note 10)

BVCEO

60



V

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage

BVEBO

7



V

IE = 100µA, IC = 0

Collector Cut-Off Current

ICBO



100

nA

VCB = 60V

Emitter Cut-Off Current

IEBO



100

nA

VEB =5.6

Emitter Cut-Off Current

ICES



100

nA

VCE = 60V

ON CHARACTERISTICS (Note 10)

DC Current Gain

hFE

100

80

30







300





IC = 1mA, VCE = 5V

IC = 500mA, VCE = 5V

IC = 1A, VCE = 5V

IC = 2A, VCE = 5V

Collector-Emitter Saturation Voltage

VCE(sat)



0.25

0.5

V

IC = 500mA, IB = 50mA

IC = 1A, IB = 100mA

Base-Emitter Saturation Voltage

VBE(sat)



1.1

V

IC = 1A, IB = 100mA

Base-Emitter Turn-On Voltage

VBE(on)





1.0

V

IC = 1, VCE = 5V

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo



10

pF

VCB = 10V, f = 1.0MHz

Current Gain Bandwidth Product

fT

180





MHz

IC = 50mA, VCE = 10V

f = 100MHz

Note: 10. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%.

ZXTD4591E6

Document Number: DS33652 Rev: 2 - 2

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ZXTD4591E6

ADVANCE INFO R MA T I O N

NPN - Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

ZXTD4591E6

Document Number: DS33652 Rev: 2 - 2

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ZXTD4591E6

ADVANCE INFO R MA T I O N

PNP - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BVCBO

-80



V

IC = -100µA, IE = 0

Collector-Emitter Breakdown Voltage (Note 10)

BVCEO

-60



V

IC = -10mA, IB = 0

Emitter-Base Breakdown Voltage

BVEBO

-7



V

IE = -100µA, IC = 0

Collector Cut-Off Current

ICBO



-100

nA

VCB = -60V

Emitter Cut-Off Current

IEBO



-100

nA

VEB = -5.6V

Emitter Cut-Off Current

ICES



-100

nA

VCE = -60V

ON CHARACTERISTICS (Note 10)

DC Current Gain

hFE

100

80

15







300





IC = -1mA, VCE = -5V

IC = -500mA, VCE = -5V

IC = -1A, VCE = -5V

IC = -2A, VCE = -5V

Collector-Emitter Saturation Voltage

VCE(sat)



-0.3

-0.6

V

IC = -500mA, IB = -50mA

IC = -1A, IB = -100mA

Base-Emitter Saturation Voltage

VBE(sat)



-1.2

V

IC = -1A, IB = -100mA

Base-Emitter Turn-On Voltage

VBE(on)





-1.0

V

IC = -1A, VCE = -5V

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo



10

pF

VCB = -10V, f = 1.0MHz

Current Gain Bandwidth Product

fT

150



MHz

IC = -50mA, VCE = -10V

f = 100MHz

Note: 10. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%.

ZXTD4591E6

Document Number: DS33652 Rev: 2 - 2

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November 2015

ZXTD4591E6

ADVANCE INFO R MA T I O N

PNP - Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

ZXTD4591E6

Document Number: DS33652 Rev: 2 - 2

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ZXTD4591E6

ADVANCE INFO R MA T I O N

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

SOT26

Dim

Min

Max

Typ

A1

0.013

0.10

0.05

A2

1.00

1.30

1.10

A3

0.70

0.80

0.75

b

0.35

0.50

0.38

c

0.10

0.20

0.15

D

2.90

3.10

3.00

e

-

0.95

e1

-

1.90

E

2.70

3.00

2.80

E1

1.50

1.70

1.60

L

0.35

0.55

0.40

a

-

8°

a1

-

7°

All Dimensions in mm

Dimensions

Value (in mm)

C

2.40

C1

0.95

G

1.60

X

0.55

Y

0.80

Y1

3.20

a1

D

e

E1 E

b

A2 A1

Seating Plane

L

c

a

e1

A3

C1

Y1 G

X

Y

C

ZXTD4591E6

Document Number: DS33652 Rev: 2 - 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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