T4-LDS-0100-2, Rev. 1 (120716) ©2012 Microsemi Corporation Page 1 of 8
JANS 2N5152U3 and JANS 2N5154U3
RADIATION HARDENE D
NPN POWER SI LICO N TRANSISTOR
Qualified per MIL-PRF-19500/544
Qualified Levels:
JANSM, JANSD,
JANSP, JANSL,
JANSR, JANSF
DESCRIPTION
These RHA level 2N5152U3 and 2N5154U3 silicon transistor devices are military Radiation
Hardness Assurance qualified up to a JANSF level for high-reliability applications. Microsemi
also offers numerous other products to meet higher and lower power voltage regulation
applications.
U3 (SMD-0.5)
Package
Also available in:
TO-5 Package
(long-leaded)
JANS_2N5152L &
JANS_2N5154L
TO-39 Package
(leaded)
JANS_2N5152 &
JANS_2N5154
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N5152 and 2N5154.
• JANS RHA qualifications are available per MIL-PRF-19500/544.
APPLICA TIONS / BENEFITS
• High frequency operation.
• Lightweight.
• High-speed power-switching applications.
• High-reliability applications.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +200
ºC
Thermal Resi stan ce Jun cti on-to-Ambient
RӨJA
175
ºC/W
Thermal Resi stan ce Jun cti on-to-Case
RӨJC
10
ºC/W
Reverse Pulse Energy (1)
15
mJ
Collector Current (dc)
IC
2
A
Collector to base voltage (static), emitter open
VCBO
100
V
Collector to emitter voltage (static) base open
VCEO
80
V
Emitter to base voltage (static) collector open
VEBO
5.5
V
Steady-State Power Dissipation @ TA = +25 ºC
PD
1
W
Steady-State Power Dissipation @ TC = +25 ºC
PD
10
W
Notes: 1. This rating is based on the capability of t he transistors t o operate safel y in the unclamped inducti ve load
energy test circuit.
T4-LDS-0100-2, Rev. 1 (120716) ©2012 Microsemi Corporation Page 2 of 8
JANS 2N5152U3 and JANS 2N5154U3
MECHANICAL and PACKAGING
• CASE: Ceramic and gold over nickel plated steel.
• TERMINALS: Gold over nickel plated tungsten/copper.
• MARKING: Part number, date code, A = anode.
• POLARITY: See schematic on last page.
• WEIGHT: 0.9 gra ms.
• See Package Dimensions on last page.
PART NOMENCLATURE
JANSM 2N5152 U3
Reliability Level
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
JANSF – 300K Rads (Si)
SMD Surface Mount Package
JEDEC type number
(See Electrical Characteristics
table)
SYMBOLS & DEFINITIONS
Symbol
Definition
Cobo
Common-base open-circuit output capacitance.
ICEO
Collector cutoff current, base open.
ICEX
Collector cut of f curr ent, circuit bet ween bas e and emitter .
IEBO
Emitter cutoff current, collector open.
hFE
Common-emitter static forward current transfer ratio.
VCEO
Collector-emitter voltage, base open.
VCBO
Collector-emitter voltage, emitter open.
VEBO
Emitter-base voltage, collector open.
T4-LDS-0100-2, Rev. 1 (120716) ©2012 Microsemi Corporation Page 3 of 8
JANS 2N5152U3 and JANS 2N5154U3
ELECTRICAL CHARACTERISTICS @ TA = +25 ºC unless otherwise noted.
