SEMICONDUCTOR VV TECHNICAL DATA ga - fore 2N3762 @ 2N3763 : 2N3764 ON 3765 CRYSTALONCS 2805 Veterans Highway Suite 14 PNP Silicon Ronkonkoma, N.Y. 11779 Small-Signal Transistors _ designed tor general-purpose switching applications CASE 78-04 TO-205AD (TO-39) Lo MAXIMUM RATINGS 2N3762 2N3763 Symbol 2N3764 2N3765 Unit ay VcEO 40 60 Vde VoBO a0 60 vide Emitter-Base Voltage VEBO 5.0 : 5.0 Vdc Collector Current Continuous lc 15 1.5 Adc Device Dissipation Py @Tp-25C 4.0 0.5* Watts Derate above 25 a ze mwerc Operating Junction and Storage T). Teta -55 to 200 C Temperature Range i *PN3PG2 ONI7ET *2NU7Ad, ONATER ASSURANCE TESTING (Pre/Post Burn-in) Burnin Conditions: Ta = 30 45C, Vop = 30 Vde 2NS7E2,84, 40 Vdc 2N3763,65, 10 Vdc JANS Prai 0 W 2N3762,63, 0.5 W 2N3764,66 Initiel and End Point Limite Characteristics Tested Symbol Min Mex Unit Collector Cutoff Current Ica0 nade (Vcp = 20 Vee) 2N3762, 2N3764 - 400 (Veg = 30 Vdc) 2N3763, 2N3765 - 100 DC Current Gain(1) rE 40 140 _ (ig = 500 mAdc, VcE = 1.0 Vdc) Deita from Pre-Burn-in Measured Values ain Wax Delta Collector Cutoff Current AICEX - 100 % of Initial Value nade or +10 whichever is greater Detta DC Current Gain(?) anrE _ +15 % ot Initial Value (1) Pulsed Pulse Width 250 to 350 1s. Duty Cycle 1 0 to 20%2N3762JAN THRU 2N3765JAN SERIES CRYSTALONCS 2805 Veterans Highway Suite 74 LECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted.) Ronkonk. N Characteristic T Symbol Min Max Unit onkoma, N.Y. 11779 OFF CHARACTERISTICS Collector-Emitter Breakdown Vottage!1) 2N3762. 2N3764 | ViaR)CEO 40 = Vde (Ig = 10 made, Ig = 0} 2N3763, 2N3765 60 oa Collector-Base Breakdown Voltage 2N3762, 2N3764 ViBR)CBO 40 _ Vde (Ig = 10 pAde, ig = 0) 2N3763, 2N3765 60 _ Emitter-Base Breakdown Voltage (IE = 10 pAdc. Ic = 0) V(BRJEBO 5.0 Vde Coliector Cutoff Current \cEX wAde (Vop = 20 Vde. Vep = 2.0 Vde) 2N3762, 2N3764 = 0.1 \Vop = 20 Vee, Veg = 2.0 Vdc. Ta = 150C) 7 i Veg = 30 Vde, Veg = 2.0 Vd) 2N3763, 2N3765 a ret (Vcp = 30 Vde, Veg = 2.0 Vie, Ta = 150C) 7 oa Collector Cutoff Current IcBo Ade (Vp = 20 Vdc) 2N39762, 2N3764 _ 0.1 (Vcp = 30 Vde} 2N3763, 2N37E5 ad 01 Emitter Cutotf Current (VER = 2.0 Vdc, Ic = 0) leEBO a 02 pAdc ON CHARACTERISTICS DC Currant Gain hee _ (Ig = 10 mAdc, VcE = 1.0 Vde) 35 - (ig = 150 mAde, VcE = 1.0 Vde)(1) 40 = (ig = 500 mAde, Vcg = 1.0 Vde){ 1) 40 140 (ig = 1.0 Adc. Ve = 1.5 Vde)") 2N3762, 2N3764 30 120 2N3763, 2N3765 20 80 (Ic = 1.5 Ade, Voce = 5.0 Vde)(1) 2N3762, 2N3764 30 _ 2N3763. 2N3765 20 aa (Ic = 500 mAde, Veg = 1.0 Vde, Ta = -55C)!1) 20 _ Collector-Emitter Saturation Vottage(") VCE (sat) Vee {ig = 10 mAde, Ip = 1.0 mAdc) a 0.1 (Io = 150 mAdc, ig = 15 mAdc) a 0.22 (Ig = 500 mAdc, Ig = 50 mAdc) = 05 (ig = 1.0 Adc, Ip = 100 mAde) a 09 ase-Emitter Saturation Valtage(") VBE(sat) Vde (lg = 10 mAdc, Ig = 1.0 mAdc) = 08 (i = 150 mAdc, Ig = 15 mAdc) = 1.0 (Ic = 500 mAdc. Ig = 50 mAdc) _ 1.2 Ig = 1.0 Adc. Ig = 100 mAdc) 09 14 SMALL-SIGNAL CHARACTERISTICS Output Capacitance (Vcp = 10 Vdc. t= 0.1 to 1.0 MHz) Cobo ~ 15 pF input Capacitance (Veg = 0.5 Vdc, f= 0.1 to 1.0 MHz) Cibo _- 80 pF Smail-Signat Current Transter Ratio, Magnitude Ihfel _ (Ic = 50 mAde, VCE = 10 Vde, f = 100 MHz) 2N3762. 2N3764 18 6.0 2N3763, 2N3765 1.5 60 SWITCHING CHARACTERISTICS (See Figure 37) (Vgc = 30 Vde, ig = 1.0 mAdc, Ip = 100 mAdc) Delay Time tg - 8.0 ng Rise Time ly _ 35 ns Storage Time ts a 80 ns Fail Time tt _ 35 ns 11) Pulsed Pulse Width 250 to 350 ys. Duty Cycle 1.0 to 2 0%