2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Description Fast Switching Speed Small Surface Mount Package This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching ESD Protected Gate, 1.2kV HBM Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) performance, making it ideal for high efficiency power management Halogen and Antimony Free. "Green" Device (Note 3) applications. Qualified to AEC-Q101 Standards for High Reliability V(BR)DSS RDS(ON) max 60V 6 @ VGS = 5V ID max TA = +25C 200mA Applications Motor Control Power Management Functions Mechanical Data Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Drain SOT23 D Gate S G ESD PROTECTED TO 1.2kV Gate Protection Diode Top View Source Equivalent Circuit Top View Pin-Out Ordering Information (Note 4) Part Number 2N7002A-7 2N7002A-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 2N7002A Document number: DS31360 Rev. 12 - 2 1 of 6 www.diodes.com July 2013 (c) Diodes Incorporated 2N7002A NEW PRODUCT MN1 Chengdu A/T Site Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 Mar 3 MN1 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) YM YM Marking Information MN1 Shanghai A/T Site 2010 X Apr 4 2011 Y May 5 2012 Z Jun 6 Jul 7 2013 A Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 V ID 180 130 115 mA ID 220 160 140 mA IS 0.5 A IDM 800 mA Value 370 540 348 241 Units Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25C TA = +85C TA = +100C Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25C TA = +85C TA = +100C Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10s pulse, duty cycle = 1%) Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 6) Operating and Storage Temperature Range Notes: PD RJA RJC 91 TJ, TSTG -55 to +150 mW C/W C 5. Device mounted on FR-4 PCB, with minimum recommended pad layout 6. Device mounted on 1" x 1" FR-4 PCB with high coverage 2oz. Copper, single sided. 2N7002A Document number: DS31360 Rev. 12 - 2 2 of 6 www.diodes.com July 2013 (c) Diodes Incorporated 2N7002A Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Zero Gate Voltage Drain Current @ TC = +25C @ TC = +125C Gate-Body Leakage Min Typ Max Unit BVDSS 60 70 V VGS = 0V, ID = 10A A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V IDSS 1.0 500 IGSS 10 A VGS(th) 1.2 2.0 V RDS(ON) 3.5 3.0 6 5 gFS 80 mS Test Condition ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance @ TJ = +25C @ TJ = +125C Forward Transconductance VDS = VGS, ID = 250A VGS = 5.0V, ID = 0.115A VGS = 10V, ID = 0.115A VDS = 10V, ID = 0.115A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 23 pF Output Capacitance Coss 3.4 pF Reverse Transfer Capacitance Crss 1.4 pF Gate Resistance RG 260 400 VDS = 0V, VGS = 0V, f = 1.0MHz VDD = 30V, ID = 0.115A, RL = 150, VGEN = 10V, RGEN = 25 VDS = 25V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS (Note 8) Turn-On Delay Time tD(ON) 10 ns Turn-Off Delay Time tD(OFF) 33 ns Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 0.6 1 VDS = 5V Pulsed 0.5 0.4 0.3 0.2 ID, DRAIN CURRENT (A) NEW PRODUCT Drain-Source Breakdown Voltage Symbol 0.1 0.1 TA = 150C T A = 85C TA = 25C T A = -55C 0 2N7002A Document number: DS31360 Rev. 12 - 2 0.01 1 3 of 6 www.diodes.com 2 3 4 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 5 July 2013 (c) Diodes Incorporated 2N7002A 2.5 9 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 2.0 7 6 1.5 5 1.0 VGS = 5V 4 3 VGS = 10V 0.5 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 On-Resistance vs. Drain Current & Gate Voltage 100 1.9 1.8 ID = 250A CT, CAPACITANCE (pF) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.0 1.7 1.6 1.5 1.4 1.3 Ciss 10 Coss 1.2 1.1 1 1.0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature Crss 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance 40 1 IS, SOURCE CURRENT (A) NEW PRODUCT 8 0.1 TA = 150C T A = 125C 0.01 TA = 85C 0.001 TA = 25C TA = -55C 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage 2N7002A Document number: DS31360 Rev. 12 - 2 4 of 6 www.diodes.com July 2013 (c) Diodes Incorporated 2N7002A Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. NEW PRODUCT A B C H K M K1 D J F L G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X 2N7002A Document number: DS31360 Rev. 12 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com July 2013 (c) Diodes Incorporated 2N7002A IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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