QS8K2 Datasheet 30V Nch +Nch Middle Power MOSFET l Outline RDS(on)(Max.) 54m ID 3.5A e N co ew m m D es en ig de ns d f 30V PD l Features or TSMT8 VDSS 1.5W l Inner circuit 1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(TSMT8) 4) Pb-free lead plating ; RoHS compliant l Packaging specifications Packing l Application Switching Type Reel size (mm) 180 Tape width (mm) 8 Basic ordering unit (pcs) R Embossed Tape 3000 Taping code TR Marking K02 ot l Absolute maximum ratings (Ta = 25C) <It is the same ratings for the Tr1 and Tr2> Parameter N Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage total Power dissipation Value Unit VDSS 30 V ID 3.5 A ID,pulse*1 12 A VGSS 12 V PD*2 element total Junction temperature Range of storage temperature www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. Symbol 1/11 1.5 1.25 W PD*3 0.7 Tj 150 Tstg -55 to +150 20150730 - Rev.001 QS8K2 Datasheet l Thermal resistance Symbol total Thermal resistance, junction - ambient element total RthJA*2 RthJA*3 Values Min. Typ. Max. - - 83.3 - - 100 - - 178 Unit /W or Parameter e N co ew m m D es en ig de ns d f l Electrical characteristics (T a = 25C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Drain - Source breakdown voltage Breakdown voltage temperature coefficient Conditions V(BR)DSS VGS = 0V, ID = 1mA V(BR)DSS ID = 1mA Values Unit Min. Typ. Max. 30 - - V - 29 - mV/ Tj referenced to 25 Zero gate voltage drain current IDSS VDS = 30V, VGS = 0V - - 1 A Gate - Source leakage current IGSS VDS = 0V, VGS = 12V - - 10 A Gate threshold voltage VGS(th) VDS = 10V, ID = 1mA 0.5 - 1.5 V - -1.6 - mV/ - 38 54 - 40 56 VGS = 2.5V, ID = 3.5A - 55 77 RG f = 1MHz, open drain - 8 - |Yfs| *4 VDS = 10V, ID = 3.5A 3.0 - - S Gate threshold voltage temperature coefficient VGS(th) ID = 1mA Tj referenced to 25 VGS = 4.5V, ID = 3.5A R Static drain - source on - state resistance ot Gate input resistance m N Forward Transfer Admittance RDS(on)*4 VGS = 4V, ID = 3.5A www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.001 QS8K2 Datasheet l Electrical characteristics (Ta = 25C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Conditions Values Min. Typ. Max. Ciss VGS = 0V - 285 - Output capacitance Coss VDS = 10V - 90 - Reverse transfer capacitance Crss f = 1MHz - VDD 15V,VGS = 4.5V - Rise time Turn - off delay time Fall time td(on)*4 55 - 8 - e N co ew m m D es en ig de ns d f Turn - on delay time pF or Input capacitance Unit tr*4 ID = 1.7A - 12 - td(off)*4 RL = 8.8 - 29 - tf*4 RG = 10 - 13 - ns l Gate charge characteristics (Ta = 25C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Conditions Values Min. Typ. Max. Total gate charge Qg*4 VDD 15V - 4.6 - Gate - Source charge Qgs*4 ID = 3.5A - 0.7 - Gate - Drain charge Qgd*4 VGS = 4.5V - 1.5 - Unit nC l Body diode electrical characteristics (Source-Drain) (Ta = 25C) R <It is the same characteristics for the Tr1 and Tr2> Parameter ot Body diode continuous forward current Symbol IS Values Min. Typ. Max. - - 1 Ta = 25 Body diode pulse current ISP*1 Forward voltage VSD*4 N Conditions VGS = 0V, IS = 3.5A Unit A - - 12 - - 1.2 V *1 Pw10s , Duty cycle1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (20x20x0.8mm) *4 Pulsed www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 3/11 20150730 - Rev.001 QS8K2 Datasheet l Electrical characteristic curves Fig.2 Maximum Safe Operating Area e N co ew m m D es en ig de ns d f or Fig.1 Power Dissipation Derating Curve Fig.4 Single Pulse Maximum Power dissipation N ot R Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 4/11 20150730 - Rev.001 QS8K2 Datasheet l Electrical characteristic curves Fig.6 Typical Output Characteristics(II) e N co ew m m D es en ig de ns d f or Fig.5 Typical Output Characteristics(I) Fig.8 Typical Transfer Characteristics N ot R Fig.7 Breakdown Voltage vs. Junction Temperature www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 5/11 20150730 - Rev.001 QS8K2 Datasheet l Electrical characteristic curves Fig.10 Forward Transfer Admittance vs. Drain Current e N co ew m m D es en ig de ns d f or Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage N ot R Fig.11 Drain Current Derating Curve www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 6/11 20150730 - Rev.001 QS8K2 Datasheet l Electrical characteristic curves Fig.14 Static Drain - Source On - State Resistance vs. Drain Current (I) N ot R e N co ew m m D es en ig de ns d f or Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 7/11 20150730 - Rev.001 QS8K2 Datasheet l Electrical characteristic curves Fig.16 Static Drain - Source On - State Resistance vs. Drain Current (IlI) e N co ew m m D es en ig de ns d f or Fig.15 Static Drain - Source On - State Resistance vs. Drain Current (II) N ot R Fig.17 Static Drain - Source On - State Resistance vs. Drain Current (IV) www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 8/11 20150730 - Rev.001 QS8K2 Datasheet l Electrical characteristic curves Fig.19 Switching Characteristics e N co ew m m D es en ig de ns d f or Fig.18 Typical Capacitance vs. Drain - Source Voltage Fig.21 Source Current vs. Source Drain Voltage N ot R Fig.20 Dynamic Input Characteristics www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 9/11 20150730 - Rev.001 QS8K2 Datasheet l Measurement circuits <It is the same for the Tr1 and Tr2> Fig. 1-2 SWITCHING WAVEFORMS e N co ew m m D es en ig de ns d f or Fig. 1-1 SWITCHING TIME MEASUREMENT CIRCUIT Fig. 2-2 GATE CHARGE WAVEFORM N ot R Fig. 2-1 GATE CHARGE MEASUREMENT CIRCUIT www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 10/11 20150730 - Rev.001 QS8K2 Datasheet N ot R e N co ew m m D es en ig de ns d f or l Dimensions www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 11/11 20150730 - Rev.001 N R e N co ew m m D es en ig de ns d f ot or