SRANSYS MMBT3904 FLECTRONICS NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LIMITED Features Epitaxial Planar Die Construction Complementary PNP Type Available SOT-23 (MMBT3906) | joa Dim | Min | Max Ideal for Medium Power Amplification and [ce] A 0.37 | 051 Switching B 719 | 4140 TOP VIEW b c | a10 | 250 - D 0.89 | 1.05 Mechanical Data Le] le] : 545 | Ot Case: SOT-23, Molded Plastic el G 178 | 2.05 Terminals: Solderable per MIL-STD-202, }__+>| H Method 208 poe Terminal Connections: See Diagram eos i 0.013 | 0.15 Marking: K1N, R1A, 1AM J , = [_K | 089 | 1.10 Weight: 0.008 grams (approx.) L 0.45 | 0.61 M 0.076 | 0.178 All Dimensions in mm Maximum Ratings @ Ta = 25 C unless otherwise specified Characteristic Symbol MMBT3904 Unit Collector-Base Voltage VcBo 60 Vv Collector-Emitter Voltage VcEO 40 Vv Emitter-Base Voltage VEBO 6.0 Vv Collector Current - Continuous (Note 1) Ic 200 mA Power Dissipation (Note 1) Pa 350 mw Thermal Resistance, Junction to Ambient (Note 1) R JA 357 K/W Operating and Storage and Temperature Range Tj, Tsta -55 to +150 Cc Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s, dutycycle 2%.Electrical Characteristics @ Ta= 25 C unless otherwise specified Characteristic [Symbol | Min | Max | Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage V(BR)}CBO 60 Vv Ic=10 A, lE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 Vv Ic = 1.0mMA, Ip = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 Vv le=10 A, Ic =0 Collector Cutoff Current IcEX 50 nA Voce = 30V, VeBorr) = 3.0V Base Cutoff Current IBL 50 nA Voce = 30V, VeBiorr) = 3.0V ON CHARACTERISTICS (Note 2) 40 lc = 100HA, Vce= 1.0V 70 lo = 1.0MA, VceE= 1.0V DC Current Gain Nre 100 300 I= 10mA, Vce= 1.0V 60 lco= 5OmA, VcE= 1.0V 30 lo = 100mA, VceE= 1.0V Collector-Emitter Saturation Voltage Vce(SaT) O35 V C= BOA B= om Base- Emitter Saturation Voltage Veeisat) | 9-85 Dee Vv IC = Boma ie = ee SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo 4.0 pF Vos = 5.0V, f= 1.0MHz, le = 0 Input Capacitance Cibo 8.0 pF Vep = 0.5V, f = 1.0MHz, Ic = 0 Input Impedance hie 1.0 10 k Voltage Feedback Ratio hre 0.5 8.0 x104 | Voe= 10V, Ic = 1.0mA, Small Signal Current Gain hie 100 400 f= 1.0kHz Output Admittance Noe 1.0 40 $s Current Gain-Bandwidth Product tr 300 MHz Vc ah = 10mA, Noise Figure NF 5.0 dB Ae oe Oe SWITCHING CHARACTERISTICS Delay Time ta 35 ns Voc = 3.0V, Ic = 10mA, Rise Time tr 35 ns Vee (otf) = - 0.5V, Ip1 = 1.0mA Storage Time ts 200 ns Voc = 3.0V, Ic = 10mA, Fall Time ty 50 ns __| !B1=!B2= 1.0mA Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s, dutycycle 2%.