QS8K2
30V Nch +Nch Middle Power MOSFET Datasheet
llOutline
VDSS 30V TSMT8
RDS(on)(Max.) 54mΩ
ID±3.5A
PD1.5W
llFeatures ll Inner circuit
1) Low on - resistance.
2) Built-in G-S protection diode.
3) Small surface mount package(TSMT8)
4) Pb-free lead plating ; RoHS compliant
llPackaging specifications
Type
Packing Embossed
Tape
llApplication Reel size (mm) 180
Switching Tape width (mm) 8
Basic ordering unit (pcs) 3000
Taping code TR
Marking K02
llAbsolute maximum ratings (Ta = 25°C) <It is the same ratings for the Tr1 and Tr2>
Parameter Symbol Value Unit
Drain - Source voltage VDSS 30 V
Continuous drain current ID±3.5 A
Pulsed drain current ID,pulse*1 ±12 A
Gate - Source voltage VGSS ±12 V
Power dissipation
total PD*2 1.5
W element 1.25
total PD*3 0.7
Junction temperature Tj150 ℃
Range of storage temperature Tstg -55 to +150 ℃
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© 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001
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QS8K2 Datasheet
llThermal resistance
Parameter Symbol Values Unit
Min. Typ. Max.
Thermal resistance, junction - ambient
total RthJA
*2 - - 83.3
℃/W element - - 100
total RthJA
*3 - - 178
llElectrical characteristics (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Drain - Source breakdown
voltage V(BR)DSS VGS = 0V, ID = 1mA 30 - - V
Breakdown voltage
temperature coefficient
ΔV(BR)DSS ID = 1mA - 29 - mV/℃
ΔTj referenced to 25℃
Zero gate voltage
drain current IDSS VDS = 30V, VGS = 0V - - 1 μA
Gate - Source
leakage current IGSS VDS = 0V, VGS = ±12V - - ±10 μA
Gate threshold
voltage VGS(th) VDS = 10V, ID = 1mA 0.5 - 1.5 V
Gate threshold voltage
temperature coefficient
ΔVGS(th) ID = 1mA - -1.6 - mV/℃
ΔTj referenced to 25℃
Static drain - source
on - state resistance RDS(on)*4
VGS = 4.5V, ID = 3.5A - 38 54
mΩ VGS = 4V, ID = 3.5A - 40 56
VGS = 2.5V, ID = 3.5A - 55 77
Gate input resistance RG f = 1MHz, open drain - 8 - Ω
Forward Transfer
Admittance |Yfs|*4 VDS = 10V, ID = 3.5A 3.0 - - S
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© 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.001
Not Recommended for
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QS8K2 Datasheet
llElectrical characteristics (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Input capacitance Ciss VGS = 0V - 285 -
pF
Output capacitance Coss VDS = 10V - 90 -
Reverse transfer capacitance Crss f = 1MHz - 55 -
Turn - on delay time td(on)*4 VDD ⋍ 15V,VGS = 4.5V - 8 -
ns
Rise time tr*4 ID = 1.7A - 12 -
Turn - off delay time td(off)*4 RL = 8.8Ω - 29 -
Fall time tf*4 RG = 10Ω - 13 -
llGate charge characteristics (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Total gate charge Qg*4 VDD ⋍ 15V - 4.6 -
nC
Gate - Source charge Qgs*4 ID = 3.5A - 0.7 -
Gate - Drain charge Qgd*4 VGS = 4.5V - 1.5 -
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
<It is the same characteristics for the Tr1 and Tr2>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Body diode continuous
forward current IS
Ta = 25℃
- - 1
A
Body diode
pulse current ISP*1 - - 12
Forward voltage VSD*4 VGS = 0V, IS = 3.5A - - 1.2 V
*1 Pw≦10μs , Duty cycle≦1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (20×20×0.8mm)
*4 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved. 3/11 20150730 - Rev.001
Not Recommended for
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QS8K2 Datasheet
llElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2015 ROHM Co., Ltd. All rights reserved. 4/11 20150730 - Rev.001
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QS8K2 Datasheet
llElectrical characteristic curves
Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
Junction Temperature
Fig.8 Typical Transfer Characteristics
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© 2015 ROHM Co., Ltd. All rights reserved. 5/11 20150730 - Rev.001
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QS8K2 Datasheet
llElectrical characteristic curves
Fig.9 Gate Threshold Voltage vs.
Junction Temperature
Fig.10 Forward Transfer Admittance vs.
Drain Current
Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
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© 2015 ROHM Co., Ltd. All rights reserved. 6/11 20150730 - Rev.001
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QS8K2 Datasheet
llElectrical characteristic curves
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current (I)
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© 2015 ROHM Co., Ltd. All rights reserved. 7/11 20150730 - Rev.001
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QS8K2 Datasheet
llElectrical characteristic curves
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current (II)
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current (IlI)
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current (IV)
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© 2015 ROHM Co., Ltd. All rights reserved. 8/11 20150730 - Rev.001
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QS8K2 Datasheet
llElectrical characteristic curves
Fig.18 Typical Capacitance vs.
Drain - Source Voltage
Fig.19 Switching Characteristics
Fig.20 Dynamic Input Characteristics Fig.21 Source Current vs.
Source Drain Voltage
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© 2015 ROHM Co., Ltd. All rights reserved. 9/11 20150730 - Rev.001
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QS8K2 Datasheet
llMeasurement circuits <It is the same for the Tr1 and Tr2>
Fig. 1-1 SWITCHING TIME MEASUREMENT CIRCUIT Fig. 1-2 SWITCHING WAVEFORMS
Fig. 2-1 GATE CHARGE MEASUREMENT CIRCUIT Fig. 2-2 GATE CHARGE WAVEFORM
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© 2015 ROHM Co., Ltd. All rights reserved. 10/11 20150730 - Rev.001
Not Recommended for
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QS8K2 Datasheet
llDimensions
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© 2015 ROHM Co., Ltd. All rights reserved. 11/11 20150730 - Rev.001
Not Recommended for
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Not Recommended for
New Designs
