© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 13
1Publication Order Number:
BD675/D
BD675, BD675A, BD677,
BD677A, BD679, BD679A,
BD681
BD681 is a Preferred Device
Plastic Medium-Power
Silicon NPN Darlingtons
This series of plastic, medium−power silicon NPN Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
•High DC Current Gain:
hFE = 750 (Min) @ IC
= 1.5 and 2.0 Adc
•Monolithic Construction
•BD675, 675A, 677, 677A, 679, 679A, 681 are complementary
with BD676, 676A, 678, 678A, 680, 680A, 682
•BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
•Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Value
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage BD675, A
BD677, A
BD679, A
BD681
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VCEO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
45
60
80
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector−Base Voltage BD675, A
BD677, A
BD679, A
BD681
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VCBO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
45
60
80
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Emitter−Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VEBO
ÎÎÎÎ
ÎÎÎÎ
5.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector Current
ÎÎÎÎ
ÎÎÎÎ
IC
ÎÎÎÎ
ÎÎÎÎ
4.0
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎ
ÎÎÎÎ
IB
ÎÎÎÎ
ÎÎÎÎ
1.0
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25°C
Derate above 25°C
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
PD
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
40
0.32
ÎÎÎ
ÎÎÎ
ÎÎÎ
W
W/°C
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
TJ, Tstg
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
– 55 to + 150
ÎÎÎ
ÎÎÎ
ÎÎÎ
°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance,
Junction−to−Case
ÎÎÎÎ
ÎÎÎÎ
qJC
ÎÎÎÎ
ÎÎÎÎ
3.13
ÎÎÎ
ÎÎÎ
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS, 40 WATTS
TO−225AA
CASE 77
STYLE 1
MARKING DIAGRAMS
YWW
BD6xxG
321
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
BD6xx = Device Code
x = 75, 77, 79, 81
Y = Year
WW = Work Week
G=Pb−Free Package
YWW
B
BD6xxAG
COLLECTOR 2
BASE
3
EMITTER 1
BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
Min
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Breakdown Voltage, (Note 1) BD675, 675A
(IC = 50 mAdc, IB = 0) BD677, 677A
BD679, 679A
BD681
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
BVCEO
45
60
80
100
−
−
−
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ICEO
−
500
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = Rated BVCEO, IE = 0)
(VCB = Rated BVCEO, IE = 0, TC = 100’C)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ICBO
−
−
0.2
2.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
IEBO
—
2.0
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Currert Gain, (Note 1)
(IC = 1.5 Adc,VCE = 3.0 Vdc) BD675, 677, 679, 681
(IC = 2.0 Adc, VCE = 3.0 Vdc) BD675A, 677A, 679A
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
hFE
750
750
−
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage, (Note 1)
(IC = 1.5 Adc, IB = 30 mAdc) BD677, 679, 681
(IC = 2.0 Adc, IB = 40 mAdc) BD675A, 677A, 679A
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VCE(sat)
−
−
2.5
2.8
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage, (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc) BD677, 679, 681
(IC = 2.0 Adc, VCE = 3 0 Vdc) BD675A, 677A, 679A
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VBE(on)
−
−
2.5
2.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎ
ÎÎÎÎ
hfe
1.0
−
ÎÎÎ
ÎÎÎ
−
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
50
40
10
5.0
015 30 45 60 75 105 135 150 165
Figure 1. Power Temperature Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
12090
45
20
15
30
25
35
Figure 2. DC Safe Operating Area
5.0
1.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
1.0
0.5
0.05 2.0 5.0 10 50 100
BONDING WIRE LIMIT
THERMALLY LIMIT at TC = 25°C
SECONDARY BREAKDOWN LIMIT
0.2
0.1
IC, COLLECTOR CURRENT (AMP)
TC = 25°C
BD675, 675A
BD677, 677A
BD679, 679A
BD681
20
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681
http://onsemi.com
3
Figure 3. Darlington Circuit Schematic
BASE
NPN
BD675, 675A
BD677, 677A
BD679, 679A
BD681
COLLECTOR
EMITTER
[ 8.0 k [ 120
ORDERING INFORMATION
Device Package Shipping
BD675 TO−225AA 500 Units / Box
BD675G TO−225AA
(Pb−Free)
500 Units / Box
BD675A TO−225AA 500 Units / Box
BD675AG TO−225AA
(Pb−Free)
500 Units / Box
BD677 TO−225AA 500 Units / Box
BD677G TO−225AA
(Pb−Free)
500 Units / Box
BD677A TO−225AA 500 Units / Box
BD677AG TO−225AA
(Pb−Free)
500 Units / Box
BD679 TO−225AA 500 Units / Box
BD679G TO−225AA
(Pb−Free)
500 Units / Box
BD679A TO−225AA 500 Units / Box
BD679AG TO−225AA
(Pb−Free)
500 Units / Box
BD681 TO−225AA 500 Units / Box
BD681G TO−225AA
(Pb−Free)
500 Units / Box
BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681
http://onsemi.com
4
PACKAGE DIMENSIONS
TO−225AA
CASE 77−09
ISSUE Z
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077-01 THRU -08 OBSOLETE, NEW STANDARD
077-09.
−B−
−A−M
K
FC
Q
H
V
G
S
D
J
R
U
132
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.065 1.15 1.65
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 --- 1.02 ---
__
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BD675/D
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