TLP180
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & PhotoTransistor
TLP180
Programmable Controllers
AC / DCInput Module
Telecommunication
The TOSHIBA mini flat coupler TLP180 is a small outline coupler,
suitable for surface mount assembly.
TLP180 consist of a photo transistor, optically coupled to a gallium
arsenide infrared emitting diode connected inverse parallel, and can
operate directly by AC input current.
· Collectoremitter voltage: 80 V (min.)
· Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
· Isolation voltage: 3750Vrms (min.)
· UL recognized: UL1577, file No. E67349
Pin Configuration (top view)
6
1: Anode, Cathode
3: Cathode, Anode
4: Emitter
6: Collector
4
1
3
TOSHIBA 114C1
Weight: 0.09 g
Unit in mm
TLP180
2002-09-25
2
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF(RMS) ±50 mA
Forward current detating (Ta53°C) IF / °C -0.7 mA / °C
Pulse forward current (Note1) IFP ±1 A
LED
Junction temperature Tj 125 °C
Collector-emitter voltage VCEO 80 V
Emitter-collector voltage VECO 7 V
Collector current IC 50 mA
Power dissipation PC 150 mW
Power dissipation derating (Ta 25°C) PC / °C -1.5 mW / °C
Detector
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Operating temperature range Topr -55~100 °C
Lead soldering temperature(10s) Tsol 260 °C
Total package power dissipation PT 200 mW
Total package power dissipation derating (Ta 25°C) PT / °C -2.0 mW / °C
Isolation voltage (AC,1min.,R.H. 60%) (Note 2) BVS 3750 Vrms
Note 1: Pulse width 100µs,f=100Hz
Note 2: Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VCC 5 48 V
Forward current IF(RMS) 16 20 mA
Collector current IC 1 10 mA
Operating temperature Topr -25 85 °C
TLP180
2002-09-25
3
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF I
F = ±10 mA 1.0 1.15 1.3 V
LED
Capacitance CT V = 0, f = 1 MHz 60 pF
Collector-emitter
breakdown voltage V(BR) CEO IC = 0.5 mA 80 V
Emitter-collector
breakdown voltage V(BR) ECO IE = 0.1 mA 7 V
VCE = 48 V (ambient light
below 1000Lx)
(Note3)
0.01
(2)
0.1
(10) µA
Collector dark current ICEO VCE = 48 V (ambient light
Ta = 85°C below 1000Lx)
(Note3)
2
(4)
50
(50) µA
Detector
Capacitance
(collector to emitter) CCE V = 0, f = 1 MHz 10 pF
Note 3: Please use standard electric lamp to light up the device's marking surface.
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition MIn. Typ. Max. Unit
50 — 600
Current transfer ratio IC / IF IF = ±5 mA, VCE = 5 V
Rank GB 100 — 600
%
— 60 —
Saturated CTR IC / IF (sat) IF = ±1 mA, VCE = 0.4 V
Rank GB 30 —
%
IC = 2.4 mA, IF = ±8 mA 0.4
— 0.2 —
Collector-emitter
saturation voltage VCE (sat) IC = 0.2 mA, IF = ±1 mA
Rank GB — — 0.4
V
Off-state collector current IC(off) V
F = ± 0.7V, VCE = 48 V 1 10 µA
CTR symmetry IC (ratio) IC (IF = -5mA) / IC (IF = 5mA)
(Note4) 0.33 1 3
Note 4 : IC(ratio)= 5V)
CE
V,
F1
I
F
(I
C1
I
5V)
CE
V,
F2
I
F
(I
C2
I
==
==
IC1
IC2
VCE
IF1
IF2
TLP180
2002-09-25
4
Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Capacitance input to output CS VS = 0V, f = 1 MHz 0.8 pF
Isolation resistance RS VS = 500 V, R.H. 60% 5×1010 1014
AC, 1 minute 3750
AC, 1 second, in oil 10000
Vrms
Isolation voltage BVS
DC, 1 minute, in oil 10000 V
dc
