ZXTD4591E6 Features Mechanical Data NPN Transistor BVCEO > 60V IC = 1A Continuous Collector Current Low Saturation Voltage (500mV max @ 1A) hFE characterised up to 2A RSAT = 210m @1A for a Low Equivalent On-Resistance PNP Transistor BVCEO > -60V IC = -1A Continuous Collector Current Low Saturation Voltage (-600mV max @ -1A) hFE characterised up to 2A RSAT = 355m @1A for a Low Equivalent On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT26 Case: SOT26 Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (Approximate) Applications MOSFET Gate Driver Low Power Motor Drive Low Power DC-DC Converters C1 C2 B1 B2 E1 E2 NPN Transistor Top View Top View Pin-Out PNP Transistor Device Symbol Ordering Information (Note 4) Product ZXTD4591E6TA Notes: Compliance AEC-Q101 Marking 4591 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT26 4591 Date Code Key Year 2015 Code C Month Code 2016 D Jan 1 2017 E Feb 2 ZXTD4591E6 Document Number: DS33652 Rev: 2 - 2 Mar 3 2018 F Apr 4 YM ADVANCE INFORMATION COMPLEMENTARY 60V NPN/PNP MEDIUM POWER TRANSISTORS IN SOT26 2019 G May 5 4591 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: C = 2015) M or M = Month (ex: 9 = September) 2020 H Jun 6 1 of 8 www.diodes.com 2021 I Jul 7 2022 J Aug 8 2023 K Sep 9 Oct O 2024 L 2025 M Nov N Dec D November 2015 (c) Diodes Incorporated ZXTD4591E6 ADVANCE INFORMATION NPN - Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Symbol VCBO VCEO VEBO ICM IC IB Value 80 60 7 2 1 500 Unit V V V A A mA Value -80 -60 -7 -2 -1 -500 Unit V V V A A mA Value 1.1 8.8 1.7 13.6 113 73 74 -55 to +150 Unit PNP - Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Symbol VCBO VCEO VEBO ICM IC IB Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol (Note 6) Power Dissipation Linear Derating Factor PD (Note 7) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction To Lead Operating and Storage Temperature Range (Note 6) (Note 7) (Note 8) RJA RJL TJ, TSTG W mW/C C/W C/W C ESD Ratings (Note 9) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol Value Unit JEDEC Class ESD HBM ESD MM 4,000 400 V V 3A C 6. For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured under still air conditions whilst operating in a steady-state. Two active dice running at equal power with heatsink split 50% to each collector. 7. Same as Note 6, except the device is measured at t < 5 seconds. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTD4591E6 Document Number: DS33652 Rev: 2 - 2 2 of 8 www.diodes.com November 2015 (c) Diodes Incorporated ZXTD4591E6 ADVANCE INFORMATION NPN - Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 10) Symbol Min Typ Max Unit BVCBO BVCEO BVEBO ICBO IEBO ICES 80 60 7 100 100 100 V V V nA nA nA hFE 100 100 80 30 Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance VBE(sat) VBE(on) 300 0.25 0.5 1.1 1.0 Cobo 10 pF fT 180 MHz DC Current Gain Current Gain Bandwidth Product Note: V V V V Test Condition IC = 100A, IE = 0 IC = 10mA, IB = 0 IE = 100A, IC = 0 VCB = 60V VEB =5.6 VCE = 60V IC = 1mA, VCE = 5V IC = 500mA, VCE = 5V IC = 1A, VCE = 5V IC = 2A, VCE = 5V IC = 500mA, IB = 50mA IC = 1A, IB = 100mA IC = 1A, IB = 100mA IC = 1, VCE = 5V VCB = 10V, f = 1.0MHz IC = 50mA, VCE = 10V f = 100MHz 10. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. ZXTD4591E6 Document Number: DS33652 Rev: 2 - 2 3 of 8 www.diodes.com November 2015 (c) Diodes Incorporated ZXTD4591E6 ADVANCE INFORMATION NPN - Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) ZXTD4591E6 Document Number: DS33652 Rev: 2 - 2 4 of 8 www.diodes.com November 2015 (c) Diodes Incorporated ZXTD4591E6 ADVANCE INFORMATION PNP - Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 10) Symbol Min Typ Max Unit BVCBO BVCEO BVEBO ICBO IEBO ICES -80 -60 -7 -100 -100 -100 V V V nA nA nA hFE 100 100 80 15 Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance VBE(sat) VBE(on) 300 -0.3 -0.6 -1.2 -1.0 Cobo 10 pF fT 150 MHz DC Current Gain Current Gain Bandwidth Product Note: V V V V Test Condition IC = -100A, IE = 0 IC = -10mA, IB = 0 IE = -100A, IC = 0 VCB = -60V VEB = -5.6V VCE = -60V IC = -1mA, VCE = -5V IC = -500mA, VCE = -5V IC = -1A, VCE = -5V IC = -2A, VCE = -5V IC = -500mA, IB = -50mA IC = -1A, IB = -100mA IC = -1A, IB = -100mA IC = -1A, VCE = -5V VCB = -10V, f = 1.0MHz IC = -50mA, VCE = -10V f = 100MHz 10. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. ZXTD4591E6 Document Number: DS33652 Rev: 2 - 2 5 of 8 www.diodes.com November 2015 (c) Diodes Incorporated ZXTD4591E6 ADVANCE INFORMATION PNP - Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) ZXTD4591E6 Document Number: DS33652 Rev: 2 - 2 6 of 8 www.diodes.com November 2015 (c) Diodes Incorporated ZXTD4591E6 Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D E1 SOT26 Dim Min Max Typ A1 0.013 0.10 0.05 A2 1.00 1.30 1.10 A3 0.70 0.80 0.75 b 0.35 0.50 0.38 c 0.10 0.20 0.15 D 2.90 3.10 3.00 e 0.95 e1 1.90 E 2.70 3.00 2.80 E1 1.50 1.70 1.60 L 0.35 0.55 0.40 a 8 a1 7 All Dimensions in mm E b a1 e1 A2 A3 A1 Seating Plane e c L a Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C1 Y1 G Dimensions Value (in mm) C 2.40 C1 0.95 G 1.60 X 0.55 Y 0.80 Y1 3.20 C Y X ZXTD4591E6 Document Number: DS33652 Rev: 2 - 2 7 of 8 www.diodes.com November 2015 (c) Diodes Incorporated ZXTD4591E6 IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2015, Diodes Incorporated www.diodes.com ZXTD4591E6 Document Number: DS33652 Rev: 2 - 2 8 of 8 www.diodes.com November 2015 (c) Diodes Incorporated