CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright © Harris Corporation 1995 3-51
SEMICONDUCTOR
RFG70N06, RFP70N06,
RF1S70N06, RF1S70N06SM
70A, 60V, Avalanche Rated, N-Channel
Enhancement-Mode Power MOSFETs
Packages
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
A
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
A
A
M
DRAIN
(FLANGE)
GATE
SOURCE
Features
• 70A, 60V
•r
DS(on) = 0.014Ω
•
Temperature Compensated
PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• +175oC Operating Temperature
Description
The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM
are N-channel power MOSFETs manufactured using the MegaFET
process. This process, which uses feature sizes approaching
those of LSI circuits, gives optimum utilization of silicon, resulting
in outstanding performance. They were designed for use in appli-
cations such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49007.
Symbol
PACKAGE AVAILABILITY
PART NUMBER PACKAGE BRAND
RFG70N06 TO-247 RFG70N06
RFP70N06 TO-220AB RFP70N06
RF1S70N06 TO-262AA F1S70N06
RF1S70N06SM TO-263AB F1S70N06
NOTE: When ordering use the entire part number. Add the suffix, 9A, to
obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.
G
D
S
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
RFG70N06, RFP70N06
RF1S70N06, RF1S70N06SM UNITS
Drain Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 60 V
Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 60 V
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
70
Refer to Peak Current Curve A
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve
Power Dissipation
TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
1.0 W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ-55 to +175 oC
December 1995
File Number 3206.3
3-52
Specifications RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 60 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA2-4V
Zero Gate Voltage Drain Current IDSS VDS = 60V,
VGS = 0V TC = +25oC- -1µA
T
C
= +150oC- - 50µA
Gate-Source Leakage Current IGSS VGS = ±20V - - 100 nA
On Resistance rDS(ON) ID = 70A, VGS = 10V - - 0.014 Ω
Turn-On Time tON VDD = 30V, ID = 70A
RL = 0.43Ω, VGS = +10V
RGS = 2.5Ω
- - 125 ns
Turn-On Delay Time tD(ON) -12-ns
Rise Time tR-50-ns
Turn-Off Delay Time tD(OFF) -40-ns
Fall Time tF-15-ns
Turn-Off Time tOFF - - 125 ns
Total Gate Charge QG(TOT) VGS = 0V to 20V VDD = 48V,
ID = 70A,
RL = 0.68Ω
- 185 215 nC
Gate Charge at 10V QG(10) VGS = 0V to 10V - 100 115 nC
Threshold Gate Charge QG(TH) VGS = 0V to 2V - 5.5 6.5 nC
Input Capacitance CISS VDS = 25V, VGS = 0V
f = 1MHz - 3000 - pF
Output Capacitance COSS - 900 - pF
Reverse Transfer Capacitance CRSS - 300 - pF
Thermal Resistance Junction to Case RθJC - - 1.0 oC/W
Thermal Resistance Junction to Ambient RθJA --80
o
C/W
Source-Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage VSD ISD = 70A - - 1.5 V
Reverse Recovery Time tRR ISD = 70A, dISD/dt = 100A/µs - - 125 ns
3-53
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
Typical Performance Curves
FIGURE 1. SAFE OPERATING AREA CURVE FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
TC = +25oC
100
10
1
110 100
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
VDSS
MAX = 60V
100µs
1ms
10ms
100ms
DC
500 2
1
0.1
0.0110-5 10-4 10-3 10-2 10-1 100101
t, RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
0.01
0.02
0.05
0.1
0.2
0.5
THERMAL RESPONSE
ZθJC, NORMALIZED
PDM
t1t2
SINGLE PULSE
30
10
025 50 75 100 125 150
50
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
70
175
40
20
60
80
t, PULSE WIDTH (s)
5010-5 10-4 10-3 10-2 10-1 100101
TC = +25oC
100
IDM, PEAK CURRENT CAPABILITY (A)
1000 FOR TEMPERATURES
ABOVE +25oC DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
VGS = 10V
II
25 175 TC
–
150
-----------------------
=
0
80
0 1.0 2.0 3.0 5.0
120
160
ID, DRAIN CURRENT (A)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
PULSE DURATION = 250µs, TC = +25oC
VGS = 7V
VGS = 10V
200
4.0
VGS = 6V
VGS = 5V