Swiching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Rise time tr 2
Fall time tf 3
Turn-on time ton 3
Turn-off time toff
VCC = 10 V, IC = 2 mA
RL = 100
3
µs
Turn-on time tON 2
Storage time ts 25
Turn-off time tOFF
RL = 1.9 k (Fig.1)
VCC = 5 V, IF = ±16 mA
40
µs
Fig. 1: Switching time test circuit
tOFF
tON
VCE
IF
tS VCC
4.5V
0.5V
VCC
RL
IF
VCE
TLP180
2002-09-25
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PC – Ta
200
-20 0 20 40 60 80 100 120
160
120
80
40
0
Allowable collector power
dissipation PC (mW)
Ambient temperature Ta (°C)
IFP – DR
Duty cycle ratio DR
Pulse forward current IFP (mA)
3000
10
3
Pulse width 100µs
Ta = 25°C
10
-3 3 10
-23 101 3 100
30
50
100
300
1000
500
VF / Ta IF
Forward current IF (mA)
Forward voltage temperature
coefficient VF / Ta (mV / °C)
-3.2
-0.4
0.1
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
0.3 0.5 1 3 5 10 30 50
IFP – VFP
Pulse forward voltage VFP (V)
1000
1
0.6
500
300
100
50
30
10
5
3
1.0 1.4 1.8 2.2 2.6 3.0
Pulse width 10µs
Repetitive
frequency = 100Hz
Ta = 25°C
Pulse forward current IFP (mA)
IFTa
Ambient temperature Ta (°C)
Allowable forward current
IF (mA)
100
-20
80
60
40
20
0
0 20 40 60 80 100 120
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.001
0
10
1
0.1
0.01
0.4 0.8 1.2 1.6 2
-25°C 85°C 25
°C
25
°C
TLP180
2002-09-25
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Collector current IC (mA)
IC – VCE
50
0
Collector-emitter voltage VCE (V)
0
40
30
20
10
2 4 6 8 10
50mA
30
m
A
20mA
15m
A
1
0
m
A
PC(MAX.)
IF = 5mA
Ta = 25°C
Collector-emitter voltage VCE (V)
Forward current IF (mA)
IC / IF – IF
Current transfer ratio
I
C / IF (%)
1000
10
0.1 0.3 0.5 1 3 5 10 30 50
30
50
100
300
500
VCE = 10V
VCE = 5V
VCE = 0.4V
Ta = 25°C
Sample B
Sample A
Collector dark current ID(ICEO) (µA)
ICEOTa
Ambient temperature Ta (°C)
0
101
VCE = 48
V
5V
10V
24V
20 40 60 80 100
100
10
-1
10
-2
10
-3
10
-4
IC – IF
Forward current IF (mA)
Collector current IC (mA)
0.1
0.1
0.3
0.5
1
3
5
10
30
50
100
0.3 0.5 1 3 5 10 30 50
Sample
A
Sample B
Ta = 25°C
VCE = 10V
VCE = 5V
VCE = 0.4V
IC – VCE
30
00 1.0
0.2 0.4 0.6 0.8
20
10
Collector current IC (mA)
50mA
Ta = 25°C
40mA
30mA
20mA
10mA
TLP180
2002-09-25
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VCE(sat)Ta
Ambient temperature Ta (°C)
Collector-emitter saturation
voltage VCE(sat) (V)
0.24
0
-40
0.20
0.12
0.08
0.04
-20 0 40 80 100 20 60
0.16
IF = 5mA, IC = 1mA
IF = 1mA, IC = 0.2mA
IF = 1mA
IC = 0.2mA
IC – Ta
Collector current IC (mA)
100
1
-20 100
0 20 40 80
30
5
60
0.1
0.3
0.5
3
10
50
VCE = 5V
1m
0.5mA
10mA
IF = 25m
A
Ambient temperature Ta (°C)
Switching Time – RL
Load resistance RL (k)
1
10
30
50
100
300
500
1000
3 5 30 50
Switching time (µs)
5
3
1
Ta = 25°C
IF = 16mA
VCC = 5V
tOFF
ts
tON
100 10
Switching time (µs)
Switching Time Ta
0
160
-20 20 40 60 80
Ambient temperature Ta (°C)
30
10
1
0.5
0.1
100
0.3
3
5
50 tOFF
ts
tON
IF = 16mA
VCC = 5V
RL = 1.9k
TLP180
2002-09-25
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· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
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· The information contained herein is subject to change without notice.
000707EBC
RESTRICTIONS O N PRODUCT USE