QS8K2 Datasheet
llElectrical characteristics (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Input capacitance Ciss VGS = 0V - 285 -
pF
Output capacitance Coss VDS = 10V - 90 -
Reverse transfer capacitance Crss f = 1MHz - 55 -
Turn - on delay time td(on)*4 VDD ⋍ 15V,VGS = 4.5V - 8 -
ns
Rise time tr*4 ID = 1.7A - 12 -
Turn - off delay time td(off)*4 RL = 8.8Ω - 29 -
Fall time tf*4 RG = 10Ω - 13 -
llGate charge characteristics (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Total gate charge Qg*4 VDD ⋍ 15V - 4.6 -
nC
Gate - Source charge Qgs*4 ID = 3.5A - 0.7 -
Gate - Drain charge Qgd*4 VGS = 4.5V - 1.5 -
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
<It is the same characteristics for the Tr1 and Tr2>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Body diode continuous
forward current IS
Ta = 25℃
- - 1
A
Body diode
pulse current ISP*1 - - 12
Forward voltage VSD*4 VGS = 0V, IS = 3.5A - - 1.2 V
*1 Pw≦10μs , Duty cycle≦1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (20×20×0.8mm)
*4 Pulsed
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