OFF CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
V(BR)CEO 80
V
IC = 100 mA, IB = 0
Emitter-Base Cutoff Current
VEB = 4.0 V, IC = 0
VEB = 5.5 V, IC = 0
IEBO 1.0
1.0 µA
mA
Collector-Emitter Cutoff Current
ICES 1.0
1.0 µA
mA
V
CE
= 60 V, V
BE
= 0
VCE = 100 V, VBE = 0
Collector-Emitter Cutoff Current
ICEO 50 µA
VCE = 40 V, IB = 0
ON CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Forward-Current Transfer Ratio
IC = 50 mA, VCE = 5 V
IC = 2.5 A, VCE = 5 V
IC = 5A, VCE = 5V
2N5152U3
2N5154U3
2N5152U3
2N5154U3
2N5152U3
2N5154U3
hFE
20
50
30
70
20
40
--
--
90
200
--
--
Collector-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA
IC = 5.0 A, IB = 500 mA
VCE(sat) 0.75
1.5 V
Base-Emitter Voltage Non-Saturation
IC = 2.5 A, VCE = 5 V
VBE 1.45 V
Base-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA
IC = 5.0 A, IB = 500 mA
VBE(sat) 1.45
2.2 V
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emitter Small-Signal Short-
|hfe|
6
7
Circuit Forward Current Transfer
Ratio
IC = 500 mA, VCE = 5 V, f = 10 MHz
2N5152U3
2N5154U3
Small-signal short Circuit Forward-Current
hfe
20
50
Transfer Ratio
IC = 100 mA, VCE = 5 V, f = 1 KHz
2N5152U3
2N5154U3
Output Capac ita nc e
VCB = 10 V, IE = 0, f = 1.0 MHz
Cobo 250 pF
T4-LDS-0100-2, Rev. 1 (120716) ©2012 Microsemi Corporation Page 4 of 8
JANS 2N5152U3 and JANS 2N5154U3
ELECTRICAL CHARACTERISTICS @ TA = +25 °C unless otherwise noted. (continued)
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time
IC = 5 A, IB1 = 500 mA
ton
0.5 µs
Turn-Off Time
RL = 6Ω
toff
1.5 µs
Storage Time IB2 = -500 mA tS
1.4 µs
Fall Time VBE(OFF) = 3.7 V tf
0.5 µs
SAFE OPERATING AREA
(See SOA graph below and MIL-STD-750, method 3053)
DC Tests
TC = +25 °C, tP = 1.0 s, 1 Cycle
Test 1
VCE = 5.0 V, IC = 2.0 A
Test 2
VCE = 32 V, IC = 310 mA
Test 3
VCE = 80 V, IC = 12.5 mA
VCE – COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area
dc Operation
TC < 25 ºC
I
C
– COLLECTOR CURRE NT - A
T4-LDS-0100-2, Rev. 1 (120716) ©2012 Microsemi Corporation Page 5 of 8
JANS 2N5152U3 and JANS 2N5154U3
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
POST RADIATION ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Collector to Emitter Cutoff Current
ICEO 100 µA
VCE = 40 V
Emitter to Base Cutoff Current
IEBO 2.0 µA
VEB = 4 V
Breakdown Voltage, Collector to Emitter
V(BR)CEO 80 V
IC = 100 mA
Collector to Emitter Cutoff Current
ICES 2.0 µA
VCE = 60 V
Emitter to Base Cutoff Current
IEBO 2.0 mA
VEB = 5.5 V
Forward-Current Transfer Ratio (1)
[hFE]
I
C
= 50 mA, V
CE
= 5 V
IC = 2.5 A, VCE = 5 V
IC = 5 A pulsed, VCE = 5 V
2N5152U3
2N5154U3
2N5152U3
2N5154U3
2N5152U3
2N5154U3
[10]
[25]
[15]
[35]
[10]
[20]
90
200
Base to Emitter voltage (non-saturated)
VBE
1.45 V
VCE = 5 V, IC = 2.5 A, pu ls e d
Collector-Emitter Saturation Voltage
VCE(sat)
V
I
C
= 2.5 mA, I
B
= 250 mA, pulsed
IC = 500 mA, IB = 500 mA, pulsed
0.86
1.73
Base-Emitter Saturation Voltage
VBE(sat)
V
I
C
= 2.5 A, I
B
= 250 mA, pulsed
IC = 5 A, IB = 500 mA, pulsed
1.67
2.53
(1) See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre-
and post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value
can never exceed the pre-radi at ion mini mum hFE that it is based upon.
T4-LDS-0100-2, Rev. 1 (120716) ©2012 Microsemi Corporation Page 6 of 8
JANS 2N5152U3 and JANS 2N5154U3
GRAPHS
TC (°C) (Case)
FIGURE 1
Temperature-Power Derating Curve
TA (°C) (Ambient)
FIGURE 2
Temperature-Power Derating Curve
DC Operation Maximum Rating (W)
DC Operation Maximum Rating (W)
T4-LDS-0100-2, Rev. 1 (120716) ©2012 Microsemi Corporation Page 7 of 8
JANS 2N5152U3 and JANS 2N5154U3
GRAPHS (continued)
Time (sec)
FIGURE 3
Maximum Thermal Impedance (RӨJC)
Theta (oCW)
T4-LDS-0100-2, Rev. 1 (120716) ©2012 Microsemi Corporation Page 8 of 8
JANS 2N5152U3 and JANS 2N5154U3
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for ge ner al infor mat ion only.
3. In accordance with ASME Y14.5M, diameters are equivalent to Φx
symbology.
Schematic
Symbol
DIMENSIONS
INCH
MILLIMETERS
Min
Max
Min
Max
BL
.395
.405
10.03
10.29
BW
.291
.301
7.39
7.65
CH
.112
.124
2.84
3.15
LH
.010
.020
0.25
0.51
LL1
.220
.230
5.59
5.84
LL2
.115
.125
2.92
3.18
LS1
.150 BSC
3.81 BSC
LS2
.075 BSC
1.91 BSC
LW1
.281
.291
7.14
7.39
LW2
.090
.100
2.29
2.54
Q1
.030
0.76
Q2
.030
0.76
Term 1
Cathode
Term 2
Anode (See Schematic)
Term 3
Anode (See Schematic)