VGS = 4.5V
VGS = 20V VGS = 8V
40
04.0 6.0 8.0 10.02.0
0
40
80
120
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
ID(ON), ON-STATE DRAIN CURRENT (A)
VGS, GATE-TO-SOURCE VOLTAGE (V)
160 -55oC+25oC
200
+175oC
3-54
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION
TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED DRAIN-SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE FIGURE 10. NORMALIZED POWER DISSIPATION vs TEMPERA-
TURE DERATING CURVE
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
Typical Performance Curves
(Continued)
ID = 70A
VGS = 10V,
PULSE DURATION = 250µs,
0.0
0.5
1.0
1.5
-80 -40 0 40 80 120 160
rDS(ON), NORMALIZED ON RESISTANCE
TJ, JUNCTION TEMPERATURE (oC) 200
2.0
2.5
-80 -40 0 40 80 120 160
0.0
0.5
1.0
1.5
2.0 VGS = VDS, ID = 250µA
VGS(TH), NORMALIZED GATE
THRESHOLD VOLTAGE
TJ, JUNCTION TEMPERATURE (oC) 200
ID = 250µA
2.0
1.5
1.0
0.5
0.0
-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
BVDSS, NORMALIZED DRAIN-TO-SOURCE
BREAKDOWN VOLTAGE
200 TC, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
0.0 0 25 50 75 100 175
0.2
0.4
0.6
0.8
1.0
1.2
125 150
VGS = 0V, FREQUENCY (f) = 1MHz
5000
1000
00 5 10 15 20 25
C, CAPACITANCE (pF)
4000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
CISS
COSS
CRSS
3000
2000
45
30
15
0
20IGREF()
I
GACT()
--------------------- t, TIME (µs) 80IGREF()
I
GACT()
---------------------
10
5.0
2.5
0
VDD = BVDSS VDD = BVDSS
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
RL = 0.86Ω
IG(REF) = 2.2mA
VGS = 10V
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
60
7.5
3-55
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING
REFER TO HARRIS APPLICATION NOTES AN9321 AND AN9322
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
(Continued)
0.01 0.1
100
300
10
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R = 0
If R ≠ 0
tAV = (L/R) ln [(IAS*R)/(1.3*RATED BVDSS-VDD) +1]
IAS, AVALANCHE CURRENT (A)
tAV, TIME IN AVALANCHE (ms)
STARTING TJ = +25oC
STARTING TJ = +150oC
110
tP
VGS
0.01Ω
L
IL
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
VDD
VDS
VGS
0V
RGS DUT
RL
tON
tD(ON)
tR
90%
10%
VDS 90%
10%
tF
tD(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
3-56
Temperature Compensated PSPICE Model for the
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
.SUBCKT RFG70N06 2 1 3 ; rev 3/20/92
CA 12 8 5.56e-9
CB 15 14 5.30e-9
CIN 6 8 2.63e-9
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 65.18
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 3.10e-9
LSOURCE 3 7 1.82e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 4.66e-3
RLDRAIN 2 5 10
RGATE 9 20 1.21
RLGATE 1 9 31
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 3.92e-3
RLSOURCE 3 7 18.2
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.605
.MODEL DBDMOD D (IS = 7.91e-12 RS = 3.87e-3 TRS1 = 2.71e-3 TRS2 = 2.50e-7 CJO = 4.84e-9 TT = 4.51e-8)
.MODEL DBKMOD D (RS = 3.9e-2 TRS1 =1.05e-4 TRS2 = 3.11e-5)
.MODEL DPLCAPMOD D (CJO = 4.8e-9 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 3.46 KP = 47 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 8.46e-4 TC2 = -8.48e-7)
.MODEL RDSMOD RES (TC1 = 2.23e-3 TC2 = 6.56e-6)
.MODEL RVTOMOD RES (TC1 = -3.29e-3 TC2 = 3.49e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -8.35 VOFF= -6.35)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.35 VOFF= -8.35)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.0 VOFF= 3.0)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.0 VOFF= -2.0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options; written by William J. Hepp and C. Frank Wheatley.
1
GATE
LGATE RGATE
EVTO
+
12 13
814
13
13
15
S1A
S1B
S2A
S2B
CA CB
EGS EDS
RIN CIN
MOS1
MOS2
DBREAK
EBREAK
DBODY
LDRAIN DRAIN
RSOURCE
LSOURCESOURCE
RBREAK
RVTO
VBAT
IT
VTO
ESG
DPLCAP
6
10 5
16
21
11
17
18
8
14
73
17 18
19
2
++
+
+
+
+
20
RDRAIN
ESCL
RSCL1RSCL2
51
50
+
9
RLGATE
RLDRAIN
RLSOURCE
5
51
18
8
6
8
-
-
-
-
5
8
6
8
--
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